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    SI5441DC Price and Stock

    Vishay Siliconix SI5441DC-T1-E3

    MOSFET P-CH 20V 3.9A 1206-8
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    DigiKey SI5441DC-T1-E3 Reel
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    Vishay Siliconix SI5441DC-T1-GE3

    MOSFET P-CH 20V 3.9A 1206-8
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    Vishay Intertechnologies SI5441DC-T1-E3

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    Bristol Electronics SI5441DC-T1-E3 3,000
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    SI5441DC-T1-E3 1,900
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    Quest Components SI5441DC-T1-E3 2,400
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    Vishay Siliconix SI5441DC

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    Bristol Electronics SI5441DC 2,730 3
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    Quest Components SI5441DC 2,184
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    Vishay Siliconix SI5441DC-T1

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    Bristol Electronics SI5441DC-T1 2,730 3
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    Quest Components SI5441DC-T1 2,184
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    Find more SI5441DC price and stock on Findchips.com

    SI5441DC Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si5441DC Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI5441DC Vishay Siliconix MOSFETs Original PDF
    SI5441DC Vishay Telefunken P-channel 2.5-v (g-s) Mosfet Original PDF
    SI5441DC-DS Vishay Telefunken DS-Spice Model for Si5441DC Original PDF
    Si5441DC SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI5441DC-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI5441DC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.9A 1206-8 Original PDF
    Si5441DC-T1-E3 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI5441DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.9A 1206-8 Original PDF

    SI5441DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74055

    Abstract: transistor 74055 Si5441DC Si5441DC-T1 Si5441DC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5441BDC vs. Si5441DC Description: P-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5441BDC-T1-E3 Replaces Si5441DC-T1-E3 Si5441BDC-T1 Replaces Si5441DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5441BDC Si5441DC Si5441BDC-T1-E3 Si5441DC-T1-E3 Si5441BDC-T1 Si5441DC-T1 09-Nov-06 74055 transistor 74055

    71055

    Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free


    Original     		PDF Si5441DC Si5441DC-T1--E3 S-50366--Rev. 28-Feb-05 71055 MAX 71055 D 71055 Si5441DC-T1

    Si5441DC

    Abstract: Si5441DC-T1
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free


    Original     		PDF Si5441DC Si5441DC-T1--E3 18-Jul-08 Si5441DC-T1

    Si5441DC

    Abstract: a12s
    Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5441DC 07-Oct-99 a12s

    AN811

    Abstract: No abstract text available
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811

    Untitled

    Abstract: No abstract text available
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 11-Mar-11

    D 71055

    Abstract: Si5441DC Si5441DC-T1
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.055 @ VGS = -4.5 V 5.3 0.06 @ VGS = -3.6 V 5.1 0.083 @ VGS = -2.5 V 4.3 -20 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BA XX Lot Traceability


    Original     		PDF Si5441DC Si5441DC-T1 S-21251--Rev. 05-Aug-02 D 71055

    Untitled

    Abstract: No abstract text available
    Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX


    Original     		PDF Si5441DC S-62426--Rev. 04-Oct-99

    Si5441DC

    Abstract: a12s
    Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5441DC S-52525Rev. 12-Dec-05 a12s

    Untitled

    Abstract: No abstract text available
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5441DC

    Abstract: Si5441DC-T1 S5036
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free


    Original     		PDF Si5441DC Si5441DC-T1--E3 08-Apr-05 Si5441DC-T1 S5036

    D 71055

    Abstract: Si5441DC MAX 71055 71055
    Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX


    Original     		PDF Si5441DC S-62426--Rev. 04-Oct-99 D 71055 MAX 71055 71055

    Si5441DC

    Abstract: Si5441DC-T1-E3
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 18-Jul-08

    Si5441DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5441DC 18-Jul-08