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    BAV 27 V Search Results

    BAV 27 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TVS2700DRVR Texas Instruments 27V flat-clamp surge protection device 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS61080DRCR Texas Instruments 27V, 500mA switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61080DRCT Texas Instruments 27V, 500mA switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61081DRCT Texas Instruments 27V, 1.2A switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61081DRCR Texas Instruments 27V, 1.2A switch, 1.2MHz Boost Converter with integrated power diode 10-VSON -40 to 85 Visit Texas Instruments Buy
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    BAV 27 V Price and Stock

    Diodes Incorporated BAV16S92-7

    Small Signal Switching Diodes 100V 75Vrrm 53Vr 200mA Fast Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV16S92-7 374,947
    • 1 $0.24
    • 10 $0.135
    • 100 $0.067
    • 1000 $0.04
    • 10000 $0.027
    		Buy Now

    Infineon Technologies AG BAV70E6327HTSA1

    Small Signal Switching Diodes AF DIODE 85V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV70E6327HTSA1 128,289
    • 1 $0.26
    • 10 $0.14
    • 100 $0.074
    • 1000 $0.063
    • 10000 $0.041
    		Buy Now

    Infineon Technologies AG BAV99SH6327XTSA1

    Small Signal Switching Diodes AF DIGITAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV99SH6327XTSA1 111,973
    • 1 $0.49
    • 10 $0.304
    • 100 $0.145
    • 1000 $0.13
    • 10000 $0.093
    		Buy Now

    Infineon Technologies AG BAV 170 E6327

    Diodes - General Purpose, Power, Switching AF STD RECOVERY RECTIFIER 70V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV 170 E6327 61,966
    • 1 $0.38
    • 10 $0.261
    • 100 $0.128
    • 1000 $0.074
    • 10000 $0.049
    		Buy Now

    Infineon Technologies AG BAV199E6327HTSA1

    Small Signal Switching Diodes AF STD RECOVERY RECTIFIER 85V 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAV199E6327HTSA1 55,334
    • 1 $0.29
    • 10 $0.175
    • 100 $0.083
    • 1000 $0.073
    • 10000 $0.046
    		Buy Now
    Find more BAV 27 V price and stock on Findchips.com

    BAV 27 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bav 27 v

    Abstract: No abstract text available
    Text: BAV 18 … BAV 21 Silicon-Planar-Diodes Silizium-Planar-Dioden Nominal current Nennstrom 250 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…200 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Dimensions / Maße in mm


    Original     		PDF DO-35 OD-27 200/C 100/C bav 27 v

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    E20124

    Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
    Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular


    Original     		PDF 150pF 1-877-GOLDMOS 1301-PTE E20124 E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P

    e20231

    Abstract: 20231 transistor E101
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    ericsson 20151

    Abstract: 9434 1198E bav 17 diode
    Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    Original     		PDF ATC-100 G-200 1-877-GOLDMOS 1301-PTB ericsson 20151 9434 1198E bav 17 diode

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    package 20223

    Abstract: No abstract text available
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB package 20223

    capacitor 35 v

    Abstract: 20231 bav 17 diode
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE capacitor 35 v 20231 bav 17 diode

    in4148 zener diode

    Abstract: diode D32 EQUIVALENT OF ZENER DIODE IN4148 zener diode c41 diode zener c25 epcos n87 ferroxcube bobbin ferroxcube bobbin P1408 zener diode c25 Si4804
    Text: Design Idea DI-69 DPA-Switch 15 W Multi-Output DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology VoIP Phone DPA424P 15 W 36-75 VDC 5 V / 7.5 V / 20 V Forward Design Highlights • Low component count • Built-in accurate OV/UV with single resistor


    Original     		PDF DI-69 DPA424P in4148 zener diode diode D32 EQUIVALENT OF ZENER DIODE IN4148 zener diode c41 diode zener c25 epcos n87 ferroxcube bobbin ferroxcube bobbin P1408 zener diode c25 Si4804

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


    OCR Scan     		PDF 1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a

    BAV70

    Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
    Text: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99


    OCR Scan     		PDF OT-23 100fl, BAV70 BAV74 BAV99 BAW56 100mA tempe10 BZX84-C11 BZX84-C12 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3

    Untitled

    Abstract: No abstract text available
    Text: HD440072-Sync Signal Generator for TV Cameras NTSC, PAL/SECAM Functions • Four tim es chrom a su b -c a rrie r o scillato r frequency • (B-Y) and (R-Y) chroma sub-carrier output circuit • Active filter genlock phase detector • Horizontal programmable logic array


    OCR Scan     		PDF HD440072--------------------Sync HD440072 fH/282 fH/282

    C547C

    Abstract: PC547 M722 foxconn schematics foxconn rp1 10k R614 Q512 FOXCONN LAN Connector C555
    Text: M762 N/B Maintenance 6. System Block Diagram M762 N/B M aintenance 1.2 System Architecture 1.2.1 Block Diagram without Power System MODEL :M762 Revision OA C ontexts TITLE PAGE COVER SHEET 01 BLOCK DIAGRAM 02 POWER BLOCK DIAGRAM 03 FC-PGACPU (1/2) 04 FC-PGA CPU (2/2)


    OCR Scan     		PDF 630ST 128MB 164LED ADM1032 1EEE1394 V/5V/12V/S1 10UPER C547C PC547 M722 foxconn schematics foxconn rp1 10k R614 Q512 FOXCONN LAN Connector C555

    BDP 284

    Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
    Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    OCR Scan     		PDF 3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529

    2N2369 SOT-23

    Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
    Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


    OCR Scan     		PDF BAW63 BZX88-C10 BZX88-C11 BZX88-C12 BZX88-C13 BZX88-C15 BZX88-C16 BZX88-C18 BZX88-C20 BZX88-C22 2N2369 SOT-23 BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A

    W23C8192

    Abstract: No abstract text available
    Text: fcüö 4» « * W23C8192 Winbond 1024K X 8 CMOS MASK ROM GENERAL DESCRIPTION FEATURES The W23C8192 is a high speed, • Low power consumption: low power mask-programmable read-only memory organ­ Active: 150mW typ. ized as 1048576 X 8 bits and operates on a


    OCR Scan     		PDF W23C8192 150mW 1024K W23C8192 759291C

    diode marking w8

    Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
    Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


    OCR Scan     		PDF BAW63 BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 ZC830 BZX84-C4V3 ZC830A diode marking w8 diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4

    A2ND

    Abstract: CY7C9116 7C9116 7C9115
    Text: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR CMOS 16-Bit Microprogrammed ALU CY7C9117 separate I/O — One and two operand arithmetic and logical operations — Bit m anipulation, field insertion/ extraction instructions — Eleven types of instructions


    OCR Scan     		PDF CY7C9115 CY7C9116/CY7C9117 35-ns 16-Bit 9116A, 29C116, 9117A 29C117 CY7C9117 A2ND CY7C9116 7C9116 7C9115

    W22C

    Abstract: W22C4096 262144X16
    Text: AUó I« tan W22C4096 Winbond 2 5 6 K X 1 6 BITS/512KX8 BITS CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W22C4096 is a high speed, low power mask-programmable read-only memory organ­ Standby: 25^W(typ.) ized as 262144X16 bits or 524288 X 8 bits


    OCR Scan     		PDF W22C4096 BITS/512KX8 W22C4096 262144X16 B-1930 W22C

    Z8060-FIFO

    Abstract: Z8060DC rfdi
    Text: FIFO Z8060 Z8060 FIFO Buffer Unit and FIFO Expander DISTINCTIVE CHARACTERISTICS • • • • • Bidirectional, asynchronous data transfer capability Large 128-bit-by-8-bit buffer memory Two-wire, interlocked handshake protocol 3-state data outputs Wire-ORing of empty and full outputs for sensing of


    OCR Scan     		PDF Z8060 Z8060 128-bit-by-8-bit Z8060* 02128B Z8060-FIFO Z8060DC rfdi