BEL187
Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2
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2SB1296
2SB1295
BFX12
BFX13
KT361
2SB1118S
2SB808
2SB1118E
BEL187
NA22XX
BC262A
LOW-POWER SILICON PNP
2SA523
NA22XH
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BFQ32M
Abstract: BFQ63 UHF pnp transistor
Text: bbSB'lBl O G B I S m Philips Semiconductors ô3H M A P X Product specification PNP 4 GHz wideband transistor BFQ32M ^ Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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OCR Scan
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QD31Sm
BFQ32M
BFQ63.
bbS3T31
0D31543
BFQ32M
UB834S
MBB347
BFQ63
UHF pnp transistor
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BFQ32M
Abstract: transistor D 587 BFQ63 GHz PNP transistor
Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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OCR Scan
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BFQ32M
711062b
0DHS43Q
BFQ63.
IS22I
7110flEb
00M5M35
MBB347
BFQ32M
transistor D 587
BFQ63
GHz PNP transistor
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BFQ32M
Abstract: No abstract text available
Text: Philips Semiconductors bbBB'lBl 0031541 fi34 M APX Product specification PNP 4 GHz wideband transistor I BFQ32M . N Af1ER DESCRIPTION philips /discrete ERE PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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OCR Scan
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BFQ32M
BFQ63.
500MHz
0D31SM3
MBB347
BFQ32M
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BFQ32M
Abstract: of bfq63 BFQ63 transistor 643
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ63
711002b
BFQ32M.
7110fl2b
0D454fl7
BFQ32M
of bfq63
BFQ63
transistor 643
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Untitled
Abstract: No abstract text available
Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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OCR Scan
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lati53T31
00315T5
BFQ63
BFQ32M.
MEA302
MBB773
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BFQ63
Abstract: BFQ32M of bfq63
Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the
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OCR Scan
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bbS3T31
BFQ63
BFQ32M.
D0315T8
BFQ63
ls12l2
BFQ32M
of bfq63
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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OCR Scan
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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SOT-173
Abstract: sot173 BFP96 BFQ32C
Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A
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BFG198
BFG505
BFG505/X
BFG505/XR
BFG520
BFG520/X
BFG520/XR
BFG540
BFG540/X
BFG540/XR
SOT-173
sot173
BFP96
BFQ32C
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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OCR Scan
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OT122
OT143
OT223
OT323
BFS17W
BFG17A
BFG16A
BF547W
BF747W
BFT25
BFG591 amplifier
SC08a
bfr591
sot173x
BB544
sot122
sot172
bfg65 sot143
SIEMENS BFP520
macro-X ceramic
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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OCR Scan
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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sot37
Abstract: sot-37 T173 RE SOT
Text: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37
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OCR Scan
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BFW17A
BFW30
BFW92
BFW92A
BFW93
BFY90
BFG32
BFQ23
BFQ23C
BFQ24
sot37
sot-37
T173
RE SOT
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