MB834000
Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010
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MX27C256
i27C256
Am27C256
NM27C256
M27C256
MX27C512
i27C512
Am27C512
NM27C512
M27C512
MB834000
M5M23160
MB834100
MB838000
MB832000
SGS M27C256
I27C256
KM23C1010
M27C256
M27C256 intel
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Untitled
Abstract: No abstract text available
Text: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.
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TC5332410BF/BFT
TC5332410BF/BFT
432-bit
70-pin
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Untitled
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC5332410 BF / BFT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by
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TC5332410
TC5332410BF/BFT
432-bit
70-pin
TC5332410BF/B
685TYP
87MAX
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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