BAV99
Abstract: bav70 BAW56
Text: BAV70 / BAW56 / BAV99 / BAS16 Diodes Switching diode BAV70 / BAW56 / BAV99 / BAS16 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplications Ultra high speed switching 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zFeatures 1) Small surface mounting type. (SSD3)
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BAV70
BAW56
BAV99
BAS16
OT-23
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25CC
Abstract: BAS16 BAV99
Text: BAS16 & Discrete POW ER & Sig n a l Technologies National Semiconductor~ BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol ta- as-cun*«omessenoted Parameter Value Units W|v Working Inverse Voltage
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OCR Scan
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BAS16
BAV99
b50113D
DQ40541
00MD542
25CC
BAS16
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage
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BAS16
BAV99
bSD113G
DD4DS41
100ii
bSD113D
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PDF
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1N4150
Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
Text: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage
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BAS16
OT-23
BAV99
1N4150
BAS16
MMBD1201
A6 SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: Diodes Ultra High-Speed Switching Diode Array BAV70/BAW56/BAV99/BAS16 38 These products are marketed only in countries other than Japan. •Application •External dimensions Units: mm Ultra high speed switching •Features 1) Compact size 2) High reliability
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BAV70/BAW56/BAV99/BAS16
BAV70
BAW56
BAV99
D1572G
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PDF
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BAV99
Abstract: bav70 BAW56 BAS16 BAV99 application Diode bav99 Diode bav70 BAS16 transistor BAV99 datasheet
Text: Diodes Ultra high–speed switching diode array BAV70 / BAW56 / BAV99 / BAS16 ✻This product is available only outside of Japan. FApplication Ultra high speed switching FExternal dimensions Units: mm FFeatures 1) Compact size 2) High speed (trr = 1.5ns Typ.)
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BAV70
BAW56
BAV99
BAS16
BAV70/BAW56/BAV99/BAS16
56/BAV99/BAS16
BAS16
BAV99 application
Diode bav99
Diode bav70
BAS16 transistor
BAV99 datasheet
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PDF
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IMP11
Abstract: dan212K DAN217 IMN11 DAP202U DAN202K DAP222 DAP202K UMN1N
Text: Diodes Ultra high–speed switching diode array BAV70 / BAW56 / BAV99 / BAS16 ✻This product is available only outside of Japan. FApplication Ultra high speed switching FExternal dimensions Units: mm FFeatures 1) Compact size 2) High speed (trr = 1.5ns Typ.)
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BAV70
BAW56
BAV99
BAS16
BAV70/BAW56/BAV99/BAS16
DA114
DA121
DA227
DAN202K
IMP11
dan212K
DAN217
IMN11
DAP202U
DAP222
DAP202K
UMN1N
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PDF
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BAX12 equivalent
Abstract: 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840
Text: Philips Semiconductors Small-signal Transistors and Diodes Index TYPE NUMBER TYPE NUMBER TYPE NUMBER 1N821 1PS76SB70 BAL74 1N821 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A 1PS79SB70 BAL99W 1N825 1PS88SB48 BAS16 1N825A 1PS89SB14 BAS16T 1N827 1PS89SB15 BAS16W
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1N821
1PS76SB70
BAL74
1PS79SB10
BAL74W
1N823
1PS79SB40
BAL99
1N823A
BAX12 equivalent
1N4532
1n823a
BAT721S
BAX18 equivalent
plva600a
1PS301
1PS59SB10
BFS20W
BF840
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PDF
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bav99
Abstract: BAW56 bav70 equivalent
Text: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package
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BAS16
BAV70
BAW56
BAV99
200-215m
OT-23
OT-23
bav99
bav70 equivalent
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PDF
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DO-213AA 1N4148
Abstract: sem 5020 MLL4148-1 JANTXV1N4148UR-1 LT 7247 lt 7246 1N4148 DL-35 PACKAGE microsemi DL4448 JANTX1N4148
Text: Signal/General Purpose Diodes Part Number JANTXV1N4454-1 JANTXV1N4454-1 JANTXV1N4454UR-1 ESA1N4150-1 ESA1N4151-1 BAS16 1N4148 1N4149 1N4446 1N4447 1N4448 1N4448 1N4449 1N914 OL4148 DL4448 DL914 A (B) MLL4148-1 MLL4454-1 MMBD4148 MMBD7000 MMBD914 JAN1N4148-1
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DO-35
DO-213AA
OT-23
DO-213AA 1N4148
sem 5020
MLL4148-1
JANTXV1N4148UR-1
LT 7247
lt 7246
1N4148 DL-35 PACKAGE
microsemi DL4448
JANTX1N4148
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PDF
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BAV99
Abstract: BAV70 BAW56 BAS16 Diode BAV99 SOT23 Diode bav99
Text: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package *Device per Reel Mount : 3k/Reel
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BAS16
BAV70
BAW56
BAV99
200-215m
OT-23
OT-23
BAV99
BAV70
Diode BAV99 SOT23
Diode bav99
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PDF
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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PDF
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BAW56
Abstract: SOT-23 BAS16 BAV99
Text: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)
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BAS16
BAV99
OT-23
OT-23
BAV70
BAW56
BAW56
SOT-23
BAS16 BAV99
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PDF
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Untitled
Abstract: No abstract text available
Text: WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions
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Original
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BAS16
BAV70
BAW56
BAV99
200-215m
OT-23
OT-23
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PDF
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BAS16 fairchild
Abstract: fairchild bas16 A6 DIODE bas16 a6 DIODE A6 BAS16 BAV99 a6 bas16
Text: BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage
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Original
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BAS16
OT-23
BAV99
BAS16 fairchild
fairchild bas16
A6 DIODE
bas16 a6
DIODE A6
BAS16
a6 bas16
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)
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BAS16
BAV99
OT-23
OT-23
BAV70
BAW56
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PDF
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BAY84
Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240
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350mW
BAL99
BAR99
BAS16
BAS19
BAS20
BAS21
BAS29
BAS31
BAS35
BAY84
BAY85S
D1850
SDBAX12
bay85
BAS21 A82
d53 MARKING CODE SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: S 5= M I C O N O L J C T C R y* BAS16 CONNECTION DIAGRAM _ a AC LFT~ BT SOT-23 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Param eter S ym bol V alu e
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BAS16
OT-23
BAV99
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PDF
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Untitled
Abstract: No abstract text available
Text: Diodes/Transistors/LEDs Assortment Kit 42 \ nines mini t I k IIs /i S i m i l l Si ^ 11: 11 H i n d i s h i t I lim it s SOT23 SOT23 MMBD914 BAS16 MMBD2838 (BAV70) MMBD2836 (BAW56) MMBD7000 (BAV99) * SOD80 BAV100 LL914 LL4148 R lL 'IillL T S SOD80 l.ll \ 111|]
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MMBD914
BAS16)
MMBD2838
BAV70)
MMBD2836
BAW56)
MMBD7000
BAV99)
SM4001
SM4002
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PDF
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TO-236AB
Abstract: to236ab 236A BAS31 BAS35 BAV70 BAV74 BAV99 BAW56 TO-236-AB
Text: This I Q~ Material In t-1 t-> UJ □ Copyrighted aa jr aIn ru a tr jr •H By Its 1 Respective N> $ Discrete POWER & Signal Technologies National Semiconductor'" Device No. Pro Electron Surface Mount Diodes Vrrm V«m V Min <nA) Min BAS16 BAS 19 BAS20 BAS21
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O-236AB
TO-236AB
to236ab
236A
BAS31
BAS35
BAV70
BAV74
BAV99
BAW56
TO-236-AB
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PDF
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Untitled
Abstract: No abstract text available
Text: Small Signal Diode SOT23 - —y Type Ratings 4“ ^ ^ 500 pcs vR 100 pcs Max Max 'f t rr cD SPECIFICATIONS Part Marking Single Diode BAS16 MMBD914 72-0016 72-0914 52-0016 52-0914 minilfeel 75V 250mA 6nS 2pF A6 100V 200mA 15nS 4pF 5D or D01 Schematic Top View
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OCR Scan
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250mA
200mA
BAS16
MMBD914
BAV70
BAW56
BAV99
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PDF
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BF963
Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99
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OD-123
1N4001
1N4002
1N4003
1N4004
1N4148
BF963
1N4004 SOD-123
BC547 smd
BB409
2n2907 smd
BAT16-046
1N4148
2N2907 SOT-23
1N4148 SOD-123
2n2222 smd
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PDF
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Untitled
Abstract: No abstract text available
Text: D is c re te PO W E R & S ig n a l Technologies S g fy liG O N Q U Q T O R * BAS16 CONNECTION DIAGRAM M 13 " SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted
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OCR Scan
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BAS16
OT-23
BAV99
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PDF
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BAS3590
Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
Text: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100
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BA128
DO-35
BA129
BA130
BA217
BA218
BAS3590
BAY71
BA316
BA317
BA318
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PDF
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