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    BC 149 TRANSISTOR Search Results

    BC 149 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 149 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 PDF

    bc 147 transistor

    Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
    Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits


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    0Q0D014 O-106 O-237 bc 147 transistor transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b PDF

    Transistor NPN BC 549B

    Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
    Text: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ


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    0Q0D014 O-106 O-237 0000G3D Transistor NPN BC 549B transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor PDF

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor PDF

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157 PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    BC550

    Abstract: bc549 equivalent
    Text: N AMER PHILIPS/DISCRETE LTE D • t b S 3^131 00275bb 7ST IAPX B U 54y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.


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    00275bb BC550 BC549 0D27S71 DD27573 BC550 bc549 equivalent PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60 PDF

    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung PDF

    2sc3044a

    Abstract: 2SC3044
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC3044, 2SC3044A Silicon High Speed Power Transistor DESCRIPTION The 2 S C 3 0 4 4 /2 S C 3 0 4 4 A s w itc h in g tra n s is to rs a re s ilic o n fa b r ic a t e d w it h NPN p la n a r g e n e ra l p u rp o s e , h ig h


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    2SC3044, 2SC3044A 2sc3044a 2SC3044 PDF

    lte4002s

    Abstract: D 1398 Transistor
    Text: 1 N AMER PHILIPS/DISCRETE • ObE D DEVELO PM ENT DATA bb53131 ODlMTSa b ■ LTE4002S T his data sheet contains advance information and specifications are subject to change w ithout notice. ! 3 M IC R O W A V E LINEAR P O W ER T R A N S IS T O R N-P-N silicon transistor for use in common-emitter class-A linear amplifiers up to 4 G H Z.


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    bb53131 LTE4002S LTE4002S T-31-23 D 1398 Transistor PDF

    transistor t4B

    Abstract: service-mitteilungen TRANSISTOR BC 109 transistor BC 238 Stassfurt VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen Service Mitteilungen bc 201 transistor transistor BC
    Text: SERVICE-MITTEILUNGEN V E B IN D U STRIEVERTRIEB RU N D FU N K UND F E R N SE H E N r a d io -television AUSGABE: 10/72 DATUM: H ov. <1972 Technische Hinweise für die Abfassung von Zuarbeiten zu den SERVICE - MITTEILUNGEN Wir bitten alle Interessenten, die unser Mitteilungsblatt für In­


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    Te1-041-1 178p/AC uF/10 201/SY transistor t4B service-mitteilungen TRANSISTOR BC 109 transistor BC 238 Stassfurt VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen Service Mitteilungen bc 201 transistor transistor BC PDF

    ceramic capacitor 39 pf

    Abstract: AEA213 MEA208 IEC134
    Text: Philips Sem iconduct o r s P H IL IP S 7 1 1 0 fl5 b IN T E R N A T IO N A L □ □ b 5 b ^ ^ ^ ^ T ^ ^ ^ ^ n N ^ ^ r o d u c t^ s p e c ific a tiO T bSE D UHF power transistor FEATURES Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures


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    7110flgb BLU10/12 OT122 -SOT122A MEA208 ceramic capacitor 39 pf AEA213 MEA208 IEC134 PDF

    BL-5j

    Abstract: No abstract text available
    Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2


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    200mA) 2SK2731 SC-59 BL-5j PDF

    transistor c331

    Abstract: scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332
    Text: BCW 60 BCX 70 IMPN-Transistoren für NF-Vorstufen und Schalteranwendung BCW 60 und BCX 70 sind epitaktische NPN-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SO T-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 60 und


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    OT-23) Q62702- -C331 -C332 -C333 -C334 61v-4 transistor c331 scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332 PDF

    Untitled

    Abstract: No abstract text available
    Text: /ITSCS-THOMSON TL072 TL072A-TL072B Ä T# LOW NOISE J-FET INPUT DUAL OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE Vn = 18 nV hi Hz typ . OUTPUT SHORT-CIRCUIT PROTECTION


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    TL072 TL072A-TL072B LCC20 TL072, TL072A TL072B Gain-of-10 E88TL072-18 TL072-TL072A-TL072B PDF

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


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    NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent PDF

    tl0721

    Abstract: ci tl072 TL072 PIN DIAGRAM transistor BC 147 bc 147 transistor TL072M TL072C TL072-TL072A-TL072B tl072 equivalent TL072A
    Text: TL072 TL072A-TL072B SGS-THOMSON ¿ 5 7 ^ D g ^ @ [l[L [i(g lT ^ R !]D O i LOW NOISE J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT LOW NOISE Vn = 1 8 nV N Hz (typ OUTPUT SHORT-CIRCUIT PROTECTION


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    TL072 TL072A-TL072B LCC20 TL072, TL072A TL072B TL072-TL072A-TL072B tl0721 ci tl072 TL072 PIN DIAGRAM transistor BC 147 bc 147 transistor TL072M TL072C TL072-TL072A-TL072B tl072 equivalent PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    service-mitteilungen

    Abstract: servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN magdeburg BC149C GER-A Service Mitteilungen 4 WG 130 "service-mitteilungen" scans-048
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN r a d i o -television NEUE AUSGABE: 10/73 DATUM: August 1973 I M P O R T - G E R Ä T E " VEF 206 " - ein Kofferempfänger mit 8 Wellenbereichen aus der SU Der Kofferempfänger "VEF 206" emp­


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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