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    BF994 Price and Stock

    NXP Semiconductors BF994S,215

    RF MOSFET 15V SOT143B
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    DigiKey BF994S,215 Reel
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    Bristol Electronics BF994S,215 1,192
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    Quest Components BF994S,215 953
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    NXP Semiconductors BF994S

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    Bristol Electronics BF994S 41,322
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    YAGEO Corporation BF994S,215

    VHF BAND, SI, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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    Quest Components BF994S,215 384
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    BF994S,215 384
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    Philips Semiconductors BF9943

    INSTOCK
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    Chip 1 Exchange BF9943 25,941
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    Others BF994

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    BF994 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF994 Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF994 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF994 Siemens Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) Original PDF
    BF994 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode Original PDF
    BF994 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF994 Siemens Components for Surface Mounting 1983/4 Scan PDF
    BF994R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF994R Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF 994 S Infineon Technologies TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF994S International Rectifier N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF994S NXP Semiconductors BF994S - N-channel dual-gate MOS-FET - CIS TYP: 2.5 pF; COS: 1 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 1 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF
    BF994S Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF994S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF994S Siemens Cross Reference Guide 1998 Original PDF
    BF994S Siemens Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) Original PDF
    BF994S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF994S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF

    BF994 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF994

    Abstract: BF994S BF994SA BF994SB sot-143 vishay telefunken
    Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB sot-143 vishay telefunken PDF

    gl 1117 B

    Abstract: Bf 994 BF994S
    Text: BF994S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages especially for VHF TV-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		BF994S BF994S D-74025 03-Mar-97 gl 1117 B Bf 994 PDF

    BF994S

    Abstract: No abstract text available
    Text: BF994S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		BF994S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF994S PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF994S BF994 D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		BF994S OT-143 D-74025 20-Aug-04 PDF

    BF994S

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		BF994S OT143 R77/02/pp8 BF994S dual-gate PDF

    gl 1117 B

    Abstract: BF994S
    Text: BF994S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages especially for VHF TV-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		BF994S BF994S D-74025 16-Apr-96 gl 1117 B PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		BF994S OT143 R77/02/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		BF994S 2002/95/EC 2002/96/EC OT-143 D-74025 02-Mar-05 PDF

    BF994S

    Abstract: voltage transducer
    Text: BF994S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		BF994S OT-143 D-74025 20-Aug-04 BF994S voltage transducer PDF

    BF994

    Abstract: BF994S BF994SA BF994SB
    Text: BF994S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB PDF

    gl 1117 ax

    Abstract: BF994
    Text: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes


    OCR Scan     		BF994S BF994S 03-Mar-97 gl 1117 ax BF994 PDF

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S ymmt ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g . A Applications In p u t- an d m ix e r s ta g e s e s p e c ia lly V H F T V -tu n e rs .


    OCR Scan     		BF994S 20-Jan-99 PDF

    BF994S

    Abstract: Marking G2 sot143 code marking MS mosfet marking code gg
    Text: 7110SEL G D b 7 5 ti4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 143 microminiature envelope w ith source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		BF994S OT143 BF994S Marking G2 sot143 code marking MS mosfet marking code gg PDF

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code


    OCR Scan     		flS3b32Q BF994S Q62702-F963 Q62702-F1020 T-31-25 23b320 PDF

    BF994 M94

    Abstract: BF994 FET MARKING CODE
    Text: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and


    OCR Scan     		Q0i30Qa BF994 BF994 M94 BF994 FET MARKING CODE PDF

    BF994S

    Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
    Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.


    OCR Scan     		bbS3T31 BF994S OT143 BF994S L7E transistor n Power mosfet depletion free transistor bs 200 PDF

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER PHILIPS/DISCRETE _I t _ b b s a ^ i ooi3Qoa 4 BF994 A T - 31- 3 ^ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope w ith source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and


    OCR Scan     		BF994 PDF

    BF994S marking code

    Abstract: BF994S
    Text: I I t.3E D • 1,1^3^24 G Ü 7 4 3 1 0 «SIC3 BF994S A napc/philips sehicond FO R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC07 O R D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope with source and


    OCR Scan     		7M310 BF994S OT143 BF994S marking code BF994S PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and


    OCR Scan     		BF994S 711002b 003407b OT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		bbS3T31 QQ23ti2S BF994S OT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		711002b BF994S OT143 PDF

    BF994S

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF994S APPLICATIONS • VHF applications in television tuners. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT 143


    OCR Scan     		BF994S BF994S PDF