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    BAD BLOCK MANAGEMENT IN MLC Search Results

    BAD BLOCK MANAGEMENT IN MLC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    BAD BLOCK MANAGEMENT IN MLC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		PDF NAND16GW3C4B 16-Gbit 2112-byte

    Untitled

    Abstract: No abstract text available
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area


    Original     		PDF NAND32GW3D4A 32-Gbit 4224-byte

    bad block management in mlc nand

    Abstract: No abstract text available
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area


    Original     		PDF NAND32GW3D4A 32-Gbit 4224-byte bad block management in mlc nand

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		PDF NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit

    NAND32G

    Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area


    Original     		PDF NAND32GW3D4A 32-Gbit 4224-byte NAND32G 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash

    64Gbit

    Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
    Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area


    Original     		PDF NAND64GW3D4A 64-Gbit 4224-byte 64Gbit NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G

    Wear Leveling in Single Level Cell NAND Flash Memory

    Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
    Text: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage


    Original     		PDF NAND04Gx3C2A NAND08Gx3C2A Wear Leveling in Single Level Cell NAND Flash Memory 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc

    package tsop48

    Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
    Text: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications


    Original     		PDF NAND08GW3C2B 2112-byte TSOP48 LGA52 package tsop48 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0

    NAND04GW3C2A

    Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
    Text: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface


    Original     		PDF NAND04GA3C2A NAND04GW3C2A TSOP48 NAND04GW3C2A NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory

    Untitled

    Abstract: No abstract text available
    Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND16GW3D2A 16-Gbit, 4224-byte

    NAND04

    Abstract: A15-A23
    Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		PDF NAND04GW3C2B NAND08GW3C2B 2112-byte NAND04 A15-A23

    LGA52

    Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258

    LGA52

    Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models

    LGA52

    Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
    Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 2112-byte TSOP48 LGA52 128yx 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C

    NAND08GW3D2A

    Abstract: No abstract text available
    Text: NAND08GW3D2A 8-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 256 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3D2A 4224-byte NAND08GW3D2A

    LGA52

    Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
    Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2B NAND16GW3C4B TSOP48 LGA52 LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B

    NAND16GW3D2A

    Abstract: C5761 2112B
    Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND16GW3D2A 16-Gbit, 4224-byte NAND16GW3D2A C5761 2112B

    16G nand

    Abstract: No abstract text available
    Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 16-Gbit, 4224-byte 16-Gbit 16G nand

    NAND16GW3D2A

    Abstract: NAND32GW3D4A NAND08GW3D2A
    Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		PDF NAND08GW3D2A NAND16GW3D2A 16-Gbit, 4224-byte 16-Gbi" NAND16GW3D2A NAND32GW3D4A

    NAND16GW3D2A

    Abstract: NAND32GW3D4A
    Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 16-Gbit, 4224-byte NAND16GW3D2A NAND32GW3D4A

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant Serial ATA Flash Drive Specifications for SAFD 18P-M March 23rd, 2012 Version 1.4 Apacer Technology Inc. th 4 Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Serial ATA Flash Drive


    Original     		PDF 18P-M APS18P6Axxxx-CCMXX

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant Serial ATA Flash Drive SAFD18S4 -M Product Specifications March 23rd, 2012 Version 1.3 Apacer Technology Inc. Apacer Technology Inc. 9/F, th No. 100, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan 4 Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221


    Original     		PDF SAFD18S4 APS1845xxxx-ACMX

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant Serial ATA Flash Drive SAFD 25P-M Specifications March 20th, 2012 Version 1.6 Apacer Technology Inc. th 4 Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Serial ATA Flash Drive


    Original     		PDF 25P-M APS25P6Bxxxx-

    JEDEC MO-297

    Abstract: MO-297 Apacer APS1845032G-ACM SATA signal connector SSD flash male connector 64GB Nand flash MLC memory APS1845064G-ACMW block diagram of sata SSD drive ssd controller
    Text: RoHS Compliant Serial ATA Flash Drive SAFD18S4 -M Product Specifications November 29th, 2011 Version 1.1 Apacer Technology Inc. Apacer Technology Inc. 9/F, No. 100, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan 4th Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221


    Original     		PDF SAFD18S4 APS1845xxxx-ACMX JEDEC MO-297 MO-297 Apacer APS1845032G-ACM SATA signal connector SSD flash male connector 64GB Nand flash MLC memory APS1845064G-ACMW block diagram of sata SSD drive ssd controller