SOT-23 a1p
Abstract: marking ALP BAW56 BAW62 diode Rl 257
Text: • I b b sa^ ai DDEMaTl 371 « a p x N AMER PHILIP S/DISCRETE BAW56 b7E D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW 56 consists o f tw o diodes in a m icro m in ia tu re plastic envelope. The anodes are com m oned and th e u n it is intended fo r high-speed sw itch in g in th ic k and th in -film circuits.
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BAW56
BAW56
SOT-23 a1p
marking ALP
BAW62
diode Rl 257
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oscilloscope pc
Abstract: BAS28 BAW62
Text: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.
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bbS3S31
0Q24B7Ã
BAS28
BAS28
oscilloscope pc
BAW62
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Untitled
Abstract: No abstract text available
Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.
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bb53c
BAS16
BAW62;
7Z65148
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a1p diode
Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot
Text: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.
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BAW56
a1p diode
BAW62 SOT23
7Z65148
BAW62
12p sot-23
a1p sot
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