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    Melexis Microelectronic Integrated Systems MLX92241LUA-BAA-121-SP

    2-WIRE SWITCH INT CAP BOP/BRP: P
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    DigiKey MLX92241LUA-BAA-121-SP Bulk 80
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    Mouser Electronics MLX92241LUA-BAA-121-SP
    • 1 $1.22
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    • 100 $0.667
    • 1000 $0.561
    • 10000 $0.421
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    Melexis Microelectronic Integrated Systems MLX92241LUA-BAA-121-CA

    2-WIRE SWITCH INT CAP BOP/BRP: P
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    DigiKey MLX92241LUA-BAA-121-CA Ammo Pack 5,000
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    Melexis Microelectronic Integrated Systems MLX92241LUA-BAA-121-BU

    2-WIRE SWITCH INT CAP BOP/BRP: P
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    DigiKey MLX92241LUA-BAA-121-BU Bulk 5,000
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    SiTime Corporation SIT1424BAA12-18N-25.000000E

    OSCILLATOR, SIT1424, -40 to 125C, 2520, 25ppm, 1.8V, 25MHz, OE, A Dr Str - Tape and Reel (Alt: SIT1424BAA12-18N-2)
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    Avnet Americas SIT1424BAA12-18N-25.000000E Reel 1,000
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    SiTime Corporation SIT8924BAA12-18E-25.000000E

    MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8924BAA12-18E-2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT8924BAA12-18E-25.000000E Reel 14 Weeks 1,000
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    Find more BAA 121 price and stock on Findchips.com

    BAA 121 Datasheets Context Search

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    powerpc 601 advanced information

    Abstract: Nippon capacitors Mpc601
    Text: MOTOROLA Order this document by MPC2002/D SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for PowerPC – Based Systems The MPC2002SG and MPC2003SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the PowerPC 60x processors. The modules are configured as 32K x 72 and 64K x 72 bits in a 136 pin dual readout single


    Original     		PDF MPC2002/D 256KB 512KB MPC2002SG MPC2003SG 256K/512K MCM67M518 MCM67M618 MPC2002 MPC2003 powerpc 601 advanced information Nippon capacitors Mpc601

    LT3973-3.3

    Abstract: L6283-1.3 TT8112-3.3 lm394ois-3.3 LMS1117-3.3 CJP1117T-3.3 TH2067.3 LM1585AIT-3.3 LM3674MF-3.3 LP2950DT-3.3
    Text: 43567189ABCDEF33 BA2B2AAB3 1 1 1234567892A36B5CA46D89EA1 FD1  1 12342556423789ABC56 1 6 6 2D59EF651 7 FEC42574A52427 7 5#35!!77 7 1 333 3BAA!"3 39#36$ 3 3.3"/# , 3FD%#!3


    Original     		PDF 43567189ABCDEF3 1234567892A36B5CA46D89EA1 12342556423789ABC56 2D59EF65 FEC4257 CFE57 9E423 67589A1 B8C9AD341EF 24E49C71C5 LT3973-3.3 L6283-1.3 TT8112-3.3 lm394ois-3.3 LMS1117-3.3 CJP1117T-3.3 TH2067.3 LM1585AIT-3.3 LM3674MF-3.3 LP2950DT-3.3

    dh23

    Abstract: DH0 165 dh15 F04 MOTOROLA MPC2006 dh14 TAG 93 motorola f04 Nippon capacitors burndy baa
    Text: MOTOROLA Order this document by MPC2004/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms MPC2004 MPC2005 The MPC2004 and MPC2005 are designed to provide burstable, high performance 256KB/512KB L2 cache for the PowerPC 60x microprocessor family in


    Original     		PDF MPC2004/D 256KB 512KB MPC2004 MPC2005 MPC2004 MPC2005 256KB/512KB dh23 DH0 165 dh15 F04 MOTOROLA MPC2006 dh14 TAG 93 motorola f04 Nippon capacitors burndy baa

    HYB25D512800AT

    Abstract: TSOP-66
    Text: HYB25D512400/800/160AT L 512-MBit Double Data Rata SDRAM Preliminary Datasheet V0.91, 2002-11-14 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR333 -8 -7 -6 100 133 133 125 143 166 • Double data rate architecture: two data transfers


    Original     		PDF HYB25D512400/800/160AT 512-MBit DDR200 DDR266A DDR333 HYB25D512800AT TSOP-66

    Untitled

    Abstract: No abstract text available
    Text: NT5DS32M4AT NT5DS16M8AT 128Mb Double Data Rate SDRAM Features CAS Latency and Frequency Maximum Operating Frequency MHz * DDR266A DDR266B DDR200 (-7K) (-75B) (-8B) 2 133 100 100 2.5 143 133 125 * Values are nominal (exact tCK should be used). CAS Latency


    Original     		PDF NT5DS32M4AT NT5DS16M8AT 128Mb DDR266A DDR266B DDR200

    Untitled

    Abstract: No abstract text available
    Text: NT5DS64M4AT NT5DS32M8AT 256Mb Double Data Rate SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles • Commands entered on each positive CK edge; data and


    Original     		PDF NT5DS64M4AT NT5DS32M8AT 256Mb PC2100 PC1600

    Untitled

    Abstract: No abstract text available
    Text: NT5DS64M4AT NT5DS32M8AT 256Mb Double Data Rate SDRAM Features CAS Latency and Frequency Maximum Operating Frequency MHz * DDR266A DDR266B DDR200 (-7K) (-75B) (-8B) 2 133 100 100 2.5 143 133 125 * Values are nominal (exact tCK should be used). CAS Latency


    Original     		PDF NT5DS64M4AT NT5DS32M8AT 256Mb DDR266A DDR266B DDR200

    AM29BL162CB

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors


    Original     		PDF Am29BL162C 16-Bit) AM29BL162CB

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • 16M Bit 1M x 16 Flash Memory 3.0 ± 10% Read/Write Random Access Time - 100 ns Burst Access Time - 25 ns Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout


    Original     		PDF 1141B 05/99/xM

    NT5DS32M4AT-7K

    Abstract: DDR200 DDR266A DDR266B NT5DS16M8AT NT5DS32M4AT PC2100 NT5DS16M8AT-7K
    Text: NT5DS32M4AT NT5DS16M8AT 128Mb Double Data Rate SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		PDF NT5DS32M4AT NT5DS16M8AT 128Mb PC2100 PC1600 NT5DS32M4AT-7K DDR200 DDR266A DDR266B NT5DS16M8AT NT5DS32M4AT NT5DS16M8AT-7K

    NT5DS16M8AT-7K

    Abstract: DDR200 DDR266A DDR266B NT5DS16M8AT NT5DS32M4AT NT5DS32M4AT-7K PC2100
    Text: NT5DS32M4AT NT5DS16M8AT 128Mb Double Data Rate SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		PDF NT5DS32M4AT NT5DS16M8AT 128Mb PC2100 PC1600 NT5DS16M8AT-7K DDR200 DDR266A DDR266B NT5DS16M8AT NT5DS32M4AT NT5DS32M4AT-7K

    DDR200

    Abstract: DDR266A DDR266B NT5DS16M8AT NT5DS16M8AT-7K NT5DS32M4AT PC2100
    Text: NT5DS32M4AT NT5DS16M8AT 128Mb Double Data Rate SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions, also aligns QFC transitions with CK during Read cycles • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS


    Original     		PDF NT5DS32M4AT NT5DS16M8AT 128Mb PC2100 PC1600 DDR200 DDR266A DDR266B NT5DS16M8AT NT5DS16M8AT-7K NT5DS32M4AT

    120R

    Abstract: IN3064 SA10
    Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and


    Original     		PDF Am29BL162C 16-Bit) 20-year 120R IN3064 SA10

    IBM0612804GT3B

    Abstract: PC200 128MB PC266
    Text: IBM0612404GT3B IBM0612804GT3B 128Mb Double Data Rate Synchronous DRAM Advance Rev 0.2 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * PC266A (-7N) PC266B (-75N) PC200 (-8N) 133 143 125 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBM0612404GT3B IBM0612804GT3B 128Mb PC266A PC266B PC200 06K0566 F39359. IBM0612804GT3B PC200 128MB PC266

    IBM0625404GT3B

    Abstract: IBM06254K4GT3B IBM0625804GT3B PC200 IBM0625804GT3B-8E
    Text: IBM0625404GT3B IBM06254K4GT3B IBM0625804GT3B 256Mb Double Data Rate Synchronous DRAM Advance Rev 0.2 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * PC266A (-75E) PC266B (-8E) PC200 (-10H) 133 143 125 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBM0625404GT3B IBM06254K4GT3B IBM0625804GT3B 256Mb PC266A PC266B PC200 29L0011 E36997 IBM0625404GT3B IBM0625804GT3B PC200 IBM0625804GT3B-8E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and


    Original     		PDF Am29BL162C 16-Bit)

    Untitled

    Abstract: No abstract text available
    Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and


    Original     		PDF Am29BL162C 16-Bit)

    Am29BL802CB-120R

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors


    Original     		PDF Am29BL802C 16-Bit) Am29BL802CB-120R

    a8000

    Abstract: AD0-AD15 AD11 AD12 AD14
    Text: Features • • • • • • • • • • • • • • 16M Bit 1M x 16 Flash Memory 3.0 ± 10% Read/Write Random Access Time - 100 ns Burst Access Time - 25 ns Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout


    Original     		PDF 1030B 05/99/xM a8000 AD0-AD15 AD11 AD12 AD14

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors


    Original     		PDF Am29BL802C 16-Bit)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and


    Original     		PDF Am29BL162C 16-Bit)

    FM Receiver

    Abstract: SPB424
    Text: Philips Semiconductors Preliminary specification Terrestrial Digital Sound Decoder TDSD2 CAft70fi bAA/202 FEATURES • Autom atic decoding and output configuration depending upon transmission: - digital stereo - digital m ono and data - 2 independent mono signals


    OCR Scan     		PDF CAft70fi bAA/202 14-bit SAA7282ZP FM Receiver SPB424

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72MS32 MCM72MS64 256KB and 512KB BurstRAM Secondary Cache Module for PowerPC™ - Based Systems The MCM72MS32SG and MCM72MS64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the PowerPC 60x processors.


    OCR Scan     		PDF MCM72MS32 MCM72MS64 256KB 512KB MCM72MS32SG MCM72MS64SG 256K/512K MCM67M518 MCM67M618

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION A M D ii Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors


    OCR Scan     		PDF Am29BL802C 16-Bit) 000NTRUSION