HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hy27u*08ag5
hynix nand
Hynix 16Gb Nand flash
16G nand
HY27U*G5M
hynix nand PROGRAMMING
marking GG
uLGA
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HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hynix nand spare area
16gb
hy27u*08ag5
hynix nand flash
Hynix 16Gb Nand flash
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3DFN16G08
Abstract: VS464
Text: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3DFN16G08VS4643
16Gbit
512MGx8
384KM
3DFP-0643-REV
3DFN16G08
VS464
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Hynix 16Gb Nand flash
Abstract: HY27UH08AG marking code ADH 16G nand hy27u*08ag5 HY27UH08AG5M HY27UH08AGDM 16GB Nand flash HY27U*G5M 52TLGA
Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
Hynix 16Gb Nand flash
marking code ADH
16G nand
hy27u*08ag5
HY27UH08AG5M
16GB Nand flash
HY27U*G5M
52TLGA
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Hynix 16Gb Nand flash
Abstract: hy27u*08ag5 HY27UH08AG5M HY27UH08AGDM 2gx8 HY27U*G5M hy27u*08ag5m
Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
Hynix 16Gb Nand flash
hy27u*08ag5
HY27UH08AG5M
2gx8
HY27U*G5M
hy27u*08ag5m
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hy27u*08ag5
Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
Text: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG5B
16Gbit
HY27UH08AG5B
hy27u*08ag5
Hynix 16Gb Nand flash
hynix nand
NAND FLASH 64MB
reset nand flash HYNIX
hynix nand edc spare area code
hynix nand flash 1.8v 4Gb
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16GB Nand flash
Abstract: Hynix 16Gb Nand flash HY27UH08AG hy27u*08ag5 16G nand HY27UH08AG5M HY27UH08AGDM nand flash 16gb HY27U hynix nand 16gb
Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
16GB Nand flash
Hynix 16Gb Nand flash
hy27u*08ag5
16G nand
HY27UH08AG5M
nand flash 16gb
HY27U
hynix nand 16gb
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B4D
16-Gbit
2112-byte
TSOP48
JESD97
NAND04G-B2D
TSOP48 outline
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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toshiba emmc 4.4
Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.
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SCE0008G
E-28831
SCE0008H
toshiba emmc 4.4
toshiba 8GB Nand flash emmc
toshiba emmc
toshiba 16GB Nand flash emmc
TCM9000MD
TCM9200MD
TOSHIBA eMMC CATALOG
TC35893XBG
RGB to MIPI DSI LCD
toshiba 8GB Nand flash bga
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K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WBG08U1M
K9KAG08U0M
K9NCG08U5M
K9XXG08XXM
100ns)
K9WBG08U1M-PCB0
K9NCG08U5M-PCB0
K9NCG08U5M
Samsung K9NCG08U5M
K9F8G08U0M
K9KAG08U0M-PCB0
k9wbg08
K9KAG08U0M-P
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PF38F4050L0ZTQ0
Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit
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L18/L30
768-Mbit
256-Mbit
64-Mbit
16-Mbit
PF38F4050L0ZTQ0
PF38F3040
numonyx 106 ball
RD38F4455
PF48F4400L0
RD38F40
PF38F4050
numonyx 107-ball
Numonyx StrataFlash M18
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C7478
Abstract: No abstract text available
Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2B
4224-byte
C7478
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NAND16GW3F4A
Abstract: 16G nand
Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND16GW3F4A
16-Gbit
4224-byte
NAND16GW3F4A
16G nand
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2B
NAND16GW3C4B
TSOP48
LGA52
LGA-52
ULGA52
nand 16g
16G nand flash
NAND08GW3C2B
NAND16GW3
NAND16GW3C4A
NAND16GW3C4B
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Stacked 4MB NOR FLASH & SRAM with AD multiplexed
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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x32SH
x16SB
x16/x32
Stacked 4MB NOR FLASH & SRAM with AD multiplexed
FLASH MEMORY 38F
FLASH MEMORY 48F
Numonyx admux
48F4400
numonyx 106 ball
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256l18
Abstract: 256l30 sar106 1024Mbit 1024-Mbit PF48F 298132 PBA 16-10
Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)
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LV18/LV30
1024-Mbit
256-Mbit
16-KWord
64-KWord
38F/48F
32-Mbit
64-Mbit
128-Mbit
256l18
256l30
sar106
1024Mbit
PF48F
298132
PBA 16-10
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S34MS04G200
Abstract: S34MS04G2 S34MS01G200 63-BGA S34MS01G204 S34MS01G2 Spansion NAND Flash DIE S34MS04G204
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S34MS01G2,
S34MS04G2
S34MS01G2
S34MS04G200
S34MS04G2
S34MS01G200
63-BGA
S34MS01G204
Spansion NAND Flash DIE
S34MS04G204
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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RD38F4
Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
Text: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash
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1024-Mbit
256-Mbit
16-KWord
64-KWord
128-Mbit
256-Mbit
128-Mbit
32-Mbit
64-Mbit
RD38F4
rd58f0012lvybb0
30094* intel
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AF9710
Abstract: sanyo denki super mini AG9730 Micro CCD Cable RENESAS marking code FOR MICRO BGA AF9723 GANG PROGRAMMER panasonic jig serial cable AF9723B-AF9845 AF9723 user manual 2716 eprom manual programming by switch
Text: & Quick Flexible Product Catalog for Device Programmers Contact Information •Supported devices Supported devices are found in the device list and device search in our website. As for the latest devices or devices not listed in the device list, we will support them on a request basis. For more information, contact our technical support below.
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Numonyx admux
Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option
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128-Mbit
128-Mbit
32-Mbit
x32SH
x16SB
x16/x32
Numonyx admux
PF38F2030W0YTQE
numonyx 106 ball
PSRAM
TBA 931
PF38F2030
4400p0
x16C
NOR Flash AAD
die000000h
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FLASH MEMORY 38F
Abstract: 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit
Text: Numonyx Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed
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28F640W30,
28F320W30,
28F128W30
x32SH
x16SB
x16/x32
FLASH MEMORY 38F
128M NAND Flash Memory
8857H
28F128W30
28F320W30
28F640W30
48F4400
numonyx 106 ball
Numonyx Embedded Flash Memory
strataflash 512mbit
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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