Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 17E D blllS41 MICRON • Kcmaii Me MT1259 883C MILITARY DRAM 256K X 1 DRAM T < K ,-25.- iS DRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-85152 • JAN M38510/246 16L/300 DIP (D-2) FEATURES *A8C 1-W 16
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blllS41
MT1259
M38510/246
16L/300
150mW
00Q173S-
T-46-23
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4 MEG X 64 DRAM SODIMM M IC R O N I TF.CHNOLOOY, INC. SMALL-OUTLINE DRAM MODULE MT4LDT464H X S FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-stand ard pinout in a 144-pin, sm all-outline, dual in-line m em ory m odule (DIMM) • 32MB (4 M eg x 64)
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MT4LDT464H
144-pin,
096-cycle
256ms
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON* I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
expansi00)
MT58L512L18F
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Untitled
Abstract: No abstract text available
Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses
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MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
blllS41
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Untitled
Abstract: No abstract text available
Text: MICRON SEM ICO NDUCTOR INC b?E D B blllS4T 0001321 ES3 M M R N ADVANCE MT5C1M4B2 1 MEG X 4 SRAM l ^ i c n o N 1 MEGx 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12,15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins for improved
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32-Pin
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QQ1042A
Abstract: No abstract text available
Text: ADVANCE MT5LC256K16D4 256K X 16 SRAM M IC R O N SRAM 256Kx 16 SRAM 3.3V OPERATION WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 12,15,20, 25 and 35ns • Multiple center power and ground pins for improved noise immunity • Single +3.3V ±0.3V power supply
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MT5LC256K16D4
256Kx
54-Pin
DG10434
QQ1042A
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Untitled
Abstract: No abstract text available
Text: M ICRON SEM ICONDUCTOR INC b3E D M IC R O N WÊ b lllS M T 1 MEG X 0 G D 7 cì b G b O 1» « P I R N MT3D19 9 DRAM MODULE 1 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line
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MT3D19
MT3D19)
MT3D19
30-pin
625mW
024-cycle
CYCLE20
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MT16D832-6/7
Abstract: No abstract text available
Text: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)
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MT8D432
MT16D832
72-pin,
448mW
048-cycle
MT16D832-6/7
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 256K32D4 S MT41 LC256K32D4(S) 256K x 32 SGRAM [U II^ P n M I TECHNOLOGY, INC. 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM PULSED RAS#, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES PIN ASSIGNMENT (TOP VIEW) • Fully synchronous; all signals registered on positive
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256K32D4
LC256K32D4
024-cycle
0015L77
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Untitled
Abstract: No abstract text available
Text: ADVANCE FLASH MEMORY 4 MEG martV oltage , BOOT BLOCK, EXTENDED TEMPERATURE S FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40° to +85° C • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/ 4K-word parameter blocks
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16KB/8K-word
100ns
110ns,
150ns
MT28SF400
56-PIN
111S4T
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC4M16K2/F5 4 MEG X 16 DRAM |U|ICRON X 16 DRAM 3.3V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard xl6 pinout, timing, functions and packages • 13 row-addresses, 9 column-addresses (K2) or
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MT4LC4M16K2/F5
096-cycle
50-Pin
Q013411
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 1 — - 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM MT41LC256K32D4 SGRAM FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle
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MT41LC256K32D4
024-cycle
100-Pin
blll541
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4LC1M16C3
Abstract: No abstract text available
Text: MT4LC1M16C3 L 1 MEG X 16 DRAM MICRON DRAM 1 M E G x 1 6 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +3.3V +0.3V power supply
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MT4LC1M16C3
024-cycle
250mW
12/9S
4LC1M16C3
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE D • b lllS M T TECHNOLOGY INC DRAM 4 MEG X4 DRAM DRAM 5.0V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply : +5V ±10%
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
QGG4355
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Untitled
Abstract: No abstract text available
Text: MICRON SEMI CO NDU CTOR INC b7E D blllSMT GGDTfll? 3B7 iriRN PRELIMINARY MT4LC16256/7 S 256K X 16 WIDE DRAM MICRON m SEMiCONSUCTÛft IMC. WIDE DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions
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MT4LC16256/7
512-cycle
16256/7S
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MT43C4257ADJ-7
Abstract: No abstract text available
Text: b l l l S M T OOIOOL j? 3Tfi • URN IU |C Z R O N I MT43C4257A/8 A 256K x 4 TRIPLE-PORT DRAM SEW iCOhD'JCTOa INC. TRIPLE-PORT DRAM 256K x 4 DRAM WITH DUAL 51 2 x 4 SAMS FEATURES • • • • • • • • Three asynchronous, independent, data-access ports
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MT43C4257A/8
500mW
512-cycle
MT43C4257A/8A
MT43C42S7A/
MT43C4257ADJ-7
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Untitled
Abstract: No abstract text available
Text: ADVANCE M m p n M ’ • 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM Q A /II> \ C V K I P P I I D C T O lV ID O T I M v / D U i l O I O D A IV i l H M IV I MT58L512L18D, MT58L256L32D, MT58L256L36D; MT58L512V18D, MT58L256V32D, MT58L256V36D
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D;
MT58L512V18D,
MT58L256V32D,
MT58L256V36D
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Untitled
Abstract: No abstract text available
Text: MT4LC1M16H5 1 MEG x 16 BURST EDO DRAM DRAM 1 MEG x 16 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single +3.3V ±5%power supply • All inputs and outputs are LVTTL-compatible with 5V
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MT4LC1M16H5
024-cycle
42-Pin
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Untitled
Abstract: No abstract text available
Text: MICRO N S E M I C O N D U C T O R INC b?E D • t.lllSM'l D D 0 R 3 7 ü RH2 ■ MRN PRELIMINARY MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM MICRON I S SEMICONDUCTOR. INC R A M 1 2 8 K x 8 S R A M FEATURES • H igh speed: 1 2 ,1 5 , 20 and 25ns • M ultiple center power and ground pins for greater
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MT5C128K8A1
32-Pin
MT5C128K6A1
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Untitled
Abstract: No abstract text available
Text: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •
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000177b
MT42C4064
24L/400
VcqC12
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N B 128K IttMNOLÜGV INC X MT58LC128K32/36D8 32/36 S Y N C B U R S T SR A M 128KX 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns
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MT58LC128K32/36D8
128KX
MT58LC128K32/36D6
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C1M16C3 1 MEG X 16 DRAM MICRON I TECHNOLOGY. inc. 1 6 D R A M NEW 1 M E G x D R A M 5V, FAST PAGE MODE • JEDEC- and industry-standard x l6 timing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply
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MT4C1M16C3
024-cycle
350mW
42-Pin
blllS41
DQ1S313
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MT4C1024DJ
Abstract: MT302569
Text: MICRON I TECHNOLOGY. INC. SSE I> niCRON TECHNOLOGY INC • MT3D2569 256K x 9 DRAM M bill 5 4=1 G0DH7G7 T5Q ■ URN 256K x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES • Industry standard pinout in a 30-pin single-in-line
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
125US
Q00471L
MT4C1024DJ
MT302569
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