TO-22OAB
Abstract: No abstract text available
Text: NATL SEMI CONO DISC RET E HE D | bSD1130 003710^ 7 Proc. Famllj * CC tX IB "O e £ o H 3 P 1a? ffl 5 2 Z Z z z OC O ÛC DC w* P CM 3 S 2 £ ¿2 z z z z z w f z ST eg z P “ CO P “ CO P CO* ^ « a> <5 S S JB a> © z z z z z z z z U f». ¡2 ir —
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bSD1130
TO-22OAB
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lg crt tv
Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Text: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.
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bSD1130
003SST7
NB221
500mA
rec-50
SD113D
nb022ey
nb123ey
nb113ey
nb111ey
lg crt tv
NB212
NB211
NB222
NB112EY
NB111
NB022
NB022EY
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capacitor discharge ignition
Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003SS77
O-126
O-220
IO11F
NB022EY
NB123EY
NR001E
NB113EY
NB111EY
NB121EY
capacitor discharge ignition
NB313Y
"capacitor discharge ignition"
NA61W
NA62
Ignition Transformer
NB022EY
NB123EY
NB111
NB32
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NR421
Abstract: No abstract text available
Text: SAC D I bSD1130 ODBSbGi 4 NATL SEPIICON] {DISCRETE} 6 5 0 1 1 3 0 N A TL S E M I C O N D , Z 28C D I S C R E T E ) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features 1 | package and lead coding ■ 0.65pF typical feedback capacitance for excellent
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bSD1130
NR421
150mV
10tyW/M
280//V/M
10KHz:
15KHz
800KHz
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transistor MPSA13 NATIONAL
Abstract: MPSA13 MMBTA13 MPSW13
Text: NATL SEMICOND DISCRETE 11E D bSD1130 □ □ 3 7 2 b e] S | l~~27~Zc{ National Semiconductor U > mJ. 03 -o O —X u MPSA13 MPSW13 MMBTA13 3 I co TL/G /10100-5 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter
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b5D1130
T-27-29
MPSA13
MPSW13
MMBTA13
TUG/10100-1
226AE
TL/G/10100-5
TL/G/10100-4
transistor MPSA13 NATIONAL
MPSA13
MMBTA13
MPSW13
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MMBTA56
Abstract: MPSW56
Text: NATL SEMICOND DISCRETE H E D I bSD1130 DD37S71 3 I •o A > cn o> National Semiconductor T ' 2e?-^1 ■o to € CJ1 o> MPSA56 MPSW56 MMBTA56 § a> T U G /10100-S PNP General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherwise noted M in
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MPSW56
bSD1130
0D37S71
MMBTA56
226AE
TUG/10100-S
TL/G/10100-1
TUQ/10100-4
MMBTA56
MPSW56
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transistor pnp a111
Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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bSD113D
O-126
O-220
O-126
O-220
hSD113D
NB021EY
NB211YY
NR001E
NA41U
transistor pnp a111
NA41U
TO-126 ON
150 watt hf transistor 12 volt
PJO 390 CM
NA42
NA42U
NB021EY
NB211YY
NR001E
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TOKO A 50 GTE
Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■
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NR421
150mV
800KHz
100f/V/M
280JUV/M
10KHz:
-28dB
15KHz
TOKO A 50 GTE
88-108 rf amplifier
TO82 TRANSISTOR
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MMBT4121
Abstract: MMBT2904 MMBT3905 TO236 pn4122
Text: NATL SEMICOND DISCRETE 5SE ]> • bSD1130 0037777 2 ■ ~T~~2~7~0J PNP General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo(V) Min Min Min Max (mA/V) BCF29 BCF30 BCW61A 32 32 32 32 32 32 120 215 120 260 500 220 2/5.0 2/5.0 2/5.0 2N1132A
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bSD1130
BCF29
BCF30
BCW61A
2N1132A
2N2904
2N2905
2N2906
2N2907
2N3905
MMBT4121
MMBT2904
MMBT3905
TO236
pn4122
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MMBT2904
Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Text: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)
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T-29-OI
03714S
T-37-01
T-29-01
MMBT2904
MMBT2904A
MMBT3905
MMBT4916
MMBT3638A
MMBT3702
MMBT3703
MMBT4402
MMBT4403
MMBT5143
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FDLL456
Abstract: FDLL456A FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A 456 diode
Text: . Discrete POWER & Signal Technologies Semiconductor* 1N/FDLL 456/A - 1N/FDLL 459/A CO LOR B A N D M A R K IN G DEVICE LL-34 DO-35 1ST BAND 2ND B A N D FD LL4 5 6 F D L L4 5 6 A FD LL4 5 7 F D L L4 5 7 A FD LL4 5 8 F D L L4 5 8 A F D LL4 5 9 F D L L4 5 9 A
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456/A
459/A
DO-35
LL-34
FDLL456
FDLL456A
FDLL457A
FDLL458
FDLL458A
FDLL459
FDLL459A
456 diode
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NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP506A
NDP506B
NDB506A
NDB506B
125-C
bSD113D
0D4D21D
zener diode 4B3
NDB506B
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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diode 6t6
Abstract: NDC632P
Text: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDC632P
Supe202
diode 6t6
NDC632P
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MPSA06
Abstract: No abstract text available
Text: MPSA06 / MMBTA061 PZTA06 Discrete POWER & Sign al Technologies National Semiconductor “ PZTA06 MMBTA06 MPSA06 SOT-23 SOT-223 Mark: 16 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
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MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
bSD1130
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NDT410EL
Abstract: No abstract text available
Text: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT410EL
OT-223
004006b
NDT410EL
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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NPS8852H
b5D113Q
DIODE 3L2
Complementary MOSFET Half Bridge
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP506AL
NDP506BL
NDB506AL
NDB506BL
S01130
0GM0215
bSD1130
Zener diode DW
NDP506A
NDB506BL
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MMBTA56
Abstract: MPSA56 PZTA56
Text: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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PZTA56
OT-223
D0M0774
MMBTA56
MPSA56
PZTA56
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NDB7060
Abstract: NDP7060
Text: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.
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NDP7060/
NDB7060
bSD1130
bSD113D
NDP7060
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NDB4060L
Abstract: NDP4060L
Text: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using
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NDP4060L/
NDB4060L
b5G1130
00MD2MM
NDP4060L
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L50Q
Abstract: BCW65C
Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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BCW65C
LS01130
004D673
L50Q
BCW65C
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3.5b zener diode
Abstract: diode so3 NDB6050L NDP6050L
Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP6050L/
NDB6050L
ne8-59
00402bE
bSD1130
D0M02b3
3.5b zener diode
diode so3
NDB6050L
NDP6050L
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2N7000/2N7002/NDF7000A/NDS7002A
81-043-299-240B
bSD1130
N7000
2N7000 MOSFET
CJ NDF7000A
sfs sot23
Mosfet 2n7000
2N7000
2N7002
NDF7000A
NDS7002A
7002 transistor sm
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