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    BFQ253 Search Results

    BFQ253 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFQ253 Philips Semiconductors PNP 1 GHz Video Transistor Original PDF
    BFQ253 Philips Components Datasheet Library 1989 Scan PDF
    BFQ253A Philips Semiconductors PNP 1 GHz Video Transistor Original PDF

    BFQ253 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips bfq

    Abstract: BFQ253A BFQ233 BFQ233A BFQ253
    Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF 03173b BFQ253; BFQ253A BFQ233 BFQ233A fcj53131 BFQ253A philips bfq BFQ253

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ253; BFQ253A BFQ233 BFQ253 0D3173T

    GHz PNP transistor

    Abstract: BFQ253 mb8833 Philips MBB BFQ233 BFQ233A BFQ253A
    Text: Philips Semiconductors — 33 PNP 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N Product specification - / ^ ' BFQ253; BFQ253A 5bE 7110flEb D[]i45b2S Ö3M IPHIN P IN N IN G P N P silicon epitaxial transistor in a S O T 5 T O -3 9 envelope with


    OCR Scan     		PDF BFQ253; BFQ253A 7110fl2b BFQ233 BFQ233A T-33-17 711gfleb GHz PNP transistor BFQ253 mb8833 Philips MBB BFQ253A

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    BFQ233

    Abstract: BFQ253
    Text: Philips Components B FQ 233 JV NPN HIGH F R E Q U E N C Y H IG H V O L T A G E T R A N S IS T O R NPN silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down


    OCR Scan     		PDF BFQ253. BFQ233 BFQ233 BFQ253

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BFQ161

    Abstract: SOT37
    Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO


    OCR Scan     		PDF OT-323 OT-37 OT-23 BFQ161 SOT37

    BLY32

    Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
    Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors


    OCR Scan     		PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    BFQ233

    Abstract: BFQ253A BFQ233A BFQ253
    Text: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF T-33-05 BFQ233; BFQ233A 7110fl2b BFQ253 BFQ253A MBB634 BFQ233 BFQ233A

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    sot37

    Abstract: sot-37 T173 RE SOT
    Text: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37


    OCR Scan     		PDF BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 BFG32 BFQ23 BFQ23C BFQ24 sot37 sot-37 T173 RE SOT

    1Ft TRANSISTOR

    Abstract: properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor
    Text: Philips Components _ A PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down


    OCR Scan     		PDF BFQ253 BFQ233. 1Ft TRANSISTOR properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors M bb.53^31 ODBITD1! 200 • A P X ^Productspecificatlon NPN 1 GHz video transistors BFQ233; BFQ233A 1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ233; BFQ233A BFQ253 BFQ253A 0D31713

    128-B

    Abstract: SOT128B bfq162
    Text: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A


    OCR Scan     		PDF BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A 128-B SOT128B