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    JIGO JG-100X2.5UV

    4 Inch, 18 Lbs Nylon Cable Ties
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    DigiKey JG-100X2.5UV Bulk 996,000 100
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    Panduit Corp S100X225VA1Y

    LABEL SELF LAMINATNG 1X2.25" WHT
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    DigiKey S100X225VA1Y Bulk 73,500 1,500
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    Avnet Americas S100X225VA1Y Box 8 Weeks, 2 Days 1
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    S100X225VA1Y Roll 8 Weeks 3,000
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    Newark S100X225VA1Y Pack 2 1
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    RS S100X225VA1Y Bulk 1,500 1
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    Interstate Connecting Components S100X225VA1Y 4,275
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    Chip1Stop S100X225VA1Y 2
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    Sager S100X225VA1Y 6,000 1,500
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    TestEquity LLC S100X225VA1Y
    • 1 $204.26
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    Panduit Corp S100X250VATY

    LABEL SELF LAMINATNG 1"X2.5" WHT
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    DigiKey S100X250VATY Bulk 15,000 5,000
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    Avnet Americas S100X250VATY Bulk 6 Weeks, 4 Days 1
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    S100X250VATY Roll 8 Weeks 10,000
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    Newark S100X250VATY Bulk 4,634 1
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    Interstate Connecting Components S100X250VATY 3,750
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    TestEquity LLC S100X250VATY
    • 1 $549.1
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    Panduit Corp S100X225VADY

    LABEL SELF LAMINATNG 1X2.25" WHT
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    DigiKey S100X225VADY Bulk 10,000 5,000
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    Master Electronics S100X225VADY 5,024
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    Panduit Corp S100X225VITY

    LABEL SELF LAMINATNG 1X2.25" YLW
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    DigiKey S100X225VITY Bulk 5,000 5,000
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    Sager S100X225VITY 5,000
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    100X2. Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1027 transistor

    Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
    Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted


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    PDF C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    7MBP100TEA060

    Abstract: AC200V AC2500 HCPL4504 TLP521 PC125 Series fuji igbt transistor modules all type of fuji igbt transistor module
    Text: 1.Package Outline Drawings a Package type : P622 Fuji Electric Co.,Ltd. DWG.NO. . Dimensions in mm MS6M0601 a 3/23 H04-004-03 2.Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output U . V Output (V). W Output (W).


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    PDF MS6M0601 H04-004-03 7MBP100TEA060 AC200V AC2500 HCPL4504 TLP521 PC125 Series fuji igbt transistor modules all type of fuji igbt transistor module

    transistor c1027

    Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
    Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted


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    PDF C1027 100x1 100x100 C1027-4-98 65x65 transistor c1027 C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents

    C1232

    Abstract: transistor C123
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


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    PDF C1232 100x10 100x100 100x1 65x65 C1232 C1232-4-98 transistor C123

    C1029

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage


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    PDF C1029 65x65 C1029

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT−IPM Type Name : 6MBP100RTB060 Spec. No. : MS6M0654 Fuji Electric Co.,Ltd. Matsumoto Factory DATE - - CHECKED - - CHECKED - - NAME APPROVED DWG.NO. DRAWN MS6M0654


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    PDF MS6M0654 H0400407a H0400403

    C1209

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1209 1.2µm EECMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold


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    PDF C1209 C1209-4-98 C1209

    C1232

    Abstract: cox 15um
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


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    PDF C1232 100x10 100x100 100x1 65x65 C1232 cox 15um

    ipm application note fuji

    Abstract: 6MBP100TEA060 AC200V AC2500 HCPL4504 TLP521 IGBT saturation fault
    Text: 1.Package Outline Drawings a Package type : P622 Fuji Electric Co.,Ltd. DWG.NO. . Dimensions in mm MS6M0702 a 3/22 H04-004-03 2.Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output U . V Output (V). W Output (W).


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    PDF MS6M0702 H04-004-03 ipm application note fuji 6MBP100TEA060 AC200V AC2500 HCPL4504 TLP521 IGBT saturation fault

    6MBP100RTB060

    Abstract: AC200V AC2500 HCPL4504 P610 P611 all type of fuji igbt transistor module fuji ipm ipm application note fuji
    Text: b 1.Package Outline Drawings Package type : P611 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4 ±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16


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    PDF MS6M0654 H04-004-03 6MBP100RTB060 AC200V AC2500 HCPL4504 P610 P611 all type of fuji igbt transistor module fuji ipm ipm application note fuji

    DIN-46228

    Abstract: swg copper wire 25 32 DIN46228 copper wire s.w.g 22 PIDG Faston 6,3 x 0,8 001300080 calibration of crimping tool 48801 BS4579 sWG 24 copper wire
    Text: 1429 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Crimp Terminals Bootlace Ferrules . . . . . . . . . . . . . . . . . . . . . . . . . . Heat Shrink Terminals . . . . . . . . . . . . . . . . . . . . . . High Current Insulated Crimp Terminals . . . . .


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    PDF element-14 UL94V-0 DIN-46228 swg copper wire 25 32 DIN46228 copper wire s.w.g 22 PIDG Faston 6,3 x 0,8 001300080 calibration of crimping tool 48801 BS4579 sWG 24 copper wire

    C1029

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage


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    PDF C1029 65x65 C1029

    P621

    Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records


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    PDF 6MBP100RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    100A 600V IGBT INVERTER CIRCUIT

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT−IPM Type Name : 7MBP100RTB060 Spec. No. : MS6M0655 Fuji Electric Co.,Ltd. Matsumoto Factory DATE - - CHECKED - - CHECKED - - NAME APPROVED DWG.NO. DRAWN MS6M0655


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    PDF MS6M0655 H0400407a H0400403 100A 600V IGBT INVERTER CIRCUIT

    P621

    Abstract: P621 capacitor fuji ipm ic or 4071 datasheet igbt driver A 4504 AC200V AC2500 P610 P611 7MBP100RTJ060
    Text: 1.Package Outline Drawings 13.8 109 ±1 95 ±0.3 66.44 ±0.3 1 0 ±0.2 3 . 2 2 ±0.3 ±0.15 ±0.2 6 ±0.15 1 0 ±0.2 1 2 ±0.25 6 ±0.15 4-φ5.5 2 ±0.1 2 ±0.3 6 10 ±0.3 P 20 10 74 88 ±1 20 B N V U 0.5 17 W 0.5 24 26 26 19-□0.5 2-φ2.5 9 +0.6 3 1 -0.3


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    PDF MS6M0676 H04-004-03 P621 P621 capacitor fuji ipm ic or 4071 datasheet igbt driver A 4504 AC200V AC2500 P610 P611 7MBP100RTJ060

    c1027 transistor

    Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
    Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted


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    PDF C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027

    C1219

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1219 CMOS 1.2µm EEPROM Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold Symbol VTN γN


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    PDF C1219 100x10 100x100 100x1 65x65 C1219

    C1029

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage


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    PDF C1029 C1029-4-98 65x65 C1029

    c1028 transistor

    Abstract: c1028
    Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor


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    PDF C1028 C1028-4-98 65x65 c1028 transistor c1028

    C1232

    Abstract: cox 15um cmos transistor 0.35 um
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


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    PDF C1232 100x10 100x100 100x1 65x65 C1232 cox 15um cmos transistor 0.35 um

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


    OCR Scan
    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    RH 3.5x9.0x0.8

    Abstract: No abstract text available
    Text: SYNTON-TECH 9 FERRITE BEAD RH TYPE EEBHSMk Shielding sig n a l noise suppression, and transient frequency damping lor E G A cards, V G A cards. P C boards, TV gam es and more. RH 3.5X6.DX0.B T T_ Taping Shape Core Dimensions Core Type Noter S: Single T: Taping


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    PDF 5X60X0 5X30X1 3-5x50x1 RH 3.5x9.0x0.8