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    NEL0802 Search Results

    NEL0802 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NEL080220-24 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NEL080220-28 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NEL080220-28 NEC Class A, 860 MHz 24 Volt Power Transistor Scan PDF

    NEL0802 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3140

    Abstract: L0801
    Text: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz


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    PDF L0801: NEL0802: NEL0805: NEL080120-28 NEL080220-28 NEL080525-28 EL0800 d-179 2SC3140 L0801

    of all 74 ic series

    Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
    Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S


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    PDF Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925

    transistor 86 y 87

    Abstract: 2SC3139 2SC3141
    Text: NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION • HIGH LINEAR POWER N EC 's N E L 0 8 0 0 series of N P N epitaxial U H F pow er transis­ tors is designed for linear operation in the 5 0 0 to 1000 M Hz


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    PDF NEL080120-28 NEL080220-28 NEL080525-28 2SC3139 TYP150 NEL080525-28 transistor 86 y 87 2SC3141

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NEL1320

    Abstract: No abstract text available
    Text: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C


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    PDF NEM090701-07 NEM090301 NE090101- NE081091-12 NE081090-12 NE080491-12 NE080490-12 NE080190-12 NE080191-12 NEM0M081B-28 NEL1320