BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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Original
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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Original
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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Original
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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Original
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MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
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PDF
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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Original
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MSC2295-BT1
MSC2295-CT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF245
BC237
mps8093
bf244
MSA1022
msc2295
MAD1107P
MPS6568
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PDF
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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Original
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BAT54T1
Ju218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
stencil
BC237
automatic heat detector project report
BC393 equivalent
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PDF
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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Original
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BS170
226AA)
DS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
bs170 replacement
BC237
BC30
transistor K 2056
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PDF
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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Original
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BC337
BC338
226AA)
Junction218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor bc237 bc337
replacement transistor BC337
bc337 TRANSISTOR equivalent
bc338 equivalent
BC337 TO-92 Generic
BC337 circuit example
BC160-16
BC337-25 "pin compatible"
BC237
BC338 REPLACEMENT
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PDF
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transistor MPS5771
Abstract: BC237 bfw4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit
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Original
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MMBD914LT1
236AB)
DE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor MPS5771
BC237
bfw4
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PDF
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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Original
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PZTA92T1
261AA
ELECTRI218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
P2d MARKING CODE
H2A transistor
ev 2816
BC237
transistor 2N2906
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PDF
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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Original
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2N5457
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N5457 MOTOROLA
2N5457 equivalent
BC237
transistor 2N5457
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PDF
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BC237
Abstract: jedec package TO-226AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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Original
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BAV99LT1
236AB)
J218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
jedec package TO-226AA
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PDF
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2n1613 equivalent
Abstract: BC237 diode l 0607
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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Original
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SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99RWT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n1613 equivalent
BC237
diode l 0607
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PDF
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bc373 equivalent
Abstract: BC372 equivalent BC237 JC 201 SC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES
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Original
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BC372
BC373
226AA)
BC373
Case218A
MSC1621T1
MSC2404
MSD1819A
MV1620
bc373 equivalent
BC372 equivalent
BC237
JC 201 SC
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PDF
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BF391
Abstract: No abstract text available
Text: BF391 thru M A X IM U M RATINGS R a tin g S ym b o l BF BF BF 391 3 9 2 3 9 3 Unit BF393 CASE 29-04, STYLE 1 TO-92 TO-226AA C olle cto r-E m itte r Voltage VCEO 200 250 300 Vdc C ollector-Base Voltage VCBO 200 250 300 Vdc E m itter-Base Voltage vebo 6.0
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OCR Scan
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BF391
BF393
O-226AA)
BF391
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PDF
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BF391
Abstract: BF391 motorola
Text: BF391 thru M A X IM U M RATIN GS R a tin g Sym bol BF BF BF BF393 U n it 391 3 92 3 9 3 C o ll e c to r - E m it te r Volta ge VCEO 200 250 300 Vdc Co lle ct o r - B a s e Volta ge VCBO 200 250 300 Vdc Em it te r- B a s e Vo ltage CASE 29-04, STYLE 1 TO-92 TO-226AA
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OCR Scan
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BF391
BF393
O-226AA)
BF391
BF391 motorola
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PDF
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bc550 bc560
Abstract: BC415 BC548 ,BC558 MPSA18 BC558 BC327 BC337 noise figure BC337-16 CBE BC337-25 CBE BC547A bc447 MPSA18 BC550 BC547B CBE
Text: Small-Signal Plastic P L A S T IC - E N C A P S U L A T E D S M A L L - S IG N A L T R A N S IS T O R S F O R IN D U S T R IA L A N D C O N S U M E R A P P L IC A T IO N S The Small-Signal Plastic Transistors represent Motorola's broadest product line. From R F/V H F/U H F
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OCR Scan
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TRAN50
bc550 bc560
BC415
BC548 ,BC558
MPSA18 BC558
BC327 BC337 noise figure
BC337-16 CBE
BC337-25 CBE
BC547A bc447
MPSA18 BC550
BC547B CBE
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PDF
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MPS2307
Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in
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OCR Scan
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BF844
MPSA44
BF845
MPSA45
2N6517
BF393
BCX53
BCX78
BCX59
BCX79
MPS2307
differential amplifier 2n5551
2N6520 MOTOROLA
BF493
MPS A92 transistor
2N6515
2N6516
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PDF
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