3003-50
Abstract: No abstract text available
Text: Leuchtdioden – Light Emitting Diodes max. 26 max. 20 SINGLE-LED ∅ 10 BA 9s L 1 Chip DC + AC/DC Epoxy / Epoxy lens Kunststoff / spacer nm mcd + Anode DC Type M 1:1 Bestellcode Ordering-Code 6 6 DC DC 15 15 Rot/Red Gelb/Yellow 630 592 250 250 1 1 911M 02 0615 ER
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D 71055
Abstract: Si5441DC Si5441DC-T1
Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.055 @ VGS = -4.5 V 5.3 0.06 @ VGS = -3.6 V 5.1 0.083 @ VGS = -2.5 V 4.3 -20 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BA XX Lot Traceability
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Si5441DC
Si5441DC-T1
S-21251--Rev.
05-Aug-02
D 71055
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Untitled
Abstract: No abstract text available
Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX
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Si5441DC
S-62426--Rev.
04-Oct-99
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Untitled
Abstract: No abstract text available
Text: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BA Y DETAIL "B" AH Q AM BB Y BB Y BB Y MN BC BB Y W 20 19 AX Y DETAIL "C" 18 17
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CM75RX-34SA
Amperes/1700
120ylvania
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D 71055
Abstract: Si5441DC MAX 71055 71055
Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX
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Original
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Si5441DC
S-62426--Rev.
04-Oct-99
D 71055
MAX 71055
71055
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Untitled
Abstract: No abstract text available
Text: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BB BA Y DETAIL "B" AH Q AM Y BB BB Y AX Y DETAIL "C" W 20 19 18 17 16 15 AZ 12 11
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CM75RX-34SA
Amperes/1700
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Untitled
Abstract: No abstract text available
Text: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"
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CM75RX-34SA
Amperes/1700
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25C20
Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
Text: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
25C20
C541U
A65 SMD
BDP 281
od3 tube datasheet
PSB 21150 F pin
rd-58
S44 SMD
sei smd resistors
smd code aux n ba
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28 66 23 9
Abstract: No abstract text available
Text: Uninterruptible Power Supply Unitfor Universal Use QUINT-DC-UPS/24DC/20 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of
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QUINT-DC-UPS/24DC/20
28 66 23 9
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phoenix quint ups
Abstract: Uninterruptible power supply
Text: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/40 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of
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QUINT-DC-UPS/24DC/40
101997-00-gb
phoenix quint ups
Uninterruptible power supply
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a952
Abstract: Q62702-A952 6 ba diode EHA070
Text: BA 595 Silicon PIN Diode 2 • Current-controlled RF resistor 1 for RF attenuators • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners VPS05176 1 2 EHA07001 Type Marking Ordering Code Pin Configuration Package BA 595
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VPS05176
EHA07001
OD-323
Q62702-A952
Oct-04-1999
a952
Q62702-A952
6 ba diode
EHA070
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BB205
Abstract: BB105 BB209 BB109 Din 5461 BA111 BA121 BB204 BB205 g BB104
Text: Dioden Capacitance diodes Type Group Fig. Nr. Maximum ratings Characteristics Cd £/r = 3 V CD ( i / R = 3 V ) CD at V CD ( t / R = 25 V) CD (£/r = 30 V) PF ^R V 's at O ^R V BA 111 10 20 - - 4 5 -6 5 2 0.5 2 BA 121 10 30 - - 8 -1 2 2 0.9 2 50 10 30 -
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BA111
BA121
BB105
BB205
BB209
BB109
Din 5461
BA111
BA121
BB204
BB205 g
BB104
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Untitled
Abstract: No abstract text available
Text: TD TOSHIBA -CDISCRETE/OPTOD- D Ë J T C H 7 B 5 D GG 11,35 Y ö 9 0 97 25 0 T O S HI BA <DISCRETE/OPTO tfosìuba D7 I 3 3 - 3 g 90D 16357 TOSHIBA GTR MODULE SEMICONDUCTOR MG 20 O M 1FK 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.
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OCR Scan
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IC-200A)
ECA-MG200M1FK1-4
DT-33-35
clDc17a
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cc wok
Abstract: Rectifier Tubes Scans-0017343
Text: IK3 T U N B- SO L - V DIODE COATED 1.25 F ILA M E N T VOLTS 20 0 MA. AC OR DC ANY M OU N TI N G PO S ITIO N CONNECTORS SHOULD NOT EXE RT MORE THAN 7 POUNOS R A D I A L COMPRESSI ON AT ANY P OI N T AROUND THE CI RCUMF E R E NCE OF THE CAP. BOTTOM BA S I N G
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BA513
Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150
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BA511
1N4148
BA513
1N4448
BAS17
1N4150
701/iA
BA518
1N4151
BA519
iskra diode
BA523
BA521
DIODE BA531
BA521 diode
BA531
iskra
BA533
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iskra diode
Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA
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BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
iskra diode
BA531
Iskra by dioda
DIODE ISKRA
Iskra
BA-518
1N4153 silicon diodes
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ba682
Abstract: diode marking code 682 BA683 MAF100
Text: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking
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Q62702-A723
Q62702-A121
Q62702-A145
235b05
QQ1S733
ba682
diode marking code 682
BA683
MAF100
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MAF100
Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Text: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk
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-BA683
Q62702-A145
Q62702-A723
Q62702-A121
BA683
QQ1S733
BA682
MAF100
diode 682
diode marking code 682
BA 682
BA682
DIODE ba 683
BA diode
BA683
A723
682 diode
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diode ba110
Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V
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BA110
BB141
BB142.
diode ba110
BA142
BA 141 diode
BB142
ba112
BA 30 C
Diode BAY 45
S3 marking DIODE
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Untitled
Abstract: No abstract text available
Text: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35
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OD-123
OD-323
OT-23
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0515
Abstract: 1N484 BAV17 BAV18 BAV19 BAV20 BAV21 BA 30 C AA132
Text: Diodes General purpose diodes Type Fig. Nr. Maximum ratings Characteristics Py ^thJA t/p at 'F /R V mA ma h ^m b mW = at mA V °C/W 160 100 25 200) 50 25 10 38 < 120) <400 1.35 ( < 1.8) 10 55 {< <400 1.35 10 70 (< 1 AA 139 ') 1 130 55 150 20 £ 0 .7 5 100
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BAV19
BAV20
BAV21
1N484
0515
BAV17
BAV18
BA 30 C
AA132
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BA102 diode
Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Text: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï
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Tamb25Â
BA102
BA102 diode
BA102
diode ba102
diode ba 204
BB109G
BB205
BB113
BB 104
BB106
BB205A
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BA150
Abstract: No abstract text available
Text: FAGOR ^ BA 157 BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-IS Plastic -do •■ si s1 Voltage 400 to 1.000 V. C O eri s Current 1.0 A. at S0°C. 6 .3 5 to.a • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,
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BA282
Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
Text: SIEMENS BA 282 BA 283 Silicon RF Switching Diodes • For low-loss VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 282 yellow Q62702-A428 DO-35 DHD Q62702-A429 BA 283 ¿ - K] o FHA07001 Maximum Ratings
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Q62702-A428
FHA07001
DO-35
Q62702-A429
6E35bOS
E3Sb05
BA282
marking SA
BA diode
BA 282
diode ba 147
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