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    BH RE TRANSISTOR Search Results

    BH RE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BH RE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTD2955

    Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD2955V MTD2955 CBVK741B019 F63TNR FDD6680 MTD2955V

    Untitled

    Abstract: No abstract text available
    Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF IRFR9024 IRFR9024*

    Untitled

    Abstract: No abstract text available
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V MTD3055V*

    Untitled

    Abstract: No abstract text available
    Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD2955V MTD2955V*

    Mosfet FDD

    Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
    Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD3055V Mosfet FDD CBVK741B019 F63TNR FDD6680 MTD3055V

    DSAS 13-0

    Abstract: d92 02 a9hv
    Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF IRFR9024 DSAS 13-0 d92 02 a9hv

    a9hv

    Abstract: No abstract text available
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF MTD2955V a9hv

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs Post amplifier applicable with 1-bit D/A converter BH3562F The BH 3562F is a post am plifier applicable with 1-bit D/A converter for com pact d isc players. # A pplications Portable CD players, etc. •F e a tu re s 1 Two channel analog filter for 1 bit digital-audio converters.


    OCR Scan     		PDF BH3562F 3562F

    T1P102

    Abstract: No abstract text available
    Text: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107


    OCR Scan     		PDF TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 2N6045 2N6388 TIP102' T1P102

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs Post amplifier applicable with 1-bit | D/A converter BH3561AF The BH 3561A F is a post am plifier applicable with 1-bit D /A converter for com pact disc players. •A p p lic a tio n s C D players, etc. •F e a tu re s 1 2-channel analog filter IC for 1-bit D /A converters.


    OCR Scan     		PDF BH3561AF BH3561AF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    multi-emitter transistor

    Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
    Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.


    OCR Scan     		PDF 711D82b BLX96 multi-emitter transistor SOT-48 BLX96 IEC134 BLX-96 IEC-134

    ferroxcube wideband hf choke

    Abstract: BLV99 002im3
    Text: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.


    OCR Scan     		PDF BLV99 OT172A1) OT172A1. 960MHz; ferroxcube wideband hf choke BLV99 002im3

    Untitled

    Abstract: No abstract text available
    Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF BLX97 class-78

    CA3086

    Abstract: CA3016
    Text: i H A R IR IS U V CA3086 S E M I C O N D U C T O R General Purpose N-P-N Transistor Array March 1993 Applications Description • Three Isolated Transistors and One Differentially Con­ nected Transistor Pair For Low-Power Applications from DC to 120 MHz


    OCR Scan     		PDF CA3086 CA3086 120MHz. CA3016

    BH RE transistor

    Abstract: No abstract text available
    Text: PNP Silicon RF Transistor BF 569 Suitable fo r o scillators, m ixers and self-oscillating m ixer stages in UHF TV tu n ers Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 569 LH Q62702-F548 Q 62702-F869 SOT 23


    OCR Scan     		PDF Q62702-F548 62702-F869 BH RE transistor

    BLX67

    Abstract: mrtil transistor 3568
    Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,


    OCR Scan     		PDF G014DDM BLX67 T-33-Ã BLX67 mrtil transistor 3568

    MCN transistor

    Abstract: BSS44
    Text: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications


    OCR Scan     		PDF BSS44 BSS44 MCN transistor

    PJ 976

    Abstract: 2SD2157 2SD215 2SD2157A
    Text: Power Transistors 2SD2157, 2SD2157A 2SD2157, 2SD2157A Package Dim ensions Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifie r • Features • High D C c u r re n t gain htF • H igh sp e e d sw itch in g • “Full P a c k ” p ack ag e for sim plified m o unting on a h e a t sink w ith


    OCR Scan     		PDF 2SD2157, 2SD2157A 2SD2157 2SD2157 10Vx0 100x2. PJ 976 2SD215 2SD2157A

    CA3045

    Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
    Text: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general


    OCR Scan     		PDF CA3045, CA3046 CA3046 CA3045 CA3046 equivalent ca301b Harris CA3046 CA3046M

    TRANSISTOR BH RW

    Abstract: No abstract text available
    Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape


    OCR Scan     		PDF 62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW

    BFQ43

    Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
    Text: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­


    OCR Scan     		PDF BFQ43 BFQ43S BFQ43S BLW31 lyp 809 TRANSISTOR A1t

    2SC1226

    Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
    Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A


    OCR Scan     		PDF 2SC1226, 2SC1226A 2SA699, 2SA699A 2SC1226 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H

    2SD2157

    Abstract: 2SD2157A
    Text: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with


    OCR Scan     		PDF 2SD2157, 2SD2157A 2SD2157 -25-C i32052 2SD2157A