BF1012 Search Results

BF1012 Price and Stock

Filter by Manufacturer


Festo DARQ-B-F1012-F10-R1 MOUNTING FLANGE ADAPTER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DARQ-B-F1012-F10-R1	Bulk			1	1 $206.38 10 $206.38 100 $206.38 1000 $206.38 10000 $206.38	Buy Now
Siemens CMBF10120 (ALTERNATE: CMBF10120) CONTACTOR-LTG-COMBO, CB,200A, N1,120V, ; CMBF10120 \| Siemens CMBF10120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	CMBF10120 (ALTERNATE: CMBF10120)	Bulk		2 Weeks	1	1 $15022.49 10 $14271.37 100 $14271.37 1000 $14271.37 10000 $14271.37	Get Quote
Festo DARQ-B-F1012-F10-R1 (ALTERNATE: 8087464) Mounting Flange Adapter, for process valve actuator, 10 & 12 to 10, SS \| Festo DARQ-B-F1012-F10-R1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	DARQ-B-F1012-F10-R1 (ALTERNATE: 8087464)	Bulk			1	1 $247.65 10 $247.65 100 $247.65 1000 $247.65 10000 $247.65	Get Quote

BF1012 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BF1012		Siemens	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network		Original	PDF
BF1012		Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide		Original	PDF
BF1012		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BF1012		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BF1012S		Infineon Technologies	Silicon N-Channel MOSFET Tetrode		Original	PDF
BF1012S		Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide		Original	PDF
BF1012S		Siemens	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)		Original	PDF
BF1-012-S500-11		E-tec Interconnect	Connector: Wire to Board Connector: F: 12: 2.54: THRU		Original	PDF
BF1012SRE6327		Infineon Technologies	TRANS MOSFET N-CH 16V 0.025A 4SOT-143 T/R		Original	PDF
BF1012W		Infineon Technologies	TRANS MOSFET N-CH 16V 0.04A 4SOT-343		Scan	PDF
BF1012W		Siemens	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)		Scan	PDF

BF1012 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bf1012s Abstract: BF1012 VPS05178 Text: BF1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178	PDF
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes	PDF
MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932	PDF
MMBD2103 Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N	PDF
SMD Codes Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101	PDF
transistor SMD s72 Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той	Original	OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p	PDF
Y3ES Abstract: BF1012 marking ag1 marking S98 BF1012W Marking kx Mosfet Silicon N Channel MOSFET Tetrode Text: S IE M E N S Prelim inary Data BF1012W SILICON N-CHANNEL MOSFET TETRODE • For low-noisa, gain-controlled inpul stages up tü 1 G H z • • O perating volt&ge 12 V Inlegrated bias Network 1 T yp e M ark in g O rd e rin g C o d e Pin C ä h fig u r a tiü i	OCR Scan	BF1Q12W U62703-F1S OT343 BF1012W Y3ES BF1012 marking ag1 marking S98 Marking kx Mosfet Silicon N Channel MOSFET Tetrode	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S	OCR Scan	BF1012S Q62702-F1627 1012S T-143 200MHz	PDF
DB1-822 Abstract: BF1012 Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627	OCR Scan	BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012	PDF
marking G2s Abstract: No abstract text available Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S	OCR Scan	BF1012S BF1012S Q62702-F1627 OT-143 200MHz 200MHz marking G2s	PDF
BDP 284 Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	OCR Scan	3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529	PDF
CFY19-22 Abstract: CFY19 Dual-Gate* bf981 bf987 Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '	OCR Scan	BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987	PDF
diode S6 78A Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14	OCR Scan	O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network , D rain AG C o - X . HF oInput G2 I H F Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	EHA07215 62702-F1487 200MHz	PDF