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    BF10 Search Results

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    SiT9121A-BF10001 SiTime 1 to 220 MHz, ±10 to ±50 ppm Differential XO Datasheet
    SF Impression Pixel

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    Toshiba America Electronic Components TMPM36BF10FG(DBB)

    IC MCU 32BIT 1MB FLASH 100LQFP
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    DigiKey TMPM36BF10FG(DBB) Tray 269 1
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    JRH Electronics 805-061-16M19-85BF108

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    DigiKey 805-061-16M19-85BF108 94 1
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    JRH Electronics 805-061-16M15-37BF105

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    DigiKey 805-061-16M15-37BF105 88 1
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    JRH Electronics 805-061-16MT13-31BF107

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    DigiKey 805-061-16MT13-31BF107 81 1
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    JRH Electronics 805-061-16M11-19BF109

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    DigiKey 805-061-16M11-19BF109 73 1
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    BF10 Datasheets (138)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF-100.000MBE-T TXC Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD Original PDF
    BF-100.000MCE-T TXC Oscillators, Crystals and Oscillators, OSC XO 100.000MHZ LVDS SMD Original PDF
    BF100-06-A-C-0-0625-N-D GCT Semiconductor 6W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-08-A-C-0-0625-N-D GCT Semiconductor 8W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF1000A Seiko Epson Surface Mount Crystal Oscillators Original PDF
    BF-1001 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, FOOT 1.57 X .35IN BLACK Original PDF
    BF100-10-A-C-0-0625-N-D GCT Semiconductor 10W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-12-A-C-0-0625-N-D GCT Semiconductor 12W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-14-A-C-0-0625-N-D GCT Semiconductor 14W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-16-A-C-0-0625-N-D GCT Semiconductor 16W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-18-A-C-0-0625-N-D GCT Semiconductor 18W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF-1002 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.18"CUSH DIA Original PDF
    BF100-20-A-C-0-0625-N-D GCT Semiconductor 20W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-22-A-C-0-0625-N-D GCT Semiconductor 22W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-24-A-C-0-0625-N-D GCT Semiconductor 24W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-26-A-C-0-0625-N-D GCT Semiconductor 26W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-28-A-C-0-0625-N-D GCT Semiconductor 28W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-30-A-C-0-0625-N-D GCT Semiconductor 30W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF-10032 Honeywell Sensing and Productivity Solutions Switches - Snap Action, Limit Switches - SWITCH PLAIN BEARING Original PDF
    BF100-32-A-C-0-0625-N-D GCT Semiconductor 32W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    ...

    BF10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 5 1 2 3 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值：2.0 AMP INSULATION RESISTANCE 绝缘电阻值：1000 MΩ Min.


    Original     		PDF BF105: BF105-001 BF105

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 Global Connector Technology Ltd. - BF100: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT 5 4 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 Ordering Grid CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MEGOHMS MIN. BF100 XX


    Original     		PDF BF100: BF100 20mOHMS 94-V0 BF100

    BF1005SR

    Abstract: BF1005 BF1005S BF1005SW
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW

    BF1005

    Abstract: VPS05178
    Text: BF1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178

    BF1009SR

    Abstract: No abstract text available
    Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 9V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR

    BF1009SW

    Abstract: No abstract text available
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW

    BF1005S

    Abstract: VPS05178
    Text: BF1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178

    BF1005SR

    Abstract: marking NZs
    Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1009SW

    Abstract: BF1009S BF1009SR BF1009W
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W

    Untitled

    Abstract: No abstract text available
    Text: 3 1 2 4 Global Connector Technology Ltd. - BF105: 2.0mm PITCH SOCKET, DUAL ROW, THROUGH HOLE, HORIZONTAL, SIDE ENTRY 5 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值： 2.0 AMPERE INSULATION RESISTANCE 绝缘电阻值： 1000M Ω Min.


    Original     		PDF BF105: 1000M 94-V0 I0250 BF105

    BF1009S

    Abstract: VPS05178
    Text: BF1009S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9V  Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178

    BF1009SW

    Abstract: marking g1s
    Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s

    BF1005

    Abstract: BF1005R BF1005W BFP181 BFP181R
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1009SW

    Abstract: BF1009 marking code g2s
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s

    Untitled

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. BF1005 BF1005R OT143 OT143R

    bf1012s

    Abstract: BF1012 VPS05178
    Text: BF1012S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 12V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178

    CRYDOM BF100

    Abstract: PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control PA100V-0-10V PA100 4-20ma ssr 100C
    Text: C3VZDDM BF100 and PA100 EUROPE SSR Control Modules Features: □ Burst Firing and Phase Angle control versions □ Directly mounted to SSR □ LED output indication □ Remote or local control BF100 Series modules are time proportional "Burst Firing" controllers for use with zero


    OCR Scan     		PDF BF100andPA100 BF100 400msecs PA100 4-20mA PA100V-0-10V BF100C-F3 200ms CRYDOM BF100 PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control 4-20ma ssr 100C

    Y3ES

    Abstract: BF1012 marking ag1 marking S98 BF1012W Marking kx Mosfet Silicon N Channel MOSFET Tetrode
    Text: S IE M E N S Prelim inary Data BF1012W SILICON N-CHANNEL MOSFET TETRODE • For low-noisa, gain-controlled inpul stages up tü 1 G H z • • O perating volt&ge 12 V Inlegrated bias Network 1 T yp e M ark in g O rd e rin g C o d e Pin C ä h fig u r a tiü i


    OCR Scan     		PDF BF1Q12W U62703-F1S OT343 BF1012W Y3ES BF1012 marking ag1 marking S98 Marking kx Mosfet Silicon N Channel MOSFET Tetrode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S


    OCR Scan     		PDF BF1012S Q62702-F1627 1012S T-143 200MHz

    siemens MOSFET 14

    Abstract: Marking G1s
    Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s

    GBF10M1

    Abstract: BF10K2 GLF05F1 CF10N 20-TAP
    Text: A Passive Surface-Mount Delay Lines Designed for automatic insertion. 10-Tap Chip-Carrier Passive Delay Line— V2 " Sq. Part No. Part No. Part No. BJF10D1Œ GBF1OD10D BJF10F1S BF10F1Œ BF10D1Œ BF10F1 Hi BJF10G1Œ BJF10K1 BF10G1Œ BF10K1 BJF10L1 BJF10M1


    OCR Scan     		PDF 10-Tap BJF10D1OE BJF10F1S) BJF10G1OE BJF10K1 BJF10L1 BJF10M1 GBF1OD10D GBF10F1OE GBF10G1OE GBF10M1 BF10K2 GLF05F1 CF10N 20-TAP

    DB1-822

    Abstract: BF1012
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627


    OCR Scan     		PDF BF1012S 1012S Q62702-F1627 OT-143 800MHz 1012S DB1-822 BF1012