Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BF 417 G TRANSISTOR Search Results

    BF 417 G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BF 417 G TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bf417

    Abstract: Bf 417 g transistor
    Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418


    Original
    PDF BF415 BF417 JO-126- CB-16 bf417 Bf 417 g transistor

    Untitled

    Abstract: No abstract text available
    Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417


    Original
    PDF BF416 BF418 -25mA) -250V -300V 70MHz O-126- CB-16

    marking sk sot-23

    Abstract: SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original
    PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 marking sk sot-23 SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ

    417 TRANSISTOR

    Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
    Text: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs


    OCR Scan
    PDF BF415 O-126- CB-16 417 TRANSISTOR BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417

    BF418

    Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video
    Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs


    OCR Scan
    PDF BF416 BF418 O-126- CB-16 BF418 BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video

    DIN125A

    Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
    Text: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:


    OCR Scan
    PDF T-33-17 DIN41869 DIN125A BF472S T0126 15A3DIN transistor bc 470 BF470S din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472

    BS170

    Abstract: CM250C MMBF170 B817 B8170 MOSFET bs170 Power mosfet transistor sot 16 sot 23 BS 170 sot-23 CODE BS
    Text: April 1 9 9 5 N BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent mode field effect transistors are produced using Nationals proprietary, high cell density, D M O S technology. These products have been designed to


    OCR Scan
    PDF BS170 MMBF170 500mA OT-23 CM250C B817 B8170 MOSFET bs170 Power mosfet transistor sot 16 sot 23 BS 170 sot-23 CODE BS

    bo 615

    Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
    Text: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297


    OCR Scan
    PDF 8F299 bo 615 ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126

    MMBT2369LT1

    Abstract: 236A T2369ALT1 mmbt2369alt1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon ‘ Motorola Preferred Device BASE MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage Rating VCEO 15 Vdc C ollecto r- Emitter Voltage VCES


    OCR Scan
    PDF MMBT2369LT1 MMBT2369ALT1* -236A BT2369LT1 BT2369ALT1 15mV/D to125 b3b7255 236A T2369ALT1 mmbt2369alt1

    bd 241a transistor

    Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
    Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A


    OCR Scan
    PDF T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11

    BFR92L

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F iaE D M A X I M U M R A T IN G S Sym bol V alu e U nit Collector-Emitter V oltage VCEO 15 Vdc Collector-Base V oltage VCBO 20 Vdc vebo 2.0 Vdc ic 25 m Adc Sym bol Max Unit PD 225 mW 1.8 mW/°C R» j a 556 °C/W pd 300 mW 2.4 mW/°C R ating


    OCR Scan
    PDF BFR92L 100iiA) BFR92L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCX70GLT1 BCX70JLT1 BCX70KLT1 General Purpose Transistors NPN Silicon COLLECTOR 3 % 2 EMITTER 2 M AXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itte r-B a se Voltage Symbol Value Unit


    OCR Scan
    PDF BCX70GLT1 BCX70JLT1 BCX70KLT1 OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: That H E W L E T T fttfC J P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade


    OCR Scan
    PDF Applic53

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan
    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    IC 4511

    Abstract: ci 4511 HCF4511BE 4511Be S1912 4511B1 IC 4511B pin cmos 4511 4511bf 4LC08
    Text: -T H O M S O N 07C D | 7=12^537 0014*172 b | COS/MOS INTEGRATED CIRCUIT ^ I a I HCC/HCF 4511B I I ' ' 4LC 0 8 9 8 6 S G S SE M IC O N D U C TO R CORP 7929225 0 J- .JT J- / 7 BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER • • • • • • • • • •


    OCR Scan
    PDF 4511B 4511B IC 4511 ci 4511 HCF4511BE 4511Be S1912 4511B1 IC 4511B pin cmos 4511 4511bf 4LC08

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan
    PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan
    PDF

    ci 4511

    Abstract: 4511 logic diagram 45118 hcf 45118 cmos 4511 4511B 4511 bd 4511B1 4511 4511 wm
    Text: S 6 S-THOMSON 07C D I 7=151237 O014«172 b I C O S /M O S IN TE G R A TE D C IR C U IT h c c /h c f «11 b . ' r . ' t _ _ 7929225 4LC 0 8 9 8 6 S G S SEMICONDUCTOR CORP •_ i -Of-SI.~/7 B C D -T O -S E V E N S E G M E N T L A T C H /D E C O D E R /D R IV E R


    OCR Scan
    PDF 7THT537 4511B Scia37 S-2176 ci 4511 4511 logic diagram 45118 hcf 45118 cmos 4511 4511B 4511 bd 4511B1 4511 4511 wm

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan
    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan
    PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan
    PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan
    PDF

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan
    PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    power supply 3com 2024

    Abstract: 1515N1 juki fg139
    Text: NJ U6 4 6 9 PRELIM INARY 12—C H A R A C T E R DOT 2-LIN E MATRIX LCD CONTROLLER • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJU6469 is a Dot Matrix LCD control Ier driver for 12-character 2-line with icon display in single chip. It contains voltage tripler, bleeder resistance, CR


    OCR Scan
    PDF 12--C NJU6469 12-character NJU6469 24-character power supply 3com 2024 1515N1 juki fg139