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    100A101KP Price and Stock

    Kyocera AVX Components 100A101KP150XT1K

    CAP CER 100PF 150V P90 0505
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    DigiKey 100A101KP150XT1K Digi-Reel 1,367 1
    • 1 $2.24
    • 10 $1.469
    • 100 $1.0613
    • 1000 $1.0613
    • 10000 $1.0613
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    100A101KP150XT1K Cut Tape 1,367 1
    • 1 $2.24
    • 10 $1.469
    • 100 $1.0613
    • 1000 $1.0613
    • 10000 $1.0613
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    100A101KP150XT1K Reel 1,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.2127
    • 10000 $1.08566
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    Mouser Electronics 100A101KP150XT1K
    • 1 $3.43
    • 10 $2.63
    • 100 $2
    • 1000 $1.41
    • 10000 $1.31
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    Kyocera AVX Components 100A101KP150XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100A101KP150XC100
    • 1 $4.3
    • 10 $3.3
    • 100 $2.57
    • 1000 $1.87
    • 10000 $1.8
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    Richardson RFPD 100A101KP150XC100 200
    • 1 -
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    • 100 -
    • 1000 $1.3
    • 10000 $1.06
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    Kyocera AVX Components 100A101KPN150XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100A101KPN150XC100
    • 1 $4.51
    • 10 $3.47
    • 100 $2.67
    • 1000 $1.96
    • 10000 $1.89
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    Kyocera AVX Components 100A101KP150XTV

    Silicon RF Capacitors / Thin Film 150V 100pF Tol 10% Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100A101KP150XTV
    • 1 -
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    • 100 -
    • 1000 $1.54
    • 10000 $1.46
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    Kyocera AVX Components 100A101KP150XT

    Silicon RF Capacitors / Thin Film 100PF 150V 10% 0505
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    Mouser Electronics 100A101KP150XT
    • 1 -
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    • 100 -
    • 1000 $1.66
    • 10000 $1.66
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    TTI 100A101KP150XT Reel 500
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    • 1000 $2.48
    • 10000 $1.98
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    Richardson RFPD 100A101KP150XT 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.33
    • 10000 $1.08
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    Find more 100A101KP price and stock on Findchips.com

    100A101KP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100A101KP150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101KP150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF

    100A101KP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y

    MX0912B100Y

    Abstract: MZ0912B100Y philips capacitor 470
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y SCA53 127147/00/02/pp12 MX0912B100Y MZ0912B100Y philips capacitor 470

    BDT91

    Abstract: BY239 LLE15370X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE15370X SCA53 127147/00/02/pp12 BDT91 BY239 LLE15370X

    epsilam 10

    Abstract: BDT91 BY239 LFE15600X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X

    LLE16350X

    Abstract: BDT91 BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239

    MX0912B351Y

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A


    Original     		PDF MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y

    MX0912B251Y

    Abstract: capacitor 470 uF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A


    Original     		PDF MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N


    OCR Scan     		PDF MZ0912B100Y

    MF1011B900Y

    Abstract: SC15
    Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C


    OCR Scan     		PDF MF1011B900Y MLC725 OT448A. MF1011B900Y SC15

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


    OCR Scan     		PDF MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN

    Transistor Equivalent list

    Abstract: J3 transistor by239 1500 100A101kp diode J3
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


    OCR Scan     		PDF LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, 10% duty factor MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C


    OCR Scan     		PDF 100A101kp50x LC467 X1011B200Y

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF MX0912B100Y OT439A 100A101KP50X MX0912B100Y; MZ0912B100Y MGK067

    gk06

    Abstract: microwave transistor S- parameter GK066
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF OT439A 100A101KP50X MX0912B251Y GK066 gk06 microwave transistor S- parameter GK066

    ECUE1H220JCQ

    Abstract: irf9936 f9936 Design Considerations for BJT Active Mixers analog panasonic saw 0806 100A3R9CP150X ECU-E1H220JCQ PES 42065 RF9936 ECUE1E102KBQ
    Text: «M H! MICRO-DEVICES RF9936 PCS LOW NOISE AM PLIFIER/M IX ER T yp ical A p plicatio ns • C D M A /T D M A /D C S 1 9 0 0 P C S S ystem s G eneral Purpose Down C onverter • P H S 1 5 0 0 /W L A N 2 4 0 0 S ystem s Micro-Cell P C S B ase Stations • R eceivers Employing Diversity A ntennas


    OCR Scan     		PDF RF9936 CDMA/TDMA/DCS1900 1500/WLAN RF9936 RF9936PCBA 00GG74Ã DG0074R ECUE1H220JCQ irf9936 f9936 Design Considerations for BJT Active Mixers analog panasonic saw 0806 100A3R9CP150X ECU-E1H220JCQ PES 42065 ECUE1E102KBQ

    Untitled

    Abstract: No abstract text available
    Text: KFM RF9936 MICRO •DEVICES PCS LOW NOISE AMPLIFIER/MIXER Typical Applications • CDMA/TDMA/DCS1900 PCS Systems General Purpose Down Converter • PHS 1500/WLAN 2400 Systems Micro-Cell PCS Base Stations • Receivers Employing Diversity Antennas Portable Battery Powered Equipment


    OCR Scan     		PDF RF9936 CDMA/TDMA/DCS1900 1500/WLAN RF9936 100A3R9CP150X 100A102JP150X PSS100-3C 616DB-1078 F6CE-1G9600-L2XB 993S411

    Untitled

    Abstract: No abstract text available
    Text: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.


    OCR Scan     		PDF MX0912B350Y 00351Mb

    MCA680

    Abstract: electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier
    Text: MZ0912B50Y Data sheet status Preliminary specification data of Issue July 1990 NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting


    OCR Scan     		PDF MZ0912B50Y M90-1193/Y MCA680 electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier

    diode BY239

    Abstract: Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 100A101kp FO-231 NPN Silicon Epitaxial Planar Transistor A376
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X FEA TUR ES Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V SW R


    OCR Scan     		PDF LFE18500X 7110fl5b 0DT4307 FO-231. 711002b diode BY239 Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 100A101kp FO-231 NPN Silicon Epitaxial Planar Transistor A376

    erie 1500 z

    Abstract: BDT91 BY239 LFE15600X SC15 by239 1500
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


    OCR Scan     		PDF LFE15600X erie 1500 z BDT91 BY239 LFE15600X SC15 by239 1500

    bt 109 transistor

    Abstract: CD493 RA444
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 ns/10% • Internal input and output prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors


    OCR Scan     		PDF ns/10% MX1011B700Y CD493 bt 109 transistor CD493 RA444