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    BQ4011MA Price and Stock

    Texas Instruments BQ4011MA-100

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011MA-100 Tube
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    Texas Instruments BQ4011MA-200

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011MA-200 Tube 42
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    • 100 $12.99024
    • 1000 $12.99024
    • 10000 $12.99024
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    Rochester Electronics BQ4011MA-200 594 1
    • 1 $5.46
    • 10 $5.46
    • 100 $5.13
    • 1000 $4.64
    • 10000 $4.64
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    Texas Instruments BQ4011MA-150

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011MA-150 Tube
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    Rochester Electronics BQ4011MA-150 98 1
    • 1 $19.96
    • 10 $19.96
    • 100 $18.77
    • 1000 $16.97
    • 10000 $16.97
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    Benchmarq Microelectronics Inc BQ4011MA-200

    Non-Volatile RAM, 32K x 8, 28 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BQ4011MA-200 164
    • 1 $10.44
    • 10 $10.44
    • 100 $4.524
    • 1000 $4.176
    • 10000 $4.176
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    Component Electronics, Inc BQ4011MA-200 10
    • 1 $15.38
    • 10 $15.38
    • 100 $11.54
    • 1000 $10
    • 10000 $10
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    BQ4011MA Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BQ4011MA-100 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011MA-100 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    bq4011MA-100 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4011MA-100 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011MA-100 Texas Instruments 32Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    BQ4011MA-100 Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011MA-100N Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011MA-120 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011MA-120N Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011MA-150 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011MA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4011MA-150 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011MA-150 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011MA-150 Texas Instruments 32Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    BQ4011MA-150 Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011MA-150N Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA28, MODULE, DIP-28, Static RAM Original PDF
    BQ4011MA-150N Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011MA-200 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011MA-200 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    bq4011MA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF

    BQ4011MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    benchmarq BQ4011YMA-70

    Abstract: bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100

    benchmarq BQ4011YMA-70

    Abstract: Benchmarq BQ4011MA-150
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit benchmarq BQ4011YMA-70 Benchmarq BQ4011MA-150

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    bq4011MA-150

    Abstract: bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 bq4011
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


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    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 bq4011

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


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    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original
    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    benchmarq BQ4011YMA-70

    Abstract: BQ4011MA-150 bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-150 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    Z7777

    Abstract: No abstract text available
    Text: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan
    PDF 28-pin 10-year bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011YMA-150N bq4011Y-70 bq4011YMA-70N Z7777

    nv SRAM cross reference

    Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
    Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written


    OCR Scan
    PDF DS1258AB-XXX DS1258Y-XXX DS1220AB-XXX 1220AB-XXX-IND DS1220AD-XXX DS1220AD-XXX-IND DS1225AB-XXX DS1225AD-XXX 1225AD-XXX-IND nv SRAM cross reference Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM