BC 158 TRANSISTOR Search Results

BC 158 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

BC 158 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR BC 208 Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2	OCR Scan	lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187	PDF
TRANSISTOR BC 173 Abstract: transistor BC 327-25 Text: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 83633^4 00QQQ1S ft ■ JL COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias 1C VCE ICM _Volts Volts Volts_ mA Volts mA Device_ min min min_ min/max_	OCR Scan	00QQQ1S lo-32 TRANSISTOR BC 173 transistor BC 327-25	PDF
transistor BC 157 Abstract: TRANSISTOR BC 158 TRANSISTOR BC 158 pnp PNP 157A bc 106 transistor BC 158 is npn or pnp BC 327/25 transistor BC 557 npn transistor bc 558 pnp transistor bc 325 Text: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 23fl3314 OdOOOlS fl ■ JZ . COMMERCIAL/ENTERTAINMENT APPLICATIONS s VCEO VCBO VEBO _Volts Device_ min 1C VCE Volts Volts_ mA Volts min hFE at bias min_ min/max_	OCR Scan	O-237 transistor BC 157 TRANSISTOR BC 158 TRANSISTOR BC 158 pnp PNP 157A bc 106 transistor BC 158 is npn or pnp BC 327/25 transistor BC 557 npn transistor bc 558 pnp transistor bc 325	PDF
PA66-GF25 Abstract: pbt-gf30 wiring diagram Wiring Diagram pa66-gf25 PBT-GF30 PA66 GF25 BC10-S30-Y0X M2601091 pbt-gf30 radio BC20-CP40-FZ3X2 turck 8 pin m12 connector Text: Capacitive Sensors Sensing All Materials All the Time! What’s New in TURCK’s Line of Capacitives QF5.5 This is the new flat style capacitive sensor from TURCK. This sensor is small in size, but long on range. It measures only 5.5 millimeters in width and has an	Original	1-800-544-PROX B0149 PA66-GF25 pbt-gf30 wiring diagram Wiring Diagram pa66-gf25 PBT-GF30 PA66 GF25 BC10-S30-Y0X M2601091 pbt-gf30 radio BC20-CP40-FZ3X2 turck 8 pin m12 connector	PDF
transistor vergleichsliste Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G	OCR Scan		PDF
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p	PDF
NF 847 G Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W	OCR Scan	858/W 857/W IQ62702-C1847 Q62702-C954 62702-C1884 Q62702-C1850 Q62702-C1742 Q62702-F1393 Q62702-F1394 Q62703-F97 NF 847 G NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X	PDF
BCX33 Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85 Text: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT	OCR Scan	BC337 BC338 BCX31 OT-25 BCX32 BCX33 BCX34 BFX84 BFX85 h--22-> BCX33 BCX32 BCX34 BFQ36 2N1711 Data Sheet BC338 BFX85	PDF
BC557A Abstract: BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B 226AA) BC558 BC558ZL1 O-226) \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B	PDF
Transistor BFR 96 Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237 Text: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures	OCR Scan	ft-11 569-GS 000s154 hal66 if-11 Transistor BFR 96 TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237	PDF
cqx 87 Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157	OCR Scan	AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175	PDF
TRANSISTOR BC 157 Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34 Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34	PDF
transistors BC 543 Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5	PDF
S4 78a DIODE schottky Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92	PDF

2907A PNP bipolar transistors Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846	PDF
half adder ic number Abstract: 74S95 binary multiplier by repeated addition 74s657 ic number of half adder 74S958 558s 8x8 bit binary multiplier where we used half adder circuit with circuit diagram S2316 Text: 8x8 High Speed Schottky M ultipliers SN54/74S557 SN54/74S558 Featu res/ Benefits • Industry-standard • Multiplies two 8 x8 8 -bit multiplier numbers; gives 16-bit result • Cascadable; 56x56 fully-parallel multiplication uses only 34 multipliers for the most-significant half of the product	OCR Scan	SN54/74S557 SN54/74S558 54S557, 54S558 16-bit 74S557, 74S558 56x56 16x16-bit half adder ic number 74S95 binary multiplier by repeated addition 74s657 ic number of half adder 74S958 558s 8x8 bit binary multiplier where we used half adder circuit with circuit diagram S2316	PDF
APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700	PDF
2907A PNP bipolar transistors Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT	PDF
1.0 k mef 250 Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a	OCR Scan	semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072	PDF
SL 100 NPN Transistor base emitter collector Abstract: KSC5022 KSC5020 KSC5021 KSC5023 vbe 10v, vce 500v NPN Transistor js 206a MC 331 transistor C-03A transistor high voltage Text: SAMSUNG SEMICONDUCTOR INC IME KSC5020 D \| 7^4142 00Q?S02 b NPN SILICON TRANSISTOR T - 3 3 -/ / HIGH VOLTAGE, HIGH QUALITY HIGH SPPED SWITCHING: t,=0.1fS • W IDE SO A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSC5020 SL 100 NPN Transistor base emitter collector KSC5022 KSC5020 KSC5021 KSC5023 vbe 10v, vce 500v NPN Transistor js 206a MC 331 transistor C-03A transistor high voltage	PDF
TL074M Abstract: No abstract text available Text: TL074 TL074A -TL074B f Z T S G S -T H O M S O N ^7# LOW NOISE J-FET INPUT QUAD OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE Vn = 18 nV hi Hz typ ■ OUTPUT SHORT-CIRCUIT PROTECTION	OCR Scan	TL074 TL074A -TL074B LCC20 CERDIP14 TL074, TL074B E88TL074-21 E88TL074-23 TL074M	PDF
MJ 15007 transistor Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz	OCR Scan	NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent	PDF
AC128 transistor Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187 Text: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features	OCR Scan	at25PC AC128 AC187 AC188 2N1303 2N1306 2N1307 2N1309 h--22-> crt6-25 AC128 transistor bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188	PDF
Untitled Abstract: No abstract text available Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR ISO-9001 ^Registered/ Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic RGT SERIES Heat conducting ceramic substrate Digital marking High conductivity plate-on	OCR Scan	ISO-9001 C/R125Â	PDF

BC 158 TRANSISTOR Search Results

BC 158 TRANSISTOR Result Highlights (5)

BC 158 TRANSISTOR Datasheets Context Search

TRANSISTOR BC 208

TRANSISTOR BC 173

transistor BC 157

PA66-GF25

transistor vergleichsliste

triac zd 607

NF 847 G

BCX33

BC557A

Transistor BFR 96

cqx 87

TRANSISTOR BC 157

transistors BC 543

S4 78a DIODE schottky

2907A PNP bipolar transistors

half adder ic number

APC UPS CIRCUIT DIAGRAM rs 1500

2907A PNP bipolar transistors

1.0 k mef 250

SL 100 NPN Transistor base emitter collector

TL074M

MJ 15007 transistor

AC128 transistor

Untitled