IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

Contextual Info: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA

CE 65 M

Contextual Info: • bbS3T31 0054714 441 ■ APX N A PIER PHILIPS/DISCRETE b?E D BF840 BF841 SILICON PLANAR TRANSISTORS N-P-N transistors in a plastic SOT-23 envelope. Primarily intended for a.m. mixers and i.f. amplifiers in a.m./f.m. receivers using SMD technology. QUICK REFERENCE DATA

marking code 6Cp

Abstract: code marking 6Cp sot-23 BC817B 817b
Contextual Info: J B C 817 B C 818 K. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f audio amplifiers in thick and thin -film hybrid circuits. P-N-P complements are BC807; R and BC808; R respectively.

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

71009 SB

Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
Contextual Info: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an

Contextual Info: Philips Semiconductors D a ta s h e e t s ta tu s Product specification d a te o f Is s u e September 1994 Silicon epitaxial transistors QUICK REFERENCE DATA DESCRIPTION NPN transistors in a microminiature plastic package intended for surface mounted SMD

1b33

Abstract: BSV52
Contextual Info: 711002b 0Db^b33 37b • P HI N BSV52 SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrom iniature plastic envelope. It is intended fo r very high-speed saturated switching in th ick and th in -film circuits. Q U IC K REFERENCE D A T A

BC850C

Abstract: NB SOT-23 NPN BC849 BC849B BC849C BC850 BC850B BC850C equivalent
Contextual Info: 7110ÖPb 00bö42fl 2ST • P H I N BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage V gg = 0 V CES max. 30 50 V Collector-emitter voltage (open base)

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

smd transistor xf

Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
Contextual Info: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA

1117 S Transistor

Abstract: sot122f
Contextual Info: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

A 673 C2 transistor

Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Contextual Info: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.

Contextual Info: • bbS3^3i ooesa'ii a?3 * apx N AMER PHILIPS/DISCRETE b7E » PMBTA42 PMBTA43 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended fo r surface mounted applica­ tions. They are primarily intended for use in telephony and professional communication equipment.

eempl transformer

Abstract: Globespan Alcatel TH alcatel lucent datasheet BB011 MTK-20140 AD20MSP930 EL-1501 G7000 MTK-20131
Contextual Info: E & E Magnetic Products Limited ADSL Chipset / Transformer Cross Reference Table Chipset Manufacturer Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Alcatel Analog Devices Analog Devices Analog Devices Analog Devices Analog Devices

Contextual Info: • bb53^31 002444b EOT * A P X N AUER PHILIPS/DISCRETE b?E B C 817 B C 818 D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

MA550

Contextual Info: BCF81 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a m ic ro m in ia tu re plastic package, intended fo r low level, lo w noise general purpose applications in th ic k and th in -film circuits. Q U IC K R EFE R E N C E D A T A