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    BAV 27 V Search Results

    BAV 27 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TVS2700DRVR Texas Instruments 27V flat-clamp surge protection device 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS61080DRCR Texas Instruments 27V, 500mA switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61080DRCT Texas Instruments 27V, 500mA switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61081DRCT Texas Instruments 27V, 1.2A switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61081DRCR Texas Instruments 27V, 1.2A switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
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    BAV 27 V Price and Stock

    Diodes Incorporated BAV16S92-7

    Small Signal Switching Diodes 100V 75Vrrm 53Vr 200mA Fast Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV16S92-7 283,994
    • 1 $0.14
    • 10 $0.095
    • 100 $0.061
    • 1000 $0.042
    • 10000 $0.027
    		Buy Now

    Infineon Technologies AG BAV70E6327HTSA1

    Small Signal Switching Diodes AF DIODE 85V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV70E6327HTSA1 112,714
    • 1 $0.13
    • 10 $0.075
    • 100 $0.044
    • 1000 $0.04
    • 10000 $0.025
    		Buy Now

    Infineon Technologies AG BAV99SH6327XTSA1

    Small Signal Switching Diodes AF DIGITAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV99SH6327XTSA1 103,891
    • 1 $0.18
    • 10 $0.139
    • 100 $0.096
    • 1000 $0.087
    • 10000 $0.055
    		Buy Now

    Infineon Technologies AG BAV 170 E6327

    Small Signal Switching Diodes AF STD RECOVERY RECTIFIER 70V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV 170 E6327 60,956
    • 1 $0.28
    • 10 $0.199
    • 100 $0.097
    • 1000 $0.056
    • 10000 $0.037
    		Buy Now

    Infineon Technologies AG BAV 70 E6327

    Small Signal Switching Diodes AF DIODE 85V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV 70 E6327 36,773
    • 1 $0.24
    • 10 $0.169
    • 100 $0.082
    • 1000 $0.047
    • 10000 $0.031
    		Buy Now
    Find more BAV 27 V price and stock on Findchips.com

    BAV 27 V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bav 27 v

    Abstract: No abstract text available
    Text: BAV 18 … BAV 21 Silicon-Planar-Diodes Silizium-Planar-Dioden Nominal current Nennstrom 250 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…200 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Dimensions / Maße in mm


    Original     		DO-35 OD-27 200/C 100/C bav 27 v PDF

    BAV21

    Abstract: BAV20
    Text: Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 FEATURES DESCRIPTION • H erm etically sealed leaded glass S O D 27 D O -35 package The BAV 20 and BAV21 are sw itching diodes fabricated in planar technology, and encapsulated in herm etically sealed leaded glass S O D 27 (DO-35)


    OCR Scan     		BAV20; BAV21 BAV21 DO-35) BAV20 PDF

    MBM29F400BA-90-V

    Abstract: No abstract text available
    Text: FLASH MEMORY 4M 512K x 8/256K x 16 BIT MBM29 F400TA-90-v -12-v/M BM29 F400B A-90-v-12-v • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands


    OCR Scan     		8/256K MBM29 F400TA-90-v -12-v/M F400B -90-v-12-v 44-pin MBM29F400TA-90-V/-12-V/MBM29F400BA-90-V /-12-V MBM29F400BA-90-V PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    ICL7137

    Abstract: 7 segment display hdsp-5501 bav 27 v 5501 7 segment HDSP-5501 application notes BC307
    Text: 8844 Issued October 1992 8844 Analogue Inputs The analogue inputs IN HI, IN LO, REF HI and REF LO are differential inputs. They respond only to the voltage across them an not their voltage with respect to the power supply. However, no input must be higher than 0.5V below the positive supply or lower than 1.0V above the negative


    Original     		PDF

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


    OCR Scan     		1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    Original     		G-200, 1-877-GOLDMOS 1301-PTB PDF

    SMT resistor

    Abstract: TRANSISTOR 185
    Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion


    Original     		G-200, 1-877-GOLDMOS 1301-PTB SMT resistor TRANSISTOR 185 PDF

    E20124

    Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
    Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular


    Original     		150pF 1-877-GOLDMOS 1301-PTE E20124 E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P PDF

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    ericsson 20151

    Abstract: 9434 1198E bav 17 diode
    Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    Original     		ATC-100 G-200 1-877-GOLDMOS 1301-PTB ericsson 20151 9434 1198E bav 17 diode PDF

    g1758

    Abstract: BYV27-200 byw32-200 G30D GP25M
    Text: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53


    OCR Scan     		5KA43, 5KE440, 1N3611GP 1N3957GP 1N4001 1N4007, 1N4148, 1N4150 1N4151, 1N4245 g1758 BYV27-200 byw32-200 G30D GP25M PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    package 20223

    Abstract: No abstract text available
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		G-200 1-877-GOLDMOS 1301-PTB package 20223 PDF

    capacitor 35 v

    Abstract: 20231 bav 17 diode
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		G-200, 1-877-GOLDMOS 1301-PTE capacitor 35 v 20231 bav 17 diode PDF

    BAV70

    Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
    Text: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99


    OCR Scan     		OT-23 100fl, BAV70 BAV74 BAV99 BAW56 100mA tempe10 BZX84-C11 BZX84-C12 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3 PDF

    in4148 zener diode

    Abstract: ferroxcube bobbin P1408 DPA424PN diode D32 diode zener c25 Epcos N87 zener diode c41 P1408 multiple winding Transformer EQUIVALENT OF ZENER DIODE IN4148
    Text: DI-69 Design Idea DPA-Switch 15 W Multi-Output DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology VoIP Phone DPA424PN 15 W 36 – 75 VDC 5 V, 7.5 V, 20 V Forward Design Highlights • • • • • • • Low component count


    Original     		DI-69 DPA424PN DI-69 in4148 zener diode ferroxcube bobbin P1408 DPA424PN diode D32 diode zener c25 Epcos N87 zener diode c41 P1408 multiple winding Transformer EQUIVALENT OF ZENER DIODE IN4148 PDF

    in4148 zener diode

    Abstract: diode D32 EQUIVALENT OF ZENER DIODE IN4148 zener diode c41 diode zener c25 epcos n87 ferroxcube bobbin ferroxcube bobbin P1408 zener diode c25 Si4804
    Text: Design Idea DI-69 DPA-Switch 15 W Multi-Output DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology VoIP Phone DPA424P 15 W 36-75 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • Low component count • Built-in accurate OV/UV with single resistor


    Original     		DI-69 DPA424P in4148 zener diode diode D32 EQUIVALENT OF ZENER DIODE IN4148 zener diode c41 diode zener c25 epcos n87 ferroxcube bobbin ferroxcube bobbin P1408 zener diode c25 Si4804 PDF