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    BA221 Search Results

    BA221 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SIT8918BA-22-18N-24.000000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SIT8944BA-22-18NA64.000000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) Oscillator Datasheet
    SiT8918BA-22-18S-24.000000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SIT8918BA-22-18E-48.000000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SiT8924BA-22-18E-55.466670 SiTime 1 to 110 MHz, Wide Temperature AEC-Q100 Oscillator (-55 to +125°C) Datasheet
    SIT8918BA-22-18E-25.000000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SF Impression Pixel

    BA221 Price and Stock

    NXP Semiconductors UBA2211BT/N1,518

    IC CFL/TL DRIVER 42.68KHZ 14SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UBA2211BT/N1,518 Cut Tape 2,769 1
    • 1 $1.2
    • 10 $1.014
    • 100 $0.8508
    • 1000 $0.71427
    • 10000 $0.71427
    		Buy Now
    Rochester Electronics UBA2211BT/N1,518 112,500 1
    • 1 $1.06
    • 10 $1.06
    • 100 $0.998
    • 1000 $0.9024
    • 10000 $0.9024
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    Panasonic Electronic Components EEE-HBA221UAP

    CAP ALUM 220UF 20% 10V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EEE-HBA221UAP Cut Tape 988 1
    • 1 $0.78
    • 10 $0.544
    • 100 $0.3727
    • 1000 $0.31058
    • 10000 $0.31058
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    Mouser Electronics EEE-HBA221UAP 998
    • 1 $0.76
    • 10 $0.449
    • 100 $0.366
    • 1000 $0.256
    • 10000 $0.216
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    Master Electronics EEE-HBA221UAP
    • 1 -
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    • 1000 $0.2524
    • 10000 $0.22
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    SiTime Corporation SIT8918BA-22-18E-48.000000

    MEMS OSC XO 48.0000MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8918BA-22-18E-48.000000 55 1
    • 1 $4.72
    • 10 $4.483
    • 100 $3.8934
    • 1000 $3.18548
    • 10000 $2.94952
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    Schneider Electric QBA221252

    MOLDED CASE CIRCUIT BREAKER 240V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QBA221252 Box 1
    • 1 $600
    • 10 $600
    • 100 $600
    • 1000 $600
    • 10000 $600
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    Schneider Electric QBA221254

    MOLDED CASE CIRCUIT BREAKER 240V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QBA221254 Box 1
    • 1 $600
    • 10 $600
    • 100 $600
    • 1000 $600
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    Find more BA221 price and stock on Findchips.com

    BA221 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BA221 Philips Semiconductors High-Speed Diode Original PDF
    BA221 Philips Semiconductors General Purpose Diode Original PDF
    BA221 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA221 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA221 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA221 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA221 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA221 Unknown Cross Reference Datasheet Scan PDF
    BA221 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA221 Philips Semiconductors High-speed diode Scan PDF
    BA221 Texas Instruments Discrete Devices 1978 Scan PDF
    BA221T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BA221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAM246

    Abstract: BA221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA221 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package


    Original     		PDF M3D176 BA221 DO-35) BA221 MAM246 MAM246

    BA221

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA221 High-speed diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION


    Original     		PDF M3D176 BA221 DO-35) BA221 MAM246

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    C5V6 ph

    Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
    Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER


    Original     		PDF 1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA251

    Abstract: 16N10
    Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA221

    Abstract: IR 10D DIODE
    Text: Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)


    OCR Scan     		PDF BA221 DO-35) BA221 711Dfi2b ilDfl437 IR 10D DIODE

    BA221

    Abstract: ba221 d BB533
    Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature


    OCR Scan     		PDF Q02bim BA221 DO-35 DO-35 BA221 ba221 d BB533

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current


    OCR Scan     		PDF bb53c 00Ebl41 BA221 DO-35 bb53T31 QD2bl44

    BAV234

    Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317


    OCR Scan     		PDF BA220 BA221 BA316 BA317 BA318 BAV10 BAV18 BAV19 BAV20 BAV21 BAV234 BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914