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onsemi MTD2955VT4 MOSFET P-CH 60V 12A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTD2955VT4	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.29997	Buy Now
Bristol Electronics	MTD2955VT4		964			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MTD2955ET4 PFET DPAK 60V 0.20R TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTD2955ET4					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MTD2955ET4		1,420			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MTD2955ET4		33			1 $1.26 10 $1.05 100 $0.756 1000 $0.756 10000 $0.756	Buy Now
	MTD2955ET4		1,076			1 $1.4835 10 $1.4835 100 $0.7418 1000 $0.5934 10000 $0.5934	Buy Now
	MTD2955ET4		280			1 $1.82 10 $1.82 100 $0.546 1000 $0.546 10000 $0.546	Buy Now
Motorola Semiconductor Products MTD2955
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTD2955		328			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTD2955E-T4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTD2955E-T4		308			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTD2955T4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTD2955T4		3,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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MTD2955 Datasheets (30)

Part	Manufacturer	Description	Type	PDF
MTD2955	Motorola	Switchmode Datasheet	Scan	PDF
MTD2955	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
MTD2955	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTD2955	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTD2955	Unknown	FET Data Book	Scan	PDF
MTD2955-1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTD2955-1	Unknown	FET Data Book	Scan	PDF
MTD2955E	On Semiconductor	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount	Original	PDF
MTD2955E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTD2955E	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTD2955E-1	Motorola	TMOS power FET. 60 V, 12 A, Rds(on) 0.3 Ohm.	Scan	PDF
MTD2955E-1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTD2955E/D	On Semiconductor	TMOS POWER FET 12 AMPERES 60 VOLTS	Original	PDF
MTD2955E-D	On Semiconductor	TMOS E-FET Power Field Effect Transistor DPAK for	Original	PDF

MTD2955ET4	On Semiconductor	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount	Original	PDF
MTD2955ET4	On Semiconductor	TMOS E-FET.E Power Field Effect Transistor DPAK for Surface Mount	Original	PDF
MTD2955V	Fairchild Semiconductor	P-Channel Enhancement Mode Field Effect Transistor	Original	PDF
MTD2955V	Motorola	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM	Original	PDF
MTD2955V	On Semiconductor	Power MOSFET 12 A, 60 V	Original	PDF
MTD2955V	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

MTD2955 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN569 Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D Text: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET	Original	PDF	MTD2955E/D MTD2955E MTD2955e/D* AN569 MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
MTD2955V Abstract: transistor WT9 a9hv Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.	Original	PDF	MTD2955V* MTD2955V transistor WT9 a9hv
T2-955V Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge	Original	PDF	MTD2955V MTD2955V/D T2-955V 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
a9hv Abstract: No abstract text available Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.	Original	PDF	MTD2955V a9hv
t2955e Abstract: T2-955e t2955 AB Electronic Text: MTD2955E Preferred Device TMOS E−FETt Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient	Original	PDF	MTD2955E MTD2955E/D t2955e T2-955e t2955 AB Electronic
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate	Original	PDF	MTD2955V/D MTD2955V
AN569 Abstract: MTD2955 MTD2955E MTD2955ET4 SMD310 power MOSFET SC-59 80 Volts MARKING CODE diode sod123 t4 Text: MTD2955E Preferred Device TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient	Original	PDF	MTD2955E MTD2955E/D AN569 MTD2955 MTD2955E MTD2955ET4 SMD310 power MOSFET SC-59 80 Volts MARKING CODE diode sod123 t4
t2955e Abstract: T2-955e Text: MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.	Original	PDF	MTD2955E MTD2955E/D t2955e T2-955e
MTD2955 Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.	Original	PDF	MTD2955V MTD2955 CBVK741B019 F63TNR FDD6680 MTD2955V
TMOS E-FET Abstract: AN569 MTD2955V SMD310 Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTD2955V Designer's TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P–Channel Enhancement–Mode Silicon Gate	Original	PDF	MTD2955V/D MTD2955V TMOS E-FET AN569 MTD2955V SMD310
Untitled Abstract: No abstract text available Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge	Original	PDF	MTD2955V MTD2955V/D
T2955V Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge	Original	PDF	MTD2955V r14525 MTD2955V/D T2955V T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
T2955V Abstract: T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG Text: MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge	Original	PDF	MTD2955V MTD2955V/D T2955V T2-955V 2955V MTD2955VT4G MTD2955V MTD2955VT4 dpak-3 369D AN569 MTD2955VG
Untitled Abstract: No abstract text available Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.	Original	PDF	MTD2955V MTD2955V*

T2-955V Abstract: T2955V 2955V MTD2955VT4 MTD2955V-D Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge	Original	PDF	MTD2955V MTD2955V/D T2-955V T2955V 2955V MTD2955VT4 MTD2955V-D
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
2955V Abstract: TD2955V Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie	OCR Scan	PDF	MTD2955V/D 2955V TD2955V
25CC Abstract: 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1 Text: MOTOROLA SC XSTRS/R F b ftE b3b?254 D DCnfl53Q ôST • MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTD2955E Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r M o to ro la Preferred Device P-Channel Enhancem ent-M ode Silico n Gate D P A K for Surface M o u n t or	OCR Scan	PDF	G01flS30 25CC 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1
MTD2955V Abstract: No abstract text available Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate	OCR Scan	PDF	MTD2955V/D MTD2955V
MTD2955 Abstract: 2955 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2955 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r P-Channel Enhancem ent-M ode S ilicon G ate TM O S D PA K fo r Surface M o u n t or Insertion M ount TMOS POWER FET 12 AMPERES rDS{on = 0.3 OHM 60 VOLTS	OCR Scan	PDF	MTD2955 MTD2955 2955 mosfet
2955V Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MT02955V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate	OCR Scan	PDF	MT02955V/D MTD2955V 69A-13

MTD2955 Search Results

MTD2955 Price and Stock

onsemi MTD2955VT4

onsemi MTD2955ET4

Motorola Semiconductor Products MTD2955

Motorola Semiconductor Products MTD2955E-T4

Motorola Semiconductor Products MTD2955T4

MTD2955 Datasheets (30)

MTD2955 Datasheets Context Search

AN569

MTD2955V

T2-955V

a9hv

t2955e

Untitled

AN569

t2955e

MTD2955

TMOS E-FET

Untitled

T2955V

T2955V

Untitled

T2-955V

MC68B21CP

mosfet cross reference

fqp60n06

2955V

25CC

MTD2955V

MTD2955

2955V

Untitled