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Hirose Electric Co Ltd TM18RB-FT-66 CONN MOD JACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TM18RB-FT-66	Digi-Reel			1	1 $3.12 10 $3.12 100 $3.12 1000 $3.12 10000 $3.12	Buy Now
	TM18RB-FT-66	Cut Tape			1	1 $2.99 10 $2.99 100 $2.99 1000 $2.99 10000 $2.99	Buy Now
	TM18RB-FT-66	Reel			250	1 - 10 - 100 - 1000 $1.82784 10000 $1.82784	Buy Now
Avnet Americas	TM18RB-FT-66	Reel		26 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	TM18RB-FT-66		200			1 $3.15 10 $3.05 100 $3.05 1000 $1.82 10000 $1.82	Buy Now
Newark	TM18RB-FT-66	Reel			250	1 $2.82 10 $2.82 100 $2.82 1000 $2.82 10000 $2.5	Buy Now
Bristol Electronics	TM18RB-FT-66		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Sager	TM18RB-FT-66					1 - 10 - 100 - 1000 - 10000 -	Buy Now
KOA Speer Electronics Inc CZP2BFTTE800P Ferrite Beads 1206 80ohm 25%
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Mouser Electronics	CZP2BFTTE800P		7,591			1 $0.17 10 $0.085 100 $0.066 1000 $0.051 10000 $0.042	Buy Now
United Chemi-Con Inc KTJ251B225M55BFT00 Specialty Ceramic Capacitors 250VDC 2.2uF Tol 20% 6x5.3x6.5mm Double Stack AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	KTJ251B225M55BFT00		3,940			1 $2.96 10 $2.36 100 $1.97 1000 $1.57 10000 $1.57	Buy Now
KOA Speer Electronics Inc CZB2BFTTE600P Ferrite Beads 1206 60ohm 25%
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Mouser Electronics	CZB2BFTTE600P		2,998			1 $0.15 10 $0.103 100 $0.071 1000 $0.048 10000 $0.043	Buy Now
KOA Speer Electronics Inc CZB2BFTTE301P Ferrite Beads 1206 300ohm 25%
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Mouser Electronics	CZB2BFTTE301P		2,558			1 $0.15 10 $0.119 100 $0.066 1000 $0.04 10000 $0.038	Buy Now

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BFT 66 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
BFT66	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFT66	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BFT66	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BFT66	Siemens	EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS	Scan	PDF
BFT66	Siemens	Semiconductor Data Book (German) 1976/77	Scan	PDF
BFT66S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFT66SE	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BFT 66 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
cdi wiring diagram Abstract: BFT003 ELMOS E100 PHOTODIODE ALARM CIRCUIT ELMOS and logic gate DOTR Text: SPF BFT 003 03 Optical Bidirectional Transceiver for byteflight Data Sheet Short description of complete functional unit Features The device consists of a LED mounted on a large area photodiode for bidirectional optical transmission in half duplex mode. LED and photodiode are driven by the multifunction IC E100.34C2 from ELMOS.	Original	AV01-0740EN cdi wiring diagram BFT003 ELMOS E100 PHOTODIODE ALARM CIRCUIT ELMOS and logic gate DOTR	PDF
zo 103 ma Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67 Text: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband	OCR Scan	Q62702-F456 Q62702-F457 103MHz 102mA zo 103 ma BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67	PDF
BFT66 Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710 Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband	OCR Scan	23SbQS Q62702-F456 Q62702-F457 BFT66, BFT67 103MHz fi535b05 DQ0H715 BFT66 BFT67 BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 Q62702-F457 QQQM710	PDF
ft66 Abstract: BFT66 Text: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband	OCR Scan	fl23Sb aa35b05 0QQH715 ft66 BFT66	PDF
BFT65 Abstract: transistor bft65 f451 61 SIEMENS 25813 Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration	OCR Scan	BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813	PDF
TC51V16325B Abstract: MJ-13 Text: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro	OCR Scan	TC51V16325BJ/BFT-70 TC51V16325BJ/BFT TC51V16325BJ/ 400mil) I/024 I/025 I/032 TC51V16325B MJ-13	PDF
TC5118325B Abstract: mx c511 tc5118325 Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) J/BFT-70 DR16220995 TC5118325B mx c511 tc5118325	PDF
BE423 Abstract: No abstract text available Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro	OCR Scan	TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423	PDF
Untitled Abstract: No abstract text available Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536	OCR Scan	TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1	PDF
Untitled Abstract: No abstract text available Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro	OCR Scan	724fl TC51V16325BJ/BFT-70 TC51V16325BJ/BFT 16325B 400mil)	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both	OCR Scan	TC5118320B J/BFT-60/70 TC5118320BJ/BFT 400mil) DR16210994 D027714 TC5118320BJ/BFT-60/70	PDF
Untitled Abstract: No abstract text available Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to	OCR Scan	TC51V18325BJ/BFT-60/70 TheTC51V18325BJ/BFT TC51V18325BJ/BFT 400mii) 400mil) tem01	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro	OCR Scan	TC5118325BJ/BFT-70 18325BJ/BFT 5118325B 400mil) I/032	PDF
Untitled Abstract: No abstract text available Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to	OCR Scan	023SbOS Q62702-F390	PDF

Transistor BFT 99 Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44 Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF	OCR Scan	Q0G4713 Q62702-F513 051i0 Transistor BFT 99 BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44	PDF
2f5 transistor Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75 Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF	OCR Scan	a23SbOS 2f5 transistor Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75	PDF
Untitled Abstract: No abstract text available Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC5332410 BF / BFT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by	OCR Scan	TC5332410 TC5332410BF/BFT 432-bit 70-pin TC5332410BF/B 685TYP 87MAX	PDF
Untitled Abstract: No abstract text available Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.	OCR Scan	TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.	OCR Scan	TC5332410BF/BFT TC5332410BF/BFT 432-bit 70-pin	PDF
mst 702 lf Abstract: P63A Text: MITSUBISHI MICROCOMPUTERS M37267M4-XXXSP, M37267M6-XXXSP, M37267M8-XXXSP M37267EE-XXXSP, M37267EESP SINGLE-CHIP 8-BfT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37267M4-XXXSP, M37267M6-XXXSP and M37267M8-XXXSP	OCR Scan	M37267M4-XXXSP, M37267M6-XXXSP, M37267M8-XXXSP M37267EE-XXXSP, M37267EESP M37267M6-XXXSP 52-pin mst 702 lf P63A	PDF
Untitled Abstract: No abstract text available Text: SN54LS671, SN54LS672, SN74LS671, SN74LS672 4-BIT UNIVERSAL SHIFT REGISTERSILATCHES WITH 3-STATE OUTPUTS D2638, JANUARY 1981 - REVISED MARCH 1988 4-Bft Universal Shift Registers/Latches SN54LS671, 8N64LS672 . . . J PACKAGE SN74LS671, SN74LS672 . . . DW OR N PACKAGE	OCR Scan	SN54LS671, SN54LS672, SN74LS671, SN74LS672 D2638, TLS671) CLS672) LS671 LS672 LS194A)	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking	OCR Scan	Q62702-F456 00b743fi 623SbD5 BFT66 flE35bOS	PDF
Untitled Abstract: No abstract text available Text: I Preliminary Spec. MITSUBISHI LSIs MH1 M325DXJ/DNXJ-5,-6,-7 HYPER PAGE MODE 33554432-BfT 1048576-WQRD BY 32-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Single side] DESCRIPTION The M H1M 325CXJ/CNXJ is 1048576-word x 32-bits dynam ic RAM. This consists of two industry standard 1M x16 dynamic	OCR Scan	M325DXJ/DNXJ-5 33554432-BfT 1048576-WQRD 32-BIT 325CXJ/CNXJ 1048576-word 32-bits MH1M325DXJ/DNXJ-7 MH1M325DXJ/DNXJ-8 Ju1/23/1998	PDF
Untitled Abstract: No abstract text available Text: TC59LM814/06/02 BFT-22,-24,-30 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,1 9 4,3 0 4 -W O R D SX 4 BA N K SX 1 6-BITS DOUBLE DATA RATE FAST CYCLE R AM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM	OCR Scan	TC59LM814/06/02 BFT-22 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59LM814/06/02BPT TC59LM814BFT 304-wordsX TC59LM806BFT TC59LM802BFT TC59LM814/06/02BFT	PDF

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BFT 66 Search Results

BFT 66 Price and Stock

Hirose Electric Co Ltd TM18RB-FT-66

KOA Speer Electronics Inc CZP2BFTTE800P

United Chemi-Con Inc KTJ251B225M55BFT00

KOA Speer Electronics Inc CZB2BFTTE600P

KOA Speer Electronics Inc CZB2BFTTE301P

BFT 66 Datasheets (7)

BFT 66 Datasheets Context Search

cdi wiring diagram

zo 103 ma

BFT66

ft66

BFT65

TC51V16325B

TC5118325B

BE423

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Transistor BFT 99

2f5 transistor

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mst 702 lf

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