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    BIPOLAR TRANSISTOR 160V 3A Search Results

    BIPOLAR TRANSISTOR 160V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR 160V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor ZTX108

    Abstract: replacement ztx108 Lamps FLASH TUBE xenon list of super E line NPN Transistor Mosfet replacement for 2N3055 PNP Relay Driver automotive relay driver circuit using darlington xenon linear flash lamps 2N3055 TO220 2N3055 power circuit
    Text: Application Note 4 Issue 2 January 1996 Centre Collector E-Line Applications An Overview of Package Capability and Applications Advantages David Bradbury Introduction Product Range This Application Note describes the product range, important package characteristics including construction


    Original     		PDF ZVN2120C FXTA42 transistor ZTX108 replacement ztx108 Lamps FLASH TUBE xenon list of super E line NPN Transistor Mosfet replacement for 2N3055 PNP Relay Driver automotive relay driver circuit using darlington xenon linear flash lamps 2N3055 TO220 2N3055 power circuit

    g1 smd transistor

    Abstract: SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc
    Text: ZXBM1015EV1 ZXBM1015EV1 USER GUIDE DESCRIPTION The ZXBM1015EV1 is a demonstration board for evaluating the ZXBM1015 Single Phase Brushless DC Motor Controller. PWM input control, thermistor input control or voltage input control can be selected simply by inserting a jumper.


    Original     		PDF ZXBM1015EV1 ZXBM1015EV1 ZXBM1015 g1 smd transistor SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    2n3054 pnp

    Abstract: TO77 package 2N3411
    Text: Part number search for devices beginning "2N3054" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3054


    Original     		PDF html/2N3054 2N3054" 2N3054 2N3054A 2N3054-JQR-B 2N3250" 2N3250 40MHz 2n3054 pnp TO77 package 2N3411

    40841

    Abstract: 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris
    Text: S E M I C O N D U C T O R FSL9230D, FSL9230R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 3A, -200V, rDS ON = 1.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSL9230D, FSL9230R -200V, 36MeV/mg/cm2 O-205AF 1-800-4-HARRIS 40841 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1

    integrated circuits equivalents list

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET

    bipolar transistor 160V 3A

    Abstract: 2N6686
    Text: 2N6686 NPN BIPOLAR MULTI-EPITAXIAL POWER TRANSISTOR 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)


    Original     		PDF 2N6686 T0-204AA) bipolar transistor 160V 3A 2N6686

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842

    transistor r1009

    Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
    Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02


    Original     		PDF CTM805SVSERV 107-800455-4G 127-476042-0D 130-600101-0G 190-R63300-02 774-R63301-00 774-R63302-00 774-R63303-00 849-R63301-00 892-R63301-06 transistor r1009 ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 S E M I C O N D U C T O R Formerly Available As FSL230R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 1-800-4-HARRIS

    relay 12v 100A

    Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7396 FSL230R4 relay 12v 100A 1E14 2E12 FSL230R4 JANSR2N7396

    1E14

    Abstract: 2E12 FSL923A0R4 JANSR2N7439
    Text: JANSR2N7439 Data Sheet Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7439 FSL923A0R4, 1E14 2E12 FSL923A0R4 JANSR2N7439

    irf610 mosfet

    Abstract: IRF610 power MOSFET IRF610 4V801
    Text: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF610 IRF610 O-220AB TB334 irf610 mosfet power MOSFET IRF610 4V801

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    vogt

    Abstract: fi324 Resistor R1206 vogt -sumida 200v 3A schottky 380v bcb56b C0805 100nf capacitor kmg KMG 200V
    Text: Ref. Q.ty CONI 1 Variant Clamp, WECO, 2 pole, horizontal, 1.5mm2, 380V, 15A CON2 1 Clamp, WECO, 3 pole, horizontal, 1.5mm2, 380V, 15A C1 1 22pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20% C2 1 10pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20%


    OCR Scan     		PDF

    40842

    Abstract: No abstract text available
    Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; 40842

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL230R4 JANSR2N7396 MIL-STD-750, MIL-S-19500, 500ms;

    diode PJ 65 MG

    Abstract: 5a 12v regula
    Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF 460i2 FSL230D, FSL230R MIL-STD-750, MIL-S-19500, 500ms; diode PJ 65 MG 5a 12v regula

    Untitled

    Abstract: No abstract text available
    Text: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSS9230D, FSS9230R -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;

    2sb1569a

    Abstract: No abstract text available
    Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    Untitled

    Abstract: No abstract text available
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm)

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56