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    BFR91 MOTOROLA Search Results

    BFR91 MOTOROLA Result Highlights (2)

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    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    BFR91 MOTOROLA Datasheets Context Search

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    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA


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    PDF 2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


    Original
    PDF 2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola

    S-21170

    Abstract: AX1610
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR91 The RF Line fT = 5.0 GHz @ 30 mA HIGH FR EQ U EN C Y T R A N SISTO R NPN SILIC O N HIGH FR EQ U EN C Y TR A N S IS TO R NPN SILICO N . . .designed p rim arily for use in high-gain, low-noise, small-signal am plifiers. Also used in applications requiring fast switching times.


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    PDF BFR91 S-21170 AX1610

    MRFC911

    Abstract: motorola dice
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 De | b3fc.7E5S <D I O D E S / O P T O 34C t^ a C H S D 3 3 0 9 5 SILICON RF TRANSISTOR DICE continued) ’ y , £)-/<? MRFC911 DIE NO. — NPN LINE SOURCE — RF502.104 This die provides performance equal to or better than that


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    PDF RF502 MRF911 BFR91 MRFC911 MRFC911 motorola dice

    SILICON SMALL-SIGNAL DICE

    Abstract: SILICON DICE motorola
    Text: I m ! 6367255 MOTOROLA SC DE^b3b?ass D IODES/OPTO dd 34C SILICON RF TRANSISTOR DICE (continued) 3ögöd 38080 7 “- j m |~ D tr BFRC91 DIE NO. — NPN LINE SOURCE — RF502.104 This die provides performance equal to or better than that of the following device types:


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    PDF RF502 BFR91 BFRC91 SILICON SMALL-SIGNAL DICE SILICON DICE motorola

    MRF931

    Abstract: MRF961 MRF580 BFR90 transistor RF Transistor Selection MRF511 case 317-01 transistor bfr96 transistor MRF536 2N5943
    Text: RF SMALL-SIGNAL TRANSISTORS continued Small-Signal Amplifier Transistor Selection by Package In small-signal RF applications the package style is often determined by the end application, or circuit construction technique. To aid the circuit designer in device selection, below are listed the Motorola broad range of RF small-signal amplifier transistors organized


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    PDF 2N5109 2N5943 MRF525t MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF931 MRF961 MRF580 BFR90 transistor RF Transistor Selection case 317-01 transistor bfr96 transistor MRF536

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


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    PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    mrf502 gold transistor

    Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911

    2n4427 MOTOROLA

    Abstract: MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 2N3866, 2N3866A 2N5160, MM4018, 2N3948, 2N4427, MRF207 2N5109, 2n4427 MOTOROLA MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583

    317A-01

    Abstract: 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91
    Text: RF SMALL-SIGNAL TRANSISTORS continued CATV, MATV, and Class A Linear Transistors The devices listed below are excellent for Class A linear C A TV/M ATV applications and are listed according to increasing gainbandwidth (fj) . More information concerning the device for your specific linear design needs can be obtained through your local


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    PDF MRF501 MRF502 2N5179 BFY90 BFX89 MRF587 44A-01 2N3959 2N3960 2N5835 317A-01 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91

    MRF542

    Abstract: MRF545 BFR90 transistor mrf544 high gain PNP RF TRANSISTOR transistor bfr96 2n4427 motorola 2N4427 MRF511 MRF543
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF542 MRF545 BFR90 transistor mrf544 high gain PNP RF TRANSISTOR transistor bfr96 2n4427 motorola 2N4427 MRF511 MRF543

    2N3866 MOTOROLA

    Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957

    MMBR930

    Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,


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    PDF DQ141S1 2N6604 Symbo73 MMBR930 tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063

    MOTOROLA TRANSISTOR MRF239

    Abstract: MRF239 MRF212 MOTOROLA SELECTION mrf237 MRF238 mrf237 MOTOROLA mrf239 MOTOROLA MRF260 145A-09 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 45A-09 MRF264 T0-220AB MRF1946/A# 2N6084 MRF224 MRF4070* MOTOROLA TRANSISTOR MRF239 MRF239 MRF212 MOTOROLA SELECTION mrf237 MRF238 mrf237 MOTOROLA mrf239 MOTOROLA MRF260 145A-09 MRF237

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    case 317-01

    Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors

    MRF536

    Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160

    MRF911

    Abstract: F914 2N6604
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6604 The RF Line N F « 2.7 dB 1.0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR .d e s ig n e d for use in high-frequency, low-noise, small-signal, narrow and wideband amplifiers. Ideal fo r use in m icrostrip th in


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    PDF 2N6604 IS22I MRF911 F914 2N6604

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239