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    BCY42 Search Results

    BCY42 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY42 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BCY42 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY42 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BCY42 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCY42 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BCY42 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY42 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY42 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCY42 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY42 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BCY42 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BCY42P Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BCY42 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc461

    Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
    Text: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42


    OCR Scan     		0DGQ447 BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 bc461 BCY39A BCY87 T071 BCY89 BCY70 BS BCY34A BCY56 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56 PDF

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V PDF

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037 PDF

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 PDF

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025 PDF

    CV7753

    Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
    Text: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3


    OCR Scan     		ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 CV7753 ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent PDF

    transistor t2a 82

    Abstract: ZT1482 ZT1484 2N2223 t2a transistor ZT1490 n3055 2N3055 TRANSISTOR 2n3055 2N3440
    Text: SILICON TRANSISTORS High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.


    OCR Scan     		ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 transistor t2a 82 2N2223 t2a transistor n3055 TRANSISTOR 2n3055 PDF

    ZT1483

    Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 ZT1483 ZT1701 BCW23 ZT2120 2N2475 BCW21 BC108 PDF

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177 PDF

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177 PDF

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    N3053

    Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79 PDF

    BCY78

    Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 BCY79 PDF

    Transistor BC177

    Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177 PDF

    2N696

    Abstract: 2n706 BC178 BC107 bc107 complement 2N1131 2N1132 2N4037 2N697 BC177
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2n706 BC178 bc107 complement 2N1131 2N1132 2N4037 BC177 PDF

    BC337C

    Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC337C bc327c BC338C bc337b 2N1131 2N1132 2N4037 PDF