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    BQ4011YMA Price and Stock

    Texas Instruments BQ4011YMA-70

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    Rochester Electronics BQ4011YMA-70 1,262 1
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    Texas Instruments BQ4011YMA-150

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    Rochester Electronics BQ4011YMA-150 3,003 1
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    Texas Instruments BQ4011YMA-200

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    Rochester Electronics BQ4011YMA-200 547 1
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    Texas Instruments BQ4011YMA-100

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    Bristol Electronics BQ4011YMA-100 40
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    Texas Instruments BQ4011YMA-70N

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    BQ4011YMA Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BQ4011YMA-100 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    BQ4011YMA-100 Texas Instruments 32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4011YMA-100 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100 Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011YMA-100N Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 100 ns, DMA28, Static RAM Original PDF
    bq4011YMA-100N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4011YMA-100N Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100N Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100N Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011YMA-120 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-120N Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-150 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011YMA-150 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-150 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011YMA-150 Texas Instruments 32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    BQ4011YMA-150 Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011YMA-150N Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011YMA-150N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4011YMA-150N Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF

    BQ4011YMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BQ4011YMA-100 IL08D 24K 32768 x 8 -BIT NONVOLATILE SRAM —TOP VIEW— 10 A14 1 28 VDD A12 2 27 WE 9 8 7 6 A7 3 26 A13 5 4 A6 4 25 A8 3 25 A5 5 24 A9 24 21 A4 6 23 A11 23 2 A3 7 22 OE 26 1 A2 8 21 A10 A1 9 20 CE A0 I/O 0 A1 I/O 1 A2 I/O 2 A3 I/O 3 A4 I/O 4


    Original     		PDF BQ4011YMA-100 IL08D

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    benchmarq BQ4011YMA-70

    Abstract: bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100

    benchmarq BQ4011YMA-70

    Abstract: Benchmarq BQ4011MA-150
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit benchmarq BQ4011YMA-70 Benchmarq BQ4011MA-150

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    bq4011

    Abstract: bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


    Original     		PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    1993e

    Abstract: A14C bq4011 bq4011-100 bq4011-150
    Text: bq4011/foq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM General Description Features >- D ata retention in the absence of power ► Automatic write-protection during power-up/power-down cycles >• Industry-standard 28-pin 32K x 8 pinout >- Conventional SRAM operation;


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit condit11YMA-150N. bq4011-70 bq4011Y-70 bq4011YMA-70N 1993e A14C bq4011-100 bq4011-150

    Z7777

    Abstract: No abstract text available
    Text: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 28-pin 10-year bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011YMA-150N bq4011Y-70 bq4011YMA-70N Z7777

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011 Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011 32Kx8 bq4011 144-bit lit1YMA-150N. bq4011-70 bq4011Y-70 bq4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011-70 bq4011Y-70 bq4011YMA-70N bq4011

    dallas ds80c320 high speed micro guide

    Abstract: DS1640
    Text: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .


    OCR Scan     		PDF