Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
9990electronic
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
9990d
11-Mar-11
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PDF
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BPW96
Abstract: BPW96B BPW96C
Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
11-Mar-11
BPW96B
BPW96C
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PDF
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BPW96
Abstract: BPW96C Infrared emitter 450 nm 8239 BPW96B
Text: BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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Original
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BPW96B,
BPW96C
2002/95/EC
2002/96/EC
BPW96
18-Jul-08
BPW96C
Infrared emitter 450 nm
8239
BPW96B
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
16-Nov-99
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PDF
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TSSP4038
Abstract: No abstract text available
Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2
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Original
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VMN-MS6520-1311
TSSP4038
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
BPW96B
BPW96C
08-Apr-05
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PDF
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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Original
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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PDF
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BPW96
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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Original
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BPW96
BPW96
D-74025
29-Mar-04
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PDF
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BPW96
Abstract: BPW96A BPW96B BPW96C
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
08-Apr-05
BPW96A
BPW96B
BPW96C
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PDF
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8239
Abstract: Vishay Telefunken Phototransistor BPW96 BPW96A BPW96B BPW96C
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
16-Nov-99
8239
Vishay Telefunken Phototransistor
BPW96A
BPW96B
BPW96C
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PDF
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tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily
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emit4-9337-2920
VSA-SG0041-0512
tept5600 response time
Application NOTES TSAL4400
BPV11F
Photo interrupter application notes
SMD Transistor 1020
"Photo Interrupter" dual transistor
CNY70
cny70 datasheet
TEMT6000
TCND5000
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PDF
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bpw 104
Abstract: BPW96 BPW96A BPW96B BPW96C
Text: BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
D-74025
bpw 104
BPW96A
BPW96B
BPW96C
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PDF
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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Original
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BPW96
BPW96
D-74025
02-Jun-04
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
16-Nov-99
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
2002/95/EC
2002/96/EC
BPW96B
BPW96C
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ ø 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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Original
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BPW96
BPW96
D-74025
20-May-99
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PDF
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L-53P3BT
Abstract: l53p3bt IRE5 L53P3C BPW40 IRE-5 53p3bt L-53P3C BPW96C B100
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 $0T0TpaH3MCT0pbi b nnacTMKOBOM Kopnyce □ 5 MM Kofl: flnH H a BonHN y ro n B T O H K e M aK C . o63opa UcEO TeMHOBOM TOK : TnnrmH3bi H yB C TB H T. X max IRE5 L-53P3C L-53P3BT BPW40 BPW96C 940
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OCR Scan
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L-53P3C
L-53P3BT
BPW40
BPW96C
o63opa
HA/10
L-53P3BT
l53p3bt
IRE5
L53P3C
BPW40
IRE-5
53p3bt
L-53P3C
BPW96C
B100
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PDF
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BPW85C
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package
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OCR Scan
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BPW16N
BPW17N
BPW85A
BPW85B
BPW85C
BPW96A
BPW96B
BPW96C
BPV11
TEMT2100
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PDF
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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OCR Scan
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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PDF
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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OCR Scan
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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