Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.
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bb53c
BU508A
BU508D
OT93A
BU508D
7Z88402
7Z8S40-
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Untitled
Abstract: No abstract text available
Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.
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bb53c
BAS16
BAW62;
7Z65148
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BUZ24
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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bb53c
BUZ24
bbS3T31
Q014bD2
T-39-13
BUZ24_
0D14b03
BUZ24
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BFG540
Abstract: transistor N43
Text: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency
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bb53c
0D25011
BFG540;
BFG540/X;
BFG540/XR
BFG540
MATV/CAT155
BFG540
transistor N43
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BTY79-400R
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to
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00S73A3
BTY79-400R
1000R.
BTY79-400R
1000R
DD273aT
bb53T31
BTY79
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan
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D03bb70
BYV96D
BYV96E
D02bb7b
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Untitled
Abstract: No abstract text available
Text: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio
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0110b
00355CH
DD3SS11
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
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BLU97
OT122A)
bb53T31
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MR25 resistors
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b*lE D • APX bb53T31 DQ2flfllb AbM BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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bb53T31
BLU20/12
OT-119)
D02fifl53
MR25 resistors
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CECC50 005
Abstract: CECC50 005-005 BZX55 CECC50 005 005 c2v4 c2v7 c47 surge c3v3
Text: N AMER PHILIPS/DISCRETE _ bTE D • J bbSB'lBl 002bflQ2 4^S ■ APX bZX55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V
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002bflG2
DO-35
DO-35
OD-27)
7Z59230
CECC50 005
CECC50 005-005
BZX55
CECC50 005 005
c2v4
c2v7
c47 surge
c3v3
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
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BU2525A
bb53cl31
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Untitled
Abstract: No abstract text available
Text: rr N AMER PHILIPS/DISCRETE bbS3T31 Q01S72S 2 5SE D BUS13 BUS13A y v T-32-/SSILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bbS3T31
Q01S72S
BUS13
BUS13A
T-32-/SSILICON
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » bbS3^3]> 0037301 R31 « A P X BT151 SERIES J V THYRISTORS Glass-passivated thyristors in TO-220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications include
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BT151
O-220AB
BT151-500R
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J> td3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO220 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.
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BUT12
BUT12A
bb53c
00Efl4S3
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