BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
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BSZ520N15NS3
marking 6B
s4si
6B104
I6025
marking a6b
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diode s6 6d
Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
Text: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & , - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R , @? >2 H *&+ Z"
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IPP023N04N
IPB023N04N
diode s6 6d
MARKING 6B diode
b86g
s4si
marking EB diode
DIODE 4d gv
marking 6B
6H MARKING diode
marking a6b
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Untitled
Abstract: No abstract text available
Text: defining a degree of excellence RoHS6 Compliant Radial Leaded PTC 0ZRM Series 0ZRMD0708 Electrical Characteristic 23 o C 587B/:22F8 @&:3;B5;59FA Applications Line Voltage Power Supply, Transformer and Appliances Product Product Features Continuous Use at Voltages up to 120VAC/VDC
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0ZRMD0708
88F47
89ABC
120VAC/VDC
100mA
135VAC/DC
EN60738-1,
R50131685)
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
b72 voltage regulator
marking A93
A75 marking code
marking a86
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marking a86
Abstract: No abstract text available
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
marking a86
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B83 004
Abstract: marking a86 b72 voltage regulator
Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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MN18R162
MP18R162
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
B83 004
marking a86
b72 voltage regulator
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siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Text: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16xx30/HYR18xx20G
128Mb/
144Mb
600MHz
800MHz
128MB,
HYR16xx30G/HYR18xx20G
siemens a55
siemens A70
marking b28
siemens a57
siemens b38
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MARKING B83
Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Text: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16
3200G
600MHz
800MHz
128MB,
MARKING B83
A74 marking
diode u2 a90
marking A32
HYR163200G-653
HYR163200G-745
HYR163200G-840
HYR163200G-845
HYR183200G-653
HYR183200G-745
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thk 75
Abstract: No abstract text available
Text: 80 Trompeter general material/finish specifications TFS-1: Finish Specifications TFS-1A .0001- .0003 max thk Bright Nickel per QQ-N-290, Class1, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1
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QQ-N-290,
MIL-C-14550
AMS-2404C,
MIL-G-45204,
0001min
2404C
thk 75
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Untitled
Abstract: No abstract text available
Text: 91 Trompeter general material/finish specifications TFS-1: Finish Specifications TFS-1A .0001- .0003 max thk Bright Nickel per QQ-N-290, Class1, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1
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QQ-N-290,
MIL-C-14550
AMS-2404C,
MIL-G-45204,
0001min
2404C
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
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b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
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A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
A76 MARKING CODE
a77 package marking
a80 marking code
marking A32
marking A45
marking code B38
MR18R162WEG0-CM8
MARKING B17
MARKING CODE B82
marking a86
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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Untitled
Abstract: No abstract text available
Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828DR
128Mb
8Mx16)
16K/32ms
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transistor marking A21
Abstract: a74 marking code b37 diode
Text: Preliminary MR16R0828ER T 0 Change History Version 1.0 (July 2002) - Preliminary * First copy. * Based on the 1.0ver. 128Mb RDRAMs(D-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 Preliminary MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
transistor marking A21
a74 marking code
b37 diode
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MR16R0824BS0-CG6
Abstract: MR16R0828BS0-CG6
Text: Preliminary MR16R0824 8 BS0 Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mb RDRAMs(B-die) base RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)BS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb B-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0824
128/144Mb
8Mx16)
128Mb
16K/32ms
MR16R0824BS0-CG6
MR16R0828BS0-CG6
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288Mb
256/288Mb
600MHz
711MHz
800MHz
A23 851 diode
diode 910 b34
HYMR225616
HYMR26416
256MX16
H-745
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marking code 2fa
Abstract: No abstract text available
Text: NOTES: I. TH I R D MATERIALS AND ANGLE REV I S I O N S PROJ. REV FINISHES: RELEASE ZINC D I E C A S T PER A S T M B86, M A T T E TIN P L A T I N G . 0 0 0 1 0 0 T H I C K MIN. B R A S S P E R A S T M B I 6 , N I C K E L PL. 100 M I N . T H I C K O V E R C O P P E R S T R I K E
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Untitled
Abstract: No abstract text available
Text: T rompeter t f s - 1 : F i n i s h S p e c i f i c a t i o n s _ TFS-1A .0001 • .0003 max thk Bright Nickel per QQ-N-290, C la ssl, Form SB over .000080-.000150 thk Bright Copper per MIL-C-14550 (over) .0005 max Electroless Nickel per AMS-2404C, Class 1
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QQ-N-290,
MIL-C-14550
AMS-2404C,
MIL-G-45204,
MIL-C-1455Q
QQ-N-290.
2404C
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