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Vishay Siliconix SI5441DC-T1-E3 MOSFET P-CH 20V 3.9A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5441DC-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI5441DC-T1-GE3 MOSFET P-CH 20V 3.9A 1206-8
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DigiKey	SI5441DC-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI5441DC-T1-E3
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Bristol Electronics	SI5441DC-T1-E3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI5441DC-T1-E3		1,900			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI5441DC-T1-E3		2,400			1 $2.016 10 $2.016 100 $2.016 1000 $0.8316 10000 $0.756	Buy Now
Vishay Intertechnologies SI5441DC-T1 3900 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI5441DC-T1		979			1 $2.3 10 $2.3 100 $2.3 1000 $0.805 10000 $0.805	Buy Now

SI5441DC Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si5441DC		Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI5441DC		Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI5441DC		Vishay Siliconix	MOSFETs		Original	PDF
SI5441DC		Vishay Telefunken	P-channel 2.5-v (g-s) Mosfet		Original	PDF
SI5441DC-DS		Vishay Telefunken	DS-Spice Model for Si5441DC		Original	PDF
Si5441DC SPICE Device Model		Vishay	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI5441DC-T1		Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI5441DC-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.9A 1206-8		Original	PDF
Si5441DC-T1-E3		Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI5441DC-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.9A 1206-8		Original	PDF

SI5441DC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
74055 Abstract: transistor 74055 Si5441DC Si5441DC-T1 Si5441DC-T1-E3 Text: Specification Comparison Vishay Siliconix Si5441BDC vs. Si5441DC Description: P-Channel, 2.5 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5441BDC-T1-E3 Replaces Si5441DC-T1-E3 Si5441BDC-T1 Replaces Si5441DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si5441BDC Si5441DC Si5441BDC-T1-E3 Si5441DC-T1-E3 Si5441BDC-T1 Si5441DC-T1 09-Nov-06 74055 transistor 74055	PDF
71055 Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1 Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free	Original	Si5441DC Si5441DC-T1--E3 S-50366--Rev. 28-Feb-05 71055 MAX 71055 D 71055 Si5441DC-T1	PDF
Si5441DC Abstract: Si5441DC-T1 Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free	Original	Si5441DC Si5441DC-T1--E3 18-Jul-08 Si5441DC-T1	PDF
Si5441DC Abstract: a12s Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5441DC 07-Oct-99 a12s	PDF
AN811 Abstract: No abstract text available Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21	Original	Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811	PDF
Untitled Abstract: No abstract text available Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21	Original	Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 11-Mar-11	PDF
D 71055 Abstract: Si5441DC Si5441DC-T1 Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.055 @ VGS = -4.5 V 5.3 0.06 @ VGS = -3.6 V 5.1 0.083 @ VGS = -2.5 V 4.3 -20 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BA XX Lot Traceability	Original	Si5441DC Si5441DC-T1 S-21251--Rev. 05-Aug-02 D 71055	PDF
Untitled Abstract: No abstract text available Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX	Original	Si5441DC S-62426--Rev. 04-Oct-99	PDF
Si5441DC Abstract: a12s Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5441DC S-52525Rev. 12-Dec-05 a12s	PDF
Untitled Abstract: No abstract text available Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21	Original	Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si5441DC Abstract: Si5441DC-T1 S5036 Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free	Original	Si5441DC Si5441DC-T1--E3 08-Apr-05 Si5441DC-T1 S5036	PDF
D 71055 Abstract: Si5441DC MAX 71055 71055 Text: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX	Original	Si5441DC S-62426--Rev. 04-Oct-99 D 71055 MAX 71055 71055	PDF
Si5441DC Abstract: Si5441DC-T1-E3 Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21	Original	Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 18-Jul-08	PDF
Si5441DC Abstract: No abstract text available Text: SPICE Device Model Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5441DC 18-Jul-08	PDF