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    BDT65A Search Results

    BDT65A Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BDT65A Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT65A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT65A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT65A Unknown SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT65A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT65A Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT65A Philips Semiconductors Silicon Darlington Power Transistors Scan PDF
    BDT65AF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT65AF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65AF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT65AF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF

    BDT65A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BDT65AF

    Abstract: Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDT64F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose


    Original     		PDF BDT64F/AF/BF/CF BDT65F BDT65BF BDT65AF BDT65CF BDT65AF Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F

    BOT65C

    Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F
    Text: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F OT186. BOT65C 65AF BDT64AF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF

    BDT65CF

    Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
    Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C

    Untitled

    Abstract: No abstract text available
    Text: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF OT186 BDT64F, BDT64AF, BDT64BF BDT64CF. bbS3T31

    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    philips BDV64A

    Abstract: BDX67
    Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)


    OCR Scan     		PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BDT64C

    Abstract: BOT64 BOT64B
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F BDT64C BOT64 BOT64B

    bot64

    Abstract: No abstract text available
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF BDT65F, BDT65AF, BDT65CF. BDT64F 003473b bot64

    BDT64AF

    Abstract: bdt64cr KIA 574 BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F
    Text: BDT64F; BDT64AF J BPT64BF; BDT64CF SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT658F BDT65CF. BDT64F BDT64AF bdt64cr KIA 574 BDT64BF BDT64CF BDT65AF BDT65CF BDT65F

    BDT64C

    Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
    Text: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,


    OCR Scan     		PDF BDT64; BDT64B; T0-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 BDT64F BDT64AF BDT64C BDT65 BDT65A BDT64A 7Z66 BDT64B BDT65C

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    bot64

    Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F
    Text: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.


    OCR Scan     		PDF BDT64F BDT64A BDT64BF BDT64C 7Z21455 bot64 BDT64A BDT64AF BDT64C BDT64CF