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    Untitled

    Abstract: No abstract text available
    Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MD56V62800A 152-Word MD56V62800A cycles/64 b724B40

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.


    OCR Scan     		PDF MSM51V16100_ 216-Word MSM51V16100 216-w V16100 cycles/64m 7242MQ GD173Ã MSM51V16100

    sm 0038 tsop

    Abstract: sm 0038 sm 0038 PIN DIAGRAM D2720
    Text: O K I S em ic o n d u c to r M SC23T/D 2720A -X X BS9 2,097,152-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SOJ


    OCR Scan     		PDF MSC23T/D2720A-XXBS9 152-Word 72-Bit MSC23T/D2720A-xxBS9 16-Mb 168-pin 72-bit sm 0038 tsop sm 0038 sm 0038 PIN DIAGRAM D2720

    cq 0765

    Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
    Text: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is


    OCR Scan     		PDF KGF1638_ KGF1638 OT-89 33dBm) b724B40 KGF1638 242M0 cq 0765 CQ 419 MARKING E2B 0765 cq Ta 7210 p

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17100 216-Word 51V17100 216-w S4H40 2424D

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5205 ADPCM SPEEC H SYNTHESIS LSI TO CUSTOM ERS FOR NEW CIRCUIT DESIGN converter and includes a -40dB /oct low -pass filter. The sam pling frequency can also be selected u p to 32kHz. Therefore, theMSM6585 can realize a high quality voice.


    OCR Scan     		PDF MSM5205 -40dB 32kHz. theMSM6585 MSM6585 MSM5205 10-bit 12-bit

    511000

    Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
    Text: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The


    OCR Scan     		PDF b724240 MSM511000A_ 576-WORD MSM5110OOA MSM511000A 2424G 00157b5 --MSM511000AÂ QD127L 511000 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1V4170/SL 262,144-Word x 16-Bit D YN A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V4170/SL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM51V4170/SL is OKI's CMOS silicon gate process


    OCR Scan     		PDF 1V4170/SL 144-Word 16-Bit MSM51V4170/SL cycles/16ms,

    IC 741

    Abstract: photo sensor pin diagram PHOTO SENSORS PHOTO TRANSISTOR phototransistor t36
    Text: OKI electronic T36_ components Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package.


    OCR Scan     		PDF b7242 242M0 L724240 b72HBM0 IC 741 photo sensor pin diagram PHOTO SENSORS PHOTO TRANSISTOR phototransistor t36

    Funai

    Abstract: MSM65512 MSM65P512 DIP40-P-600 OKI DIP-40P GG13 addressing mode in core i7
    Text: SflE D • b?24240 0013Ô41 232 M O K I J O K I semiconductor— 0 k i s e m i c o n d u c t o r c r o u p MSM65512/65P512 _ -r-H9-i9-q>* OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65512 is a high-performance 8-bit single-chip controller that employs Oki's original nX-8/50


    OCR Scan     		PDF MSM65512/65P512 W9-19- MSM65512 nX-8/50 10MHz MSM65P512, MSM6SS12/65PS12 24EM0 Q013flb2 Funai MSM65P512 DIP40-P-600 OKI DIP-40P GG13 addressing mode in core i7

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE M ODE TYPE DESCRIPTION The M SM 5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 5117100 is OKI's CM OS silicon gate process technology.


    OCR Scan     		PDF MSM5117100 216-Word cycles/32m b72424

    BL-70

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14102 B/BL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUM N MODE TYPE DESCRIPTION The MSM514102B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102B/BL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 304-Word MSM514102B/BL cycles/128ms 102B/BL A0-A10 b72424Q 001604b BL-70

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51C464A 65,536-Word x 4-Bit D Y N A M IC R A M DESCRIPTION The MSM51C464A is a new generation dynam ic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The


    OCR Scan     		PDF MSM51C464A 536-Word MSM51C464A b72M240 00177Mb

    MSM514800

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514800/L 524,288-Word x 8-Bit D Y N A M IC RAM: FAST PAGE M O D E TYPE DESCRIPTION The MSM514800/L is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800/ L is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514800/L 288-Word MSM514800/L 288-word MSM514800/ 1024cycles/16ms, 1024cycles/128ms b724B40 MSM514800

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.


    OCR Scan     		PDF MSIW5110OOB/BL_ 576-Word MSM511000B/BL cycles/64ms b72424G 00177b2 MSM511000B/BL

    oki m6650

    Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
    Text: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the


    OCR Scan     		PDF MSM6650 MSM6650, MSM6376 12-bit MSM6650 00MHz, AR76-202 b724240 M6650 MSM27C101 oki m6650 m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC