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    236A Search Results

    236A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8236ARMZ-R7 Analog Devices 40uA Micro Power In Amp Visit Analog Devices Buy
    LT1236AIS8-10#PBF Analog Devices Prec Ref Visit Analog Devices Buy
    LT1236AIS8-10#TRPBF Analog Devices Prec Ref Visit Analog Devices Buy
    AD8236ARMZ Analog Devices 40uA Micro Power In Amp Visit Analog Devices Buy
    AD8236ARMZ-RL Analog Devices 40uA Micro Power In Amp Visit Analog Devices Buy
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    236A Price and Stock

    Texas Instruments TMP236AQDBZRQ1

    LOW-POWER HIGH-ACCURACY ANALOG O
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    DigiKey TMP236AQDBZRQ1 Reel 9,000 3,000
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    TMP236AQDBZRQ1 Cut Tape 1,861 1
    • 1 $0.59
    • 10 $0.45
    • 100 $0.3183
    • 1000 $0.24215
    • 10000 $0.24215
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    Win Source Electronics TMP236AQDBZRQ1 47,430
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    • 1000 $0.218
    • 10000 $0.189
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    Torex Semiconductor LTD XC9236A33DMR-G

    IC REG BUCK 3.3V 600MA SOT25-5
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    DigiKey XC9236A33DMR-G Cut Tape 5,480 1
    • 1 $1.79
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    XC9236A33DMR-G Reel 3,000 3,000
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    Mouser Electronics XC9236A33DMR-G 3,480
    • 1 $1.65
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    • 100 $1.15
    • 1000 $0.799
    • 10000 $0.757
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    Newark XC9236A33DMR-G Cut Tape 899 1
    • 1 $1.54
    • 10 $1.38
    • 100 $1.04
    • 1000 $0.752
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    Avnet Silica XC9236A33DMR-G 17 Weeks 3,000
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    Texas Instruments TMP236A4DCKT

    SENSOR TEMPERATURE
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    DigiKey TMP236A4DCKT Reel 1,500 250
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    TMP236A4DCKT Cut Tape 65 1
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    • 100 $0.6675
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    RAF Electronic Hardware 1123-6-AL

    1/4 RD X 3/16 X .140 ID
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    DigiKey 1123-6-AL Bulk 461 1
    • 1 $0.62
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    Bisco Industries 1123-6-AL 57
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    Interstate Connecting Components 1123-6-AL 243
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    DB Roberts 1123-6-AL
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    Torex Semiconductor LTD XC9236A34CMR-G

    IC REG BUCK 3.4V 600MA SOT25
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    DigiKey XC9236A34CMR-G Cut Tape 100 1
    • 1 $1.79
    • 10 $1.606
    • 100 $1.2908
    • 1000 $0.8787
    • 10000 $0.8787
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    Avnet Americas XC9236A34CMR-G Reel 8 Weeks 3,000
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    Find more 236A price and stock on Findchips.com

    236A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD TRANSISTOR MARKING w7

    Abstract: No abstract text available
    Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV9115T O-236AB) PBHV8115T. AEC-Q101 PBHV9115T 771-PBHV9115T215 SMD TRANSISTOR MARKING w7

    sot023

    Abstract: No abstract text available
    Text: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to


    Original     		PDF O-236AB) 771-PESD5V0S2BT-T/R sot023

    pesd1can4

    Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
    Text: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines


    Original     		PDF O-236AB) 771-PESD1CAN-T/R pesd1can4 BV SMD SOT-023 PESD1CAN.215 PESD1CAN

    Untitled

    Abstract: No abstract text available
    Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002CK O-236AB) 2N7002CK 771-2N7002CK215

    88347

    Abstract: GSOT03C GSOT03 GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C
    Text: GSOT03 thru GSOT36C Vishay Semiconductors New Product formerly General Semiconductor Miniature Transient Voltage Suppressors Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)


    Original     		PDF GSOT03 GSOT36C O-236AB OT-23) OT-23 MIL-STD-750, 20-Jun-02 88347 GSOT03C GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C

    Untitled

    Abstract: No abstract text available
    Text: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com Item # 236ACX-2-240VAC, 236 Series - Adjustable Voltage Sensors 236 Series - Adjustable Voltage Sensors


    Original     		PDF 236ACX-2-240VAC, 500VDC SK-SQB11-DS

    Untitled

    Abstract: No abstract text available
    Text: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com Item # 236ABXP-020-115-125VDC, 236TD /237 Series - Time Delay Relays


    Original     		PDF 236ABXP-020-115-125VDC, 236TD 500VDC 27390D 33377D

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV31XN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV90EN O-236AB)

    smd code marking LF sot23

    Abstract: PESD36VS2UT
    Text: PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to


    Original     		PDF PESD36VS2UT O-236AB) AEC-Q101 PESD36VS2UT smd code marking LF sot23

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV28UN O-236AB)

    PMV40UN2

    Abstract: No abstract text available
    Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV40UN2 O-236AB) PMV40UN2

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV16UN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF O-236AB) PDTD143ET O-236AB PDTB143ET PDTD143XT PDTB143XT PDTD114ET PDTB114ET AEC-Q101

    1GM sot-23 transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
    Text: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)


    Original     		PDF MMBTA06 O-236AB OT-23) MMBTA56 100mA, 100mA 100MHz 20-Feb-02 1GM sot-23 transistor vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02

    88142

    Abstract: No abstract text available
    Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF BAT54 BAT54S O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 03-Jan-02 88142

    BCW72

    Abstract: No abstract text available
    Text: BCW71 and BCW72 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95)


    Original     		PDF BCW71 BCW72 O-236AB OT-23) BCW69 BCW70 BCW72

    2n4401 052

    Abstract: transistor 2n4401 equivalent TS36
    Text: MMBT4401 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.037 (0.95) 0.037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95)


    Original     		PDF MMBT4401 O-236AB OT-23) OT-23 E8/10K 2n4401 052 transistor 2n4401 equivalent TS36

    Untitled

    Abstract: No abstract text available
    Text: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D


    OCR Scan     		PDF TP2105 O-236AB* TP2105K1 OT-23:

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
    Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan     		PDF LND250 O-236AB* LND250K1 OT-23: OT-23. N-Channel Depletion-Mode MOSFET high voltage SOT-23 MARKING mn DW-200 NDE SOT23 MARKING

    marking AGs sot-23

    Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
    Text: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs


    OCR Scan     		PDF VN2106 VN2110 OT-23: VN2106N3 O-236AB* VN2106ND VN2110ND VN2110K1 OT-23. VN2106/VN2110 marking AGs sot-23 marking AGs sot23 ags marking n1a marking n1a sot23 marking code

    Untitled

    Abstract: No abstract text available
    Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*


    OCR Scan     		PDF LP0801 O-236AB* LP0801K1 0801N -150m -100m -200m 300jxs

    marking Z2

    Abstract: BZX84C5V1 BZX84C5V6
    Text: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)


    OCR Scan     		PDF OT-23/TO-236AB TMPZ5230 TMPZ5231 TMPZ5232 TMPZ5234 TMPZ5236 TMPZ5237 TMPZ5239 TMPZ5240 TMPZ5242 marking Z2 BZX84C5V1 BZX84C5V6

    PT3904

    Abstract: No abstract text available
    Text: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'


    OCR Scan     		PDF OT-23/TO-236AB PT2222A PT3904 TMPT4401 PT5089 PT6427 PTA06 PTA42 050H33Ã PT3904