Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BDT87F Search Results

    BDT87F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT87F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BDT87F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT87F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT87F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BDT87F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDT87F

    Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F


    Original
    BDT81F/83F/85F/87F BDT81F; BDT83F; BDT85F; BDT87F BDT82F/84F/86F/88F BDT81F BDT83F BDT87F NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536 PDF

    MAX2136

    Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
    Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.


    OCR Scan
    BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A


    OCR Scan
    BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31 PDF

    BDT88F

    Abstract: 36 TI BBL BDT86
    Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.


    OCR Scan
    BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS i n t e r n a t i o n a l 5 bE D • 7 1 1 0 fiSh G G 4 3 3 1 S bSi ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan
    BDT81F; BDT83F BDT85F; BDT87F PDF

    BDT81F

    Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F
    Text: BDT81F; BDT83F J l^BDT85F; BDT87F SILICON EPITAXIAL POWER TRANSISTORS N PN silicon epitaxial power transistors, each in a SO T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D T 8 2 F , B D T 8 4 F , B D T 8 6 F and BD T88F.


    OCR Scan
    BDT81F; BDT83F BDT85F; BDT87F OT186 BDT82F, BDT84F, BDT86F BDT88F. BDT81F BDT82F BDT84F BDT85F BDT87F BDT88F PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan
    BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan
    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan
    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan
    BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 PDF