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    Infineon Technologies AG BFP420H6327XTSA1

    RF TRANS NPN 5V 25GHZ SOT343
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    DigiKey BFP420H6327XTSA1 Cut Tape 25,948 1
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    BFP420H6327XTSA1 Digi-Reel 25,948 1
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    BFP420H6327XTSA1 Reel 18,000 3,000
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    Mouser Electronics BFP420H6327XTSA1 14,731
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    Rochester Electronics BFP420H6327XTSA1 88,400 1
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    TME BFP420H6327XTSA1 5,242 1
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    Chip One Stop BFP420H6327XTSA1 Cut Tape 6,000
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    Win Source Electronics BFP420H6327XTSA1 316,000
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    Infineon Technologies AG BFP420H6801XTSA1

    RF TRANS NPN 5V 25GHZ SOT343
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    DigiKey BFP420H6801XTSA1 Cut Tape 8,825 1
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    BFP420H6801XTSA1 Digi-Reel 8,825 1
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    BFP420H6801XTSA1 Reel 6,000 3,000
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    Avnet Americas BFP420H6801XTSA1 Reel 8 Weeks 9,000
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    Rochester Electronics BFP420H6801XTSA1 165,455 1
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    EBV Elektronik BFP420H6801XTSA1 9 Weeks 3,000
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    Win Source Electronics BFP420H6801XTSA1 239,000
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    Infineon Technologies AG BFP420H6740XTSA1

    RF TRANS NPN 5V 25GHZ SOT343
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    DigiKey BFP420H6740XTSA1 Digi-Reel 8,356 1
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    BFP420H6740XTSA1 Cut Tape 8,356 1
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    BFP420H6740XTSA1 Reel 3,000 3,000
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    Avnet Americas BFP420H6740XTSA1 Reel 8 Weeks 9,000
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    Rochester Electronics BFP420H6740XTSA1 686,000 1
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    Rochester Electronics LLC BFP420E6327

    RF TRANSISTOR, X BAND, NPN
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    DigiKey BFP420E6327 Bulk 1,888
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    Infineon Technologies AG BFP-420F-E6327

    RF TRANS NPN 5V 25GHZ 4TSFP
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    DigiKey BFP-420F-E6327 Reel 3,000
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    BFP420 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP420 Infineon Technologies NPN Silicon RF transistor for low noise, high gain amplifiers Original PDF
    BFP420 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 25.0 GHz; F (typ): 1.1 dB; Original PDF
    BFP420 Siemens NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) Original PDF
    BFP420 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP420E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP420E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP420E6433 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP420E6433 Infineon Technologies TRANS GP BJT NPN 4.5V 0.035A 4 Original PDF
    BFP420E6433HTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP420E6740 Infineon Technologies TRANS GP BJT NPN 4.5V 0.035A 4 Original PDF
    BFP420E6801 Infineon Technologies TRANS GP BJT NPN 4.5V 0.035A 4 Original PDF
    BFP420ECSP Infineon Technologies BFP420ECSP Original PDF
    BFP420F Infineon Technologies NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 Original PDF
    BFP420F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.5 V; IC(max): 35.0 mA; Ptot (max): 160.0 mW; fT (typ): 25.0 GHz; F (typ): 1.1 dB; Original PDF
    BFP 420F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP420FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP420FE6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.035 Original PDF
    BFP420FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 5.5V 35MA 4TSFP Original PDF
    BFP420FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 5.5V 35MA 4TSFP Original PDF
    BFP420GEG Infineon Technologies TRANS GP BJT NPN 4.5V 0.03 Original PDF

    BFP420 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C547* transistor

    Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
    Text: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


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    BFP420 BFP420. 10dBm C547* transistor BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5 PDF

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


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    BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420 PDF

    BFP420 application notes

    Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420 VPS05605 OT343 45GHz -j100 Aug-20-2001 BFP420 application notes BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BFP420F BFP420F: PDF

    BFP420 application notes 900MHz

    Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
    Text: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


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    BGC420 BFP420 SCT598-Package VPW05982 Q62702-G0092 SCT598 BGC420 BFP420 application notes 900MHz SCT598-Package BFP420 application notes BFP420 Q62702-G0092 500R 134fF IC LP7 3770E-01 PDF

    A01 MMIC

    Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
    Text: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level


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    BFP420, CMY91 BFP183W 10dBm A01 MMIC siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm PDF

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR PDF

    C547* transistor

    Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
    Text: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at


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    BFP420 BFP420. C547* transistor BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420 PDF

    BFP420 application notes

    Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420 OT343 BFP420 application notes INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420 PDF

    INFINEON BFP420 Ams

    Abstract: BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420 OT343 INFINEON BFP420 Ams BFP420 BGA420 PDF

    BFP420 application notes

    Abstract: Transistor BFP420 BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420 VPS05605 OT343 BFP420 application notes Transistor BFP420 BFP420 PDF

    BFP420

    Abstract: No abstract text available
    Text: BFP420 Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers 3 • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz 2 4 Outstanding G ms = 21 dB at 1.8 GHz 1 • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free RoHS compliant and halogen-free package


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    BFP420 AEC-Q101 OT343 BFP420 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420F PDF

    marking ams

    Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420F 100MHz. EHA07307 Dec-07-2001 marking ams TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BFP420F BFP420F: PDF

    BFP420 application notes 900MHz

    Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
    Text: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a


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    BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400 PDF

    INFINEON BFP420 Ams

    Abstract: BFP420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420 OT343 726-BFP420E6740 E6740 INFINEON BFP420 Ams BFP420 PDF

    BFP420F

    Abstract: No abstract text available
    Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420F BFP420F PDF

    transistor bfp420

    Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    BFP420 VPS05605 OT343 transistor bfp420 INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor PDF

    BCR400

    Abstract: BFP420 BFP420 application note SIEMENS BFP420
    Text: Application Note No. 017 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3outperformance at 1.9 GHz using BFP420 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP420. The design emphasis has been on achieving high output


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    BFP420 BFP420. 23dBm 100pF BCR400 BFP420 BFP420 application note SIEMENS BFP420 PDF

    diode t25 4 G9

    Abstract: diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 BFP420 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45
    Text: Siemens Matsushita Components Application Note Using the B4204 PCN 2in1 Filter with a LNA based on the BFP420 RF Transistor Horst Germann S+M OFW E MF October 30, 1998 Munich, Germany Reg.-No.: MFAPP03A Siemens Matsushita Components SAW Components Application: Using B4204 with a LNA based on BFP420


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    B4204 BFP420 MFAPP03A BFP420 L585C) diode t25 4 G9 diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45 PDF

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


    OCR Scan
    BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor PDF

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan
    BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a PDF