BCR108W
Abstract: VSO05561
Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR108W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR108W
VSO05561
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BCR108W
Abstract: VSO05561
Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR108W
VSO05561
EHA07184
OT323
Jul-16-2001
BCR108W
VSO05561
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Untitled
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
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BCR108.
BCR108S:
BCR108
BCR108W
BCR108S
EHA07184
EHA07174
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marking WHs
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package
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BCR108.
BCR108S:
BCR108
BCR108W
BCR108S
EHA07184
EHA07174
BCR108S
marking WHs
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BCR108
Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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BCR108.
BCR108S:
BCR108/F
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108S
BCR108W
BCW66
bcr1
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Untitled
Abstract: No abstract text available
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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BCR108.
BCR108S:
BCR108/F
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
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BCR108
Abstract: BCR108F BCR108L3 BCR108S SEMH10
Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR108.
/SEMH10
BCR108/F/L3
BCR108T/W
BCR108S
SEMH10
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108L3
BCR108S
SEMH10
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BCR108
Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR108.
BCR108/F/L3
BCR108T/W
BCR108S
EHA07174
EHA07184
BCR108
BCR108F
BCR108L3
BCR108
BCR108F
BCR108L3
BCR108S
BCR108T
BCR108W
bcr1
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BCR108
Abstract: BCR108F BCR108L3 BCR108S SEMH10
Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR108.
/SEMH10
BCR108/F/L3
BCR108T/W
BCR108S
SEMH10
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108L3
BCR108S
SEMH10
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BCR108
Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see
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BCR108.
BCR108S:
BCR108/F/L3
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108
BCR108F
BCR108L3
BCR108S
BCR108T
BCR108W
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marking WHS sot23
Abstract: transistor marking code whs
Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3
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BCR108.
BCR108S:
BCR108/F/L3
BCR108T/W
BCR108S
EHA07184
EHA07174
BCR108
BCR108F
BCR108L3
marking WHS sot23
transistor marking code whs
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Untitled
Abstract: No abstract text available
Text: BF799W NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type BF799W Marking LKs 1=B Pin Configuration 2=E 3=C VSO05561 Package SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage
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BF799W
VSO05561
OT323
Apr-15-2003
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Untitled
Abstract: No abstract text available
Text: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package Type Marking BF799W LKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings
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BF799W
OT323
AN077
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Untitled
Abstract: No abstract text available
Text: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package Type Marking BF799W LKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings
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BF799W
OT323
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DIN 6784
Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
Text: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN
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BC856W.
BC860W
BC846W,
BC847W,
BC848W
BC849W,
BC850W
VSO05561
BC856BW
OT323
DIN 6784
MARKING 3FS
BC857 st
BC846W
BC847W
BC848W
BC849W
BC850W
BC856BW
BC856W
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Untitled
Abstract: No abstract text available
Text: BFR193W NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFR193W
AEC-Q101
OT323
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BBY66
Abstract: BBY66-05 BBY66-05W BCR108W BCW66 E6327
Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W
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BBY66.
BBY66-05
BBY66-05W
BBY66-05W*
OT323
BBY66
BBY66-05
BBY66-05W
BCR108W
BCW66
E6327
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A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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BCR108W
Abstract: BF799W
Text: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type BF799W Marking LKs 1=B Pin Configuration 2=E
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BF799W
OT323
BCR108W
BF799W
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Untitled
Abstract: No abstract text available
Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W
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BBY66.
BBY66-05
BBY66-05W
OT323
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Untitled
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR92W
AEC-Q101
OT323
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AN077
Abstract: BCR108W BFR181W
Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR181W
OT323
AN077
BCR108W
BFR181W
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Untitled
Abstract: No abstract text available
Text: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR93AW
AEC-Q101
OT323
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BCR553
Abstract: BCR108W sot323 BCR133 SOT-23 cimax
Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W
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OCR Scan
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PDF
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10mA/5V
BCR108
BCR108W
BCR112
BCR116
BCR119
BCR133
BCR133W
BCR135
BCR135W
BCR553
BCR108W sot323
SOT-23
cimax
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