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    BFY4 Price and Stock

    PFLITSCH GmbH & Co KG BFY-48-36-36-BK

    Y-CONNECTOR FOR CORRUGATED PIPES
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    DigiKey BFY-48-36-36-BK Bag 2
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    PFLITSCH GmbH & Co KG BFY-48-36-36-BG

    Y-CONNECTOR FOR CORRUGATED PIPES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFY-48-36-36-BG Bag 2
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    Infineon Technologies AG BFY420 (P)

    Trans GP BJT NPN 4.5V 0.035A 4-Pin Micro-X (Alt: SP000011414)
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    EBV Elektronik BFY420 (P) 26 Weeks 1
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    Infineon Technologies AG BFY420(ES)

    Trans GP BJT NPN 4.5V 0.035A 4-Pin Micro-X (Alt: SP000011419)
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    EBV Elektronik BFY420(ES) 26 Weeks 1
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    Infineon Technologies AG BFY450(ES)

    (Alt: SP000011418)
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    EBV Elektronik BFY450(ES) 26 Weeks 1
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    BFY4 Datasheets (89)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY40 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY40 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFY40 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFY40 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFY40 Unknown Cross Reference Datasheet Scan PDF
    BFY40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY40 Unknown Transistor Replacements Scan PDF
    BFY40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFY40 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFY40 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFY40 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFY40 Semico Medium Power Transistors Scan PDF
    BFY405 Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405 (ES) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY405ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405 (P) Infineon Technologies HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 22.0 GHz; Original PDF
    BFY405P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY405S Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY41 Micro Electronics Semiconductor Device Data Book Scan PDF

    BFY4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35 micro-X Package MARKING CODE 3

    Abstract: Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For High Gain Low Noise Amplifiers  For Oscillators up to 10 GHz  Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY420 25-Line Transistor25 BFY420 35 micro-X Package MARKING CODE 3 Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3

    35 micro-X Package MARKING CODE Q

    Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •


    Original     		PDF BFY450 19dBm QS9000 35 micro-X Package MARKING CODE Q BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3

    transistor "micro-x" "marking" 3

    Abstract: marking K "micro x" BFY420
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding G ms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY420 Transistor25 transistor "micro-x" "marking" 3 marking K "micro x" BFY420

    BFY42

    Abstract: BFY420
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY420 25-Line Transistor25 QS9000 BFY42 BFY420

    d marking Micro-X

    Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25 QS9000 d marking Micro-X BFY450 RF TRANSISTOR NPN MICRO-X

    Untitled

    Abstract: No abstract text available
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25

    2SC9830

    Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)


    Original     		PDF 205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550

    micro-X Package MARKING CODE C

    Abstract: INFINEON DETAIL micro-X Package MARKING CODE 3
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 BFY405 QS9000 micro-X Package MARKING CODE C INFINEON DETAIL micro-X Package MARKING CODE 3

    BFY405

    Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 QS9000 BFY405 Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"

    marking K "micro x"

    Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz


    Original     		PDF BFY450 Transistor25 marking K "micro x" MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450

    2SC2240BL

    Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
    Text: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P


    Original     		PDF BFY41 BFR21 KT630A BF156 SE7002 BSY79 2S0668 -2S0669 2SCB17 2SC2240BL BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389

    35 micro-X Package MARKING CODE Q

    Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
    Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY420 QS9000 35 micro-X Package MARKING CODE Q BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"

    MICROWAVE TRANSITOR

    Abstract: BFY405
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 Transistor25 MICROWAVE TRANSITOR BFY405

    transistor C 5611

    Abstract: INFINEON DETAIL
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 BFY405 transistor C 5611 INFINEON DETAIL

    RF TRANSISTOR NPN MICRO-X

    Abstract: BFY405
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X BFY405

    Micro-X marking "K"

    Abstract: transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz


    Original     		PDF BFY450 19dBm 25-Line Transistor25 BFY450 Micro-X marking "K" transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL

    transistor C 5611

    Abstract: 35 micro-X Package MARKING CODE Q
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY450 19dBm 25-Line Transistor25 QS9000 transistor C 5611 35 micro-X Package MARKING CODE Q

    RF TRANSISTOR NPN MICRO-X

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X

    BFY45

    Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
    Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for


    OCR Scan     		PDF BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4

    BFY33

    Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY33 BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P - i d B =19dBm 1.8 GHz Max. Available Gain G m a = 16dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY450 19dBm Transistor25 QS9000

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY420 Transistor25 QS9000

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY405 Transistor25 QS9000

    microwave transistor siemens

    Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY420 25-Line Transistor25 QS9000 microwave transistor siemens 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S