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    BDT91 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT91 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT91 Magnatec Silicon Epitaxial Base Power Transistors Scan PDF
    BDT91 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT91 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT91 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT91 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT91 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT91 Unknown Transistor Replacements Scan PDF
    BDT91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT91 Unknown Transistor Replacements Scan PDF
    BDT91 Philips Semiconductors SILICON EPITAXIAL BASE POWER TRANSISTORS Scan PDF
    BDT91F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BDT91F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT91F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT91F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BDT91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT92

    Abstract: BDT91
    Text: SavantIC Semiconductor Product Specification BDT92 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter


    Original     		PDF BDT92 O-220C BDT91 BDT92 BDT91

    BDT93

    Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96


    Original     		PDF BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200

    BDT92

    Abstract: BDT91
    Text: Inchange Semiconductor Product Specification BDT92 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1


    Original     		PDF BDT92 O-220C BDT91 BDT92 BDT91

    BDT95

    Abstract: No abstract text available
    Text: ZPioducta., fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION • DC Current Gain- MFE= 20~200@ lc= 4A • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT91; SOV(Min)- BDT93;


    Original     		PDF BDT91/93/95 BDT91; BDT93; -BDT95 BDT92/94/96 O-220C BDT91 BDT93 500mA BDT95

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BDT95F

    Abstract: BDT91F BDT92F BDT93F BDT96F
    Text: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .


    OCR Scan     		PDF BDT91F; BDT93F BDT95F 711DflSb D04333D BDT92F, BDT94Fand BDT96F. BDT91F OT186. BDT95F BDT92F BDT96F

    BDT95

    Abstract: BDT96 BDT91 1346P pht 094 BDT93
    Text: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and


    OCR Scan     		PDF 05-DEC-1997 BDT91 BDT93 BDT95 8DT92, 8DT94 BDT96. BDT93 BDT95 BDT96 BDT91 1346P pht 094

    BDT94

    Abstract: BDT96 BDT93 SOT92 BDT91 BDT92 BDT95 IEC134
    Text: BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95. Q UICK REFERENCE D A T A


    OCR Scan     		PDF BDT92 BDT94 BDT96 BDT91, BDT93 BDT95. BDT94 D03M7AB BDT96 SOT92 BDT91 BDT92 BDT95 IEC134

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.

    BDT93

    Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT91 BDT93 711002b BDT95 BDT92 BDT96 3313

    BDT91F

    Abstract: BDT92F BDT94F BDT95F BDT96F BDT96
    Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. bdt92f DO3470S BDT91F BDT95F BDT96F BDT96

    bdt95a

    Abstract: BDT96 BDT93 BDT91 BDT92 BDT94 BDT95
    Text: \ M A G IN IA TEC BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P com plem ents are BDT92, BDT94 and BDT96.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 bdt95a BDT96 BDT91 BDT92 BDT95

    Untitled

    Abstract: No abstract text available
    Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOTl86 BDT91F, BDT93Fand BDT95F. BDT92F

    Untitled

    Abstract: No abstract text available
    Text: _ y v _ BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio output stages and general amplifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95.


    OCR Scan     		PDF BDT92 BDT94 BDT96 BDT91, BDT93 BDT95.

    BDT95

    Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94
    Text: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 Q3477M BDT95 BOT93 BDT96 BOT95 BDT91 BDT92

    T-33-O

    Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341
    Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F 711002b DQ4334G T-33-O inaSOT186 BDT91F, BDT93Fand BDT95F. T-33-O BDT91F BDT92F BDT95F BDT96F 043341

    BDT95

    Abstract: bdt93
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT91 BDT93 BDT95 711002t, 711005b 0QM33E7 BDT95

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F 003477b

    BDT91F

    Abstract: BDT92F BDT93F BDT95F BDT96F
    Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F

    2009-6F

    Abstract: No abstract text available
    Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. BDT92F 711Qfl5b T-33-09 2009-6F

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Transistor Equivalent list

    Abstract: J3 transistor by239 1500 100A101kp diode J3
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


    OCR Scan     		PDF LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3