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    BSV52 Price and Stock

    onsemi BSV52LT1G

    TRANS NPN 12V 0.1A SOT23-3
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    DigiKey BSV52LT1G Cut Tape 14,388 1
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    BSV52LT1G Digi-Reel 14,388 1
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    BSV52LT1G Reel 12,000 3,000
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    Avnet Americas BSV52LT1G Ammo Pack 16 Weeks, 4 Days 1
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    BSV52LT1G Reel 10 Weeks 18,000
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    Mouser Electronics BSV52LT1G 15,675
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    Newark BSV52LT1G Reel 6,000
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    RS BSV52LT1G Bulk 100
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    Bristol Electronics BSV52LT1G 595 23
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    Quest Components BSV52LT1G 476
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    Rochester Electronics BSV52LT1G 49,290 1
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    TME BSV52LT1G 164 1
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    ComSIT USA BSV52LT1G 2,490
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    Avnet Silica BSV52LT1G 18,000 11 Weeks 3,000
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    EBV Elektronik BSV52LT1G 60,000 12 Weeks 3,000
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    Flip Electronics BSV52LT1G 2,835
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    Master Electronics BSV52LT1G 3,000
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    New Advantage Corporation BSV52LT1G 6,000 1
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    Nexperia BSV52,215

    TRANS NPN 12V 0.1A TO236AB
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    DigiKey BSV52,215 Digi-Reel 5,264 1
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    BSV52,215 Cut Tape 5,264 1
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    BSV52,215 Reel 3,000 3,000
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    Mouser Electronics BSV52,215 6,855
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    Newark BSV52,215 Cut Tape 2,104 5
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    BSV52,215 Reel 3,000
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    Rochester Electronics BSV52,215 2,950 1
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    TTI BSV52,215 Reel 9,000
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    TME BSV52,215 2,275 1
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    Avnet Silica BSV52,215 15,000 10 Weeks 3,000
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    EBV Elektronik BSV52,215 15,000 10 Weeks 3,000
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    New Advantage Corporation BSV52,215 78,000 1
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    onsemi BSV52

    TRANS NPN 12V 0.2A SOT23-3
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    BSV52 Digi-Reel 1
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    onsemi BSV52LT1

    TRANS NPN 12V 0.1A SOT23-3
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    DigiKey BSV52LT1 Reel 12,000
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    Rochester Electronics BSV52LT1 14,940 1
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    ComSIT USA BSV52LT1 1,568
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    Rochester Electronics LLC BSV52LT1

    TRANS NPN 12V 0.1A SOT23-3
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    DigiKey BSV52LT1 Bulk 6,662
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    BSV52 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSV52 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BSV52 Fairchild Semiconductor NPN Switching Transistor Original PDF
    BSV52 Kexin NPN Switching Transistor Original PDF
    BSV52 NXP Semiconductors BSV52 - NPN switching transistor - fT min: 500 MHz; hFE max: 120 ; hFE min: 40 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; toff: 30 ns; VCEO max: 12 V Original PDF
    BSV52 Philips Semiconductors NPN switching transistor Original PDF
    BSV52 STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original PDF
    BSV52 TY Semiconductor NPN Switching Transistor - SOT-23 Original PDF
    BSV52 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    BSV52 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BSV52 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
    BSV52 Motorola European Master Selection Guide 1986 Scan PDF
    BSV52 Motorola NPN silicon switching transistor. Scan PDF
    BSV52 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSV52 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSV52 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSV52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSV52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSV52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSV52 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSV52 National Semiconductor Bipolar Pro Electron Series Scan PDF

    BSV52 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSV52

    Abstract: HIGH SPEED SWITCHING NPN SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 14 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA


    Original
    M3D088 BSV52 MAM255 SCA76 R75/04/pp7 BSV52 HIGH SPEED SWITCHING NPN SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BSV52 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 12 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original
    BSV52 OT-23 PDF

    BSV52

    Abstract: 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413
    Text: BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BSV52 B2 SO2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS.


    Original
    BSV52 SO2369/SO2369A SO2369 OT-23 SO2369/A BSV52 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSV52LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage


    Original
    BSV52LT1G BSV52LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    BSV52 OT-23 PDF

    smd transistor b2

    Abstract: BSV52 SMD transistor MARKING 14
    Text: Transistors IC SMD Type NPN Switching Transistor BSV52 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 12 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original
    BSV52 OT-23 smd transistor b2 BSV52 SMD transistor MARKING 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor BSV52LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc IC 100 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic


    Original
    BSV52LT1 236AB) PDF

    marking code transistors BSV52

    Abstract: BP317 BSV52 HIGH SPEED SWITCHING NPN SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor Product specification Supersedes data of 1997 May 07 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA


    Original
    M3D088 BSV52 MAM255 SCA63 115002/00/03/pp8 marking code transistors BSV52 BP317 BSV52 HIGH SPEED SWITCHING NPN SOT23 PDF

    BSV52

    Abstract: SOT23 BSV52 mark B1 sot23
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    BSV52 OT-23 BSV52 SOT23 BSV52 mark B1 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage


    Original
    BSV52LT1 236AB) PDF

    BSV52LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage


    Original
    BSV52LT1/D BSV52LT1 236AB) BSV52LT1/D* BSV52LT1 PDF

    kn sot23

    Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
    Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices


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    BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >


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    BSV52 BSV52 BSV52R 100MHz DS201 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BSV52 NPN switching transistor Product specification Supersedes data of 1997 May 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING


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    BSV52 BSV52 115002/00/03/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSV52 P AR T O BSO LETE HIGH SPEED SWITCHING TRANSISTOR P AR TM AR KIN G DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e SYM BO L VALUE UNIT V CBO 20 V V CES 20 V C olle cto r-E m itte r V oltag e


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    BSV52 BSV52R BSV52 PDF

    B558

    Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
    Text: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts


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    OT-23 BSS79B BSS79C FMMT2222A FMMT4400 FMMT4401 BSS66 BSS67 FMMT3903 FMMT3904 B558 B55123 BSS84A ZVN3310F ZVN4206E FMMT2222 PDF

    1b33

    Abstract: BSV52
    Text: 711002b 0Db^b33 37b • P HI N BSV52 SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrom iniature plastic envelope. It is intended fo r very high-speed saturated switching in th ick and th in -film circuits. Q U IC K REFERENCE D A T A


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    711002b BSV52 1b33 BSV52 PDF

    bsv52

    Abstract: No abstract text available
    Text: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


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    BSV52 S02369/S02369A S02369 S02369A OT-23 S02369/A 007fl07b BSV52/S02369/S02369A bsv52 PDF

    BSV52

    Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201
    Text: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e


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    BSV52 BSV52R BSV52 100MHz DS201 HIGH SPEED SWITCHING NPN SOT23 PDF

    BSV52L

    Abstract: No abstract text available
    Text: 1EE D M A X IM U M RATINGS * Value U nit VCEO 12 Vdc VCBO 20 Vdc ic 100 mAdc Symbol Rating Coliector-Emitter Voltage Collector-Base Voltage Collector Current — Continuous h I b3fc.7Z5M 0 0 f l 5 ^ M 5 MOTOROLA SC XSTRS/R BSV52L Characteristic Symbol Max


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    BSV52L BSV52L PDF

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc ic 100 mAdc Collector Current — Continuous BSV52LT1 C A SE 318-07, STYLE 6 SOT-23 TO-236AB T HERM AL CHARACTERISTICS Characteristic Symbol


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    BSV52LT1 OT-23 O-236AB) PDF

    Small Signal MOSFETs

    Abstract: FMMT3903 BSS1385 BSS84A BSS66 BSS67 BSS79B BSS79C FMMT2222 FMMT2222A
    Text: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts


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    OT-23 BSS79B BSS79C FMMT2222A FMMT4400 FMMT4401 BSS66 BSS67 FMMT3903 FMMT3904 Small Signal MOSFETs BSS1385 BSS84A FMMT2222 PDF

    BSV52

    Abstract: HIGH SPEED SWITCHING NPN SOT23 switching transistor sot23 marking JR marking rh transistor
    Text: Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 12 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High speed saturated switching applications, especially


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    BSV52 BSV52 HIGH SPEED SWITCHING NPN SOT23 switching transistor sot23 marking JR marking rh transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 12 Vdc Collector-B ase Voltage VCBO 20 Vdc 'c 100 m A dc Rating C o lle ctor C u rrent — C o n tin u o u s BSV52LT1 CASE 318-07, STYLE 6 SOT-23 T0-236AB THERMAL CHARACTERISTICS


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    BSV52LT1 OT-23 T0-236AB) PDF