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    BC262B Search Results

    BC262B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BC262B ITT Industries Misc. Data Book Scans 1975/76 Scan PDF
    BC262B ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BC262B Micro Electronics Semiconductor Devices Scan PDF
    BC262B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BC262B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC262B Unknown Transistor Replacements Scan PDF
    BC262B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC262B Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BC262B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BC262B Unknown Shortform Electronic Component Datasheets Short Form PDF
    BC262B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BC262B National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BC262B National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
    BC262B National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    BC262B Raytheon Selection Guide 1977 Scan PDF

    BC262B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC253C

    Abstract: BC253B 305900 BC251B 2N3963 BC213L BC214 BC214KC BC251A BC252A
    Text: ITT Semiconductors PNP Transistors P N P Sm all Sign a l Silico n Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.


    OCR Scan     		PDF BC107/8C171 300mW BC251A 31230C BC251B 1231A BC252A 31232X BC252B 31233H BC253C BC253B 305900 2N3963 BC213L BC214 BC214KC

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


    OCR Scan     		PDF DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    2N2894 FAIRCHILD SEMICONDUCTOR

    Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S


    OCR Scan     		PDF BSX29 35322H 2N2894 35323F N2894A 35324D 2N3209 35325B 2N5023 35326X 2N2894 FAIRCHILD SEMICONDUCTOR BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt

    Bc238B, NPN

    Abstract: BC250C BC260 BC260B Bc300
    Text: 37E D SEMELAB LTD ^ Type No. Reliability Polarity Option Package v CEO •c cont 6133187 0000D33 b « S M L B < -^i¿¿'^rá’aiiwiiiv ’ V 'niiii“ij^tirilnr hFE@ Vc e /Ic H PD BC238B BC238C BC239 BC239B BC239C NPN NPN NPN NPN NPN T092 T092 T092 T092 T092


    OCR Scan     		PDF 0000D33 330typ 600typ 120min 170typ 290typ 500typ 500max Bc238B, NPN BC250C BC260 BC260B Bc300

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


    OCR Scan     		PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22

    BC261

    Abstract: BC261B BC261A BC262 BC262A BC263 BC263A
    Text: BC261 PNP HIGH GAIN, EPITAXIAL PLANAR SILICON : K , ' 4 % £ c GENERAL DESCRIPTION : The BC261, BC262 and BC263 are s ilic o n p lan ar e p it a x ia l tra n sisto rs. The BC261 i s i n t e n d e d f o r au d io a m p l i f i e r d r i v e r s t a g e . The BC262 i s i n t e n d e d f o r


    OCR Scan     		PDF BC261 BC261, BC262 BC263 360mW -200mA BC261B BC261A BC262A BC263A

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    EQUIVALENT TRANSISTOR bc109c

    Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent

    bc267

    Abstract: BC267B bc238c BC250C BC267A BC238B BC238B npn Bc238B, NPN BC250 BC250B
    Text: E3SEMELABE2S2Sa TVpe No. Reliability 2?!!«*?^ Polaritv Polarity Option Packane v Vr>cr\ Package CEO >c cont hi->hF E @ V c e /'C h PD BC238B BC238C BC239 BC239B BC239C NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 20 20 20 20 20 0.1 0.1 0.1 0.1 0.1 330typ


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    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    BC140 equivalent

    Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18


    OCR Scan     		PDF BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


    OCR Scan     		PDF tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367