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    H11E Search Results

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    H11E Price and Stock

    Abracon Corporation ATXK-H11-E-32.768KHZ-E50-T3

    XTAL OSC TCXO 32.7680KHZ CMOS
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    DigiKey ATXK-H11-E-32.768KHZ-E50-T3 Cut Tape 2,560 1
    • 1 $3.7
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    ATXK-H11-E-32.768KHZ-E50-T3 Digi-Reel 2,560 1
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    • 10 $3.192
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    ATXK-H11-E-32.768KHZ-E50-T3 Reel 3,000
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    Avnet Americas ATXK-H11-E-32.768KHZ-E50-T3 Reel 18 Weeks 3,000
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    Newark ATXK-H11-E-32.768KHZ-E50-T3 Cut Tape 2,940 10
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    Chip1Stop ATXK-H11-E-32.768KHZ-E50-T3 2,778
    • 1 $2.75
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    • 100 $2.122
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    STMicroelectronics VN02H-11-E

    IC PWR DRVR N-CH 1:1 5PENTAWATT
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    DigiKey VN02H-11-E Tube
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    ROHM Semiconductor RPM841-H11E2

    IC IRDA IR COMMUNICATION MODULE
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    ROHM Semiconductor RPM841-H11E2A

    MODULE IRDA 115.2KBPS 7-SMD
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    Avnet Silica RPM841-H11E2A 13 Weeks 2,500
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    ROHM Semiconductor RPM973-H11E2A

    MODULE IRDA 4MBPS FIR COMPATBL S
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    H11E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


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    PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    1LS transistor

    Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


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    PDF Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 1LS transistor 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2

    S852T

    Abstract: S852TW
    Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


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    PDF S852T/S852TW S852T S852TW D-74025 20-Jan-99

    BCW60

    Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
    Text: BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration


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    PDF BCW60, BCX70 BCW61, BCX71 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW60 BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71

    BC846

    Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC846 BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860

    C1567

    Abstract: Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517
    Text: NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 PNP Type Marking Ordering Code


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    PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 C1567 Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    2222a

    Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
    Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


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    PDF Q68000-A6481 Q68000-A6473 OT-23 2222a npn 2222 2222 NPN br 2222 npn 2222 A 2222

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


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    PDF S852TF OT-490 18-Jul-08

    80C520

    Abstract: APC UPS CIRCUIT DIAGRAM diagnostic manual
    Text: DS80CH11 DS80CH11 System Energy Manager PRODUCT SPECIFICATION V2.1 011200 1/88 DS80CH11 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    PDF DS80CH11 DS80CH11 80C520 APC UPS CIRCUIT DIAGRAM diagnostic manual

    Untitled

    Abstract: No abstract text available
    Text: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1


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    PDF VPW09197 EHA07177 SC-74 EHP00365 EHP00364 EHP00368 EHP00369 Apr-22-1999

    telefunken IC 121

    Abstract: No abstract text available
    Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure


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    PDF D-74025 telefunken IC 121

    ic 3845

    Abstract: transistor IC 1557 b S822T 601 644 k 547 c 945 3268
    Text: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


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    PDF S822T 12the D-74025 18-Apr-96 ic 3845 transistor IC 1557 b S822T 601 644 k 547 c 945 3268

    NPN transistor mhz s-parameter

    Abstract: 945 TRANSISTOR S852T
    Text: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


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    PDF S852T 15the D-74025 18-Apr-96 NPN transistor mhz s-parameter 945 TRANSISTOR S852T

    CH3906VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906VGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


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    PDF CH3906VGP OT-563 OT-563) 200mA) OT-562 1N916 CH3906VGP

    CH3904VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904VGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


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    PDF CH3904VGP OT-563 OT-563) 200mA) 1N916 CH3904VGP

    S822T

    Abstract: S822TRW S822TW TRANSISTOR w22
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


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    PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 TRANSISTOR w22

    H12E

    Abstract: BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e
    Text: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


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    PDF BCV61 EHA00012 OT143 BCV61B BCV61C H12E BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


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    PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


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    PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


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    PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    bc 104 npn transistor

    Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


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    PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    BC847

    Abstract: BC857AT BC857BT BC857T SC75 VPS05996
    Text: BC857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B


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    PDF BC857T BC847. BC857AT BC857BT VPS05996 EHP00381 EHP00380 Nov-29-2001 EHP00382 BC847 BC857AT BC857BT BC857T SC75 VPS05996