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    Vishay Semiconductors G3SBA60-E3-45

    BRIDGE RECT 1PHASE 600V 2.3A GBU
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    DigiKey G3SBA60-E3-45 Tube 1,490 1
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    • 1000 $0.66204
    • 10000 $0.629
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    Vishay Semiconductors G3SBA60-E3-51

    BRIDGE RECT 1PHASE 600V 2.3A GBU
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    DigiKey G3SBA60-E3-51 Bulk 2,000
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    • 10000 $0.67634
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    Vishay Semiconductors G5SBA60-E3-51

    BRIDGE RECT 1PHASE 600V 2.8A GBU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G5SBA60-E3-51 Bulk 1,000
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    • 1000 $0.78984
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    Vishay Semiconductors G2SBA60-E3-45

    BRIDGE RECT 1PHASE 600V 1.5A GBL
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    DigiKey G2SBA60-E3-45 Tube
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    Vishay Semiconductors G2SBA60-E3-51

    BRIDGE RECT 1PHASE 600V 1.5A GBL
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    Find more BA60 E price and stock on Findchips.com

    BA60 E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Weller Barrel Nut Assembly for Soldering Irons and Soldering Pencils Product Details Catalog No. UPC Code Fits Tool s Description Packaging Tech. Spec. Low Res. Image High Res. Image Stock Item BA60 037103473967 TC201/EC1201 Series, WTL24 Tip Retainer Assembly


    Original     		TC201/EC1201 WTL24 TC201T, TC201FE, EC1201A, EC1201AFE, PES50, PES51 PDF

    ba606

    Abstract: CY7C1069AV33 CY7C1069AV33-8ZXC ba60 CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-10ZI CY7C1069AV33-10ZXC CY7C1069AV33-10ZXI
    Text: CY7C1069AV33 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069AV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip by taking CE1 LOW and CE2 HIGH and Write Enable (WE) inputs LOW.


    Original     		CY7C1069AV33 CY7C1069AV33 d10-ns 48BGA pf/10 54-pin 48fBGA 48-Ball 60-Ball ba606 CY7C1069AV33-8ZXC ba60 CY7C1069AV33-10BAC CY7C1069AV33-10BAI CY7C1069AV33-10ZC CY7C1069AV33-10ZI CY7C1069AV33-10ZXC CY7C1069AV33-10ZXI PDF

    TC58FVM5B2A

    Abstract: TC58FVM5T2A tc58 flash
    Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3


    Original     		TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TC58FVM5T2A/B2A/T3A/B3 TC58FVM5B2A TC58FVM5T2A tc58 flash PDF

    ba60

    Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
    Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, ba60 TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5 PDF

    FUSE M8 250v G

    Abstract: BA100 diode cr6l-50 CR6L-350 FUSE FUJI AHX2915 blown fuse indicator with alarm BLC075-1 CS10F-100 CR2L-300
    Text: Low Voltage Fuses BLC, CR and CS types Super Rapid Fuses BLC, CR and CS types Super Rapid Fuses 150–1500 Volts AC 10–4700 Amps • Description The FUJI BLC, CR and CS types are extremely reliable fuses which have been specially developed to provide protection for silicon diodes and


    Original     		400A2 2L-260) FUSE M8 250v G BA100 diode cr6l-50 CR6L-350 FUSE FUJI AHX2915 blown fuse indicator with alarm BLC075-1 CS10F-100 CR2L-300 PDF

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor PDF

    TC58FVB321FT

    Abstract: 08FFF BA57 TSOPI48-P-1220-0 AAH35
    Text: TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT 4M x 8 BITS / 2M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT321/B321FT/XB-70 32-MBIT TC58FVT321/B321 432-bit, TC58FVB321FT 08FFF BA57 TSOPI48-P-1220-0 AAH35 PDF

    TFBGA56

    Abstract: No abstract text available
    Text: TC58FVT321/B321FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT 4M x 8 BITS / 2M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT321/B321FT/XB-70 32-MBIT TC58FVT321/B321 432-bit, TFBGA56 PDF

    BA41

    Abstract: TC58FVB321FT BA18 B321
    Text: TC58FVT321/B321FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT 4M x 8 BITS / 2M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT321/B321FT-10 32-MBIT TC58FVT321/B321 432-bit, BA41 TC58FVB321FT BA18 B321 PDF

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213 PDF

    k8a55

    Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
    Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8A56 256Mb 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh k8a55 BA251 samsung nor flash BA253 BA217 BA155 ba198 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8A3215ET 0A0000h-0A7FFFh 098000h-09FFFFh 090000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh PDF

    Flash Memory SAMSUNG k5

    Abstract: SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210
    Text: Preliminary MCP MEMORY K5A3x80YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		K5A3x80YT 4Mx8/2Mx16) 1Mx8/512Kx16) 69-Ball 08MAX Flash Memory SAMSUNG k5 SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210 PDF

    TC58FVM6B2ATG65

    Abstract: TC58FVM6T2ATG65 BA134 TC58FVM6B2A BA102 BA125 Diode TC58FVM6T2A TC58FVM6T2ATG-65
    Text: TC58FVM6T2ATG65/TC58FVM6B2ATG65 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash


    Original     		TC58FVM6T2ATG65/TC58FVM6B2ATG65 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA118 BA119 BA134 TC58FVM6B2ATG65 TC58FVM6T2ATG65 BA134 TC58FVM6B2A BA102 BA125 Diode TC58FVM6T2A TC58FVM6T2ATG-65 PDF

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112 PDF

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K8S3215ET B E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8S3215ET K8S3215EBE) 128words 000000h-00007Fh 0000h 44-Ball PDF

    BA102

    Abstract: BA127 Diode diode ba102 BA114
    Text: TC58FVT641/B641FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 BA102 BA127 Diode diode ba102 BA114 PDF

    ba4410

    Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
    Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification


    Original     		K5A3x41YT 2Mx16) 256Kx16) 66-Ball 80x11 08MAX ba4410 Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221 PDF

    SAMSUNG MCP

    Abstract: Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380
    Text: K5A3x80YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0


    Original     		K5A3x80YT 4Mx8/2Mx16) 1Mx8/512Kx16) 69-Ball 08MAX SAMSUNG MCP Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380 PDF

    BA60

    Abstract: rectifier s1wb Bridge diodes
    Text: Rectifier Diodes Low Noise Bridge Diodes Electrical Characteristics Absolute Maximum Ratings rm lo Conditions [V] [A] [°C] V Part No. If s m Tstg Tj [A] [°C] [°C] Ir tre eil eja ejc Conditions max (max) (max) (max) (max) If V r=Vrm [A] [mA] Vf (max) To


    OCR Scan     		LN1VB60 2SB60 4SB60 6SB60 S1YB20 S1ZB20 S1NB20 BA60 rectifier s1wb Bridge diodes PDF

    em 495 b12

    Abstract: RCA 4136
    Text: B12 I BNC Connectors, Adaptors, Assrts. MODEL DESCRIPTION 1-9 10-24 25-99 BNC Connectors & Adaptors - Useful Interfaces for Many Types of Coaxial Needs BAC10 L-com offers a broad range of BNC type coaxial connectors. Adequate inventories of all items listed are


    OCR Scan     		BAC10 BAC10A BAC260 BAC1501 BAC15Q3 BA120, BA220, BA230. BA1800K em 495 b12 RCA 4136 PDF

    D15LCA20

    Abstract: D10LCA20 D8LCA20 D8LDA20 diosc4m D5KD20 D5LCA20 diosd6m D6SB80 D10XB60
    Text: 11 8- - « m & £ PRSM Vr s m <kW V) 5É « m Vr Vi Io (V) (V) (V) (A) CC> (A) 1. 1. 0. 1. 0. 2 2 98 3 98 2. 5 2. 2. 2.5 2. 5 25c 25c 10 10 10 10 10 200 400 200 400 200 25c 25c trKIOOns trr<300ns ( t t - Y l V / ) . trr< 3 5 n s 2 & :f t y * - M * ( t h V n y )


    OCR Scan     		D5KC20R 300ns D5KC20RH 100ns D5KC40 D5KC10R D5KD20 D15LCA20 D10LCA20 D8LCA20 D8LDA20 diosc4m D5LCA20 diosd6m D6SB80 D10XB60 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 w ords by 32 bits dynam ic RAM m odule on w hich 2 pieces o f 16 M DRAM: /¿PD4218160 are assembled.


    OCR Scan     		MC-421000A32BA, 421000A32FA 32-BIT 421000A32FA PD4218160 M72B-50A46 PDF