Untitled
Abstract: No abstract text available
Text: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast
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bS3T31
BUW133
-33-j3
BUW133H
BUW133
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M1570
Abstract: M1568 T032-1 BYW93 BYW93-50 BYW93-50U M1569 BVW93
Text: N AMER PHILIPS/ DISCRET E MAINTENANCE TYPE 2SE D • [=^53^31 G0227Ô3 3 ■ BYW93 SERIES T - 0 3 - 21 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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G0227Ã
BYW93
T-03-21
byw93â
m1570
m1671
m1572
M1570
M1568
T032-1
BYW93-50
BYW93-50U
M1569
BVW93
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BUY89
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.
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BUY89
bfaS3131
BUY89
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tsv 518
Abstract: BUW133 BUW133A BUW133H 133h
Text: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast
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BUW133
T-33-13
BUW133H
7Z21439
tsv 518
BUW133A
133h
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Thyristor TAG 87
Abstract: thyristor TAG 13
Text: ObE D N AMER PHILIPS/DISCRETE bti53,i31 0011643 b BT153 *s -i3 JK 1 FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a TO-220AB envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator,
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bti53,
BT153
O-220AB
bbS3T31
7Z82059
Thyristor TAG 87
thyristor TAG 13
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M-988
Abstract: BU306F 307F BU307F BU306
Text: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically
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bfaS3131
BU306F
BU307F
OT186
T-33-09
7Z9467?
M-988
307F
BU307F
BU306
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transistor mosfet bf964s
Abstract: BF964SA BF964S 10103F
Text: BF964S J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable fo r use in professional
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BF964S
transistor mosfet bf964s
BF964SA
BF964S
10103F
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m1573
Abstract: diode h5e BYW92 BYW92-50U BYW92-50 M1574
Text: AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D • ^53=131 ¿022775 4 ■ . | BYW92 SERIES T -0 3 -1 ^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW92
BYW92â
bfaS3131
T-03-19
bbS3T31
m1573
diode h5e
BYW92-50U
BYW92-50
M1574
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TO-319
Abstract: Ultra Fast Recovery Double Rectifier Diodes metallic rectifier diode BYV32 IEC134 t0319
Text: - N AMER P H IL IP S /D IS C R E T E 2SE D • - ' - | bbS3T31 005SSS3 dï V<5'd Ô ■ SLRIES T - o S - jC } ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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005SSS3
BYV32
bbS3131
G0225b2
T-03-Ã
TO-319
Ultra Fast Recovery Double Rectifier Diodes
metallic rectifier diode
IEC134
t0319
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